CMA20E1600PB Thyristor VRRM = 1600 V I TAV = 20 A VT = 1,48 V Single Thyristor Part number CMA20E1600PB Backside: anode 4/2 1 3 Features / Advantages: Applications: Package: TO-220 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA20E1600PB Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1,46 V 1,88 V 1,48 V IT = 20 A IT = 40 A IT = 20 A IT = 40 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 115 °C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV I²t min. 2,02 V T VJ = 150 °C 20 A 31 A TVJ = 150 °C 0,92 V 28 mΩ 0,7 K/W K/W 0,50 TC = 25°C 170 W t = 10 ms; (50 Hz), sine TVJ = 45°C 180 A t = 8,3 ms; (60 Hz), sine VR = 0 V 195 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 155 A t = 8,3 ms; (60 Hz), sine VR = 0 V 165 A t = 10 ms; (50 Hz), sine TVJ = 45°C 160 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 120 A²s 115 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 9 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0,2 A/µs; 60 A IG = 20 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0,2 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0,5 W 150 A/µs 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1,3 TVJ = -40 °C 1,6 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 150°C 0,2 V 1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0,2 A; di G /dt = V 0,2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,5 A; di G /dt = 0,5 A/µs VR = 100 V; I T = 20 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA20E1600PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number 0,4 0,6 Nm 20 60 N Part description C M A 20 E 1600 PB XXXXXX Logo Assembly Line Lot # g = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Ordering Number CMA20E1600PB Similar Part CMA20E1600PZ Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) * on die level Delivery Mode Tube Quantity 50 Code No. 515181 Voltage class 1600 T VJ = 150 °C Thyristor V 0 max threshold voltage 0,92 R0 max slope resistance * 25 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Marking on Product CMA20E1600PB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA20E1600PB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 4/2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA20E1600PB Thyristor 160 60 1000 50 Hz, 80% VRRM VR = 0 V 140 40 120 IT [A] 2 It TVJ = 45°C ITSM TVJ = 45°C 100 2 100 [A s] TVJ = 125°C [A] 20 125°C 150°C TVJ = 125°C 80 TVJ = 25°C 0 0,5 60 1,0 1,5 2,0 10 0,01 2,5 0,1 VT [V] Fig. 1 Forward characteristics 4 1 1 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 1000 IGD: TVJ = 125°C 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 C B VG IGD: TVJ = 25°C 2 [V] 1 IGD: TVJ = 0°C B IGD: TVJ = -40°C B 3 30 100 typ. tgd IT(AV)M Limit 20 [µs] [A] 10 TVJ = 125°C 10 IGD: TVJ = 25°C A 1 10 0 0 25 50 75 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [°C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 P(AV) 0,6 ZthJC 0,4 20 Rthi [K/W] [K/W] [W] 0,2 10 0 0 10 20 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [°C] © 2015 IXYS all rights reserved 10 2 10 0.01 0.0011 0.18 0.17 0.025 0.32 0.17 0.09 3 10 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 ti [s] 0.1 0.08 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b