CLA5E1200PZ

CLA5E1200PZ
High Efficiency Thyristor
VRRM
=
1200 V
I TAV
=
5A
VT
=
1,31 V
Single Thyristor
Part number
CLA5E1200PZ
Backside: anode
4
1
3
Features / Advantages:
Applications:
Package: TO-263 (D2Pak-HV)
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● High creepage distance
between terminals
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA5E1200PZ
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
I R/D
reverse current, drain current
VT
forward voltage drop
TVJ = 25°C
10
µA
1
mA
IT =
5A
TVJ = 25°C
1,33
V
IT =
10 A
1,62
V
IT =
5A
1,31
V
IT =
10 A
I T(RMS)
RMS forward current
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
TVJ = 125 °C
for power loss calculation only
thermal resistance case to heatsink
total power dissipation
I TSM
max. forward surge current
value for fusing
V
TVJ = 125°C
TC = 135 °C
RthCH
max. Unit
1300
V
VR/D = 1200 V
average forward current
Ptot
typ.
VR/D = 1200 V
I TAV
I²t
min.
1,72
V
T VJ = 150 °C
5
A
7,8
A
TVJ = 150 °C
0,89
V
85
mΩ
1,5 K/W
K/W
0,25
TC = 25°C
85
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
70
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
76
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
60
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
64
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
25
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
24
A²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
18
A²s
17
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 150 °C
µs
tP =
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C; f = 50 Hz
repetitive, IT =
t P = 200 µs; di G /dt = 0,1 A/µs;
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
I GT
gate trigger current
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
IG =
2
0,1 A; V = ⅔ VDRM
non-repet., I T =
10 A
pF
5
W
2,5
W
0,25
W
150 A/µs
5A
500 A/µs
TVJ = 150°C
500 V/µs
VD = 6 V
TVJ = 25 °C
1,8
TVJ = -40 °C
1,9
V
VD = 6 V
TVJ = 25 °C
30
mA
TVJ = -40 °C
50
mA
TVJ = 150°C
0,2
V
1
mA
TVJ = 25 °C
45
mA
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM
tp =
10 µs
IG =
0,1 A; di G /dt =
V
0,1 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
30
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0,1 A; di G /dt =
VR = 100 V; I T =
0,1 A/µs
5 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
150
µs
20 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA5E1200PZ
Package
Ratings
TO-263 (D2Pak-HV)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
max.
20
Unit
A
-40
150
°C
-40
125
°C
150
°C
1,5
Weight
FC
20
mounting force with clip
d Spp/App
typ.
Product Marking
C
L
A
5
E
1200
PZ
IXYS Zyyww
Logo
Assembly Line
Date Code
N
4,2
mm
terminal to backside
4,7
mm
Part description
XXXXXXXXX
Part No.
60
terminal to terminal
creepage distance on surface | striking distance through air
d Spb/Apb
g
=
=
=
=
=
=
=
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Current Rating [A]
Single Thyristor
Reverse Voltage [V]
TO-263AB (D2Pak) (2HV)
000000
Assembly Code
Ordering
Standard
Ordering Number
CLA5E1200PZ
Similar Part
CLA5E1200UC
Equivalent Circuits for Simulation
I
V0
R0
Package
TO-252AA (DPak)
* on die level
Delivery Mode
Tape & Reel
Quantity
800
Code No.
516482
Voltage class
1200
T VJ = 150 °C
Thyristor
V 0 max
threshold voltage
0,89
R0 max
slope resistance *
82
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Marking on Product
CLA5E1200PZ
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA5E1200PZ
Outlines TO-263 (D2Pak-HV)
Dim.
W
Supplier
Option
D1
L1
c2
A1
H
D
E
A
1
4
3
L
e1
D2
A2
c
2x e
2x b2
10.92
(0.430)
E1
W
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.091
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.05
(0.120)
3.81
(0.150)
9.02
(0.355)
mm (Inches)
2x b
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.3
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
2.54 (0.100)
Recommended min. foot print
4
1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CLA5E1200PZ
Thyristor
20
100
100
VR = 0 V
50 Hz, 80% VRRM
TVJ = 150°C
TVJ = 125°C
15
IT
ITSM
10
50
[A]
TVJ = 45°C
2
It
10
TVJ = 45°C
[A]
TVJ = 125°C
[A2s]
TVJ = 125°C
5
0
0,0
TVJ = 25°C
0,5
1,0
1,5
2,0
0
2,5
1
3,0
0,01
0,1
VT [V]
1
1
2
t [s]
t [ms]
Fig. 3 I t versus time (1-10 s)
1000
10
4 5 6 7 8 910
2
Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 1 Forward characteristics
3
25
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
TVJ = 125°C
100
23
VG
IT(AV)M
15
tgd
1
5 6
1
[V]
[A]
10
[µs]
10
4
4: PGAV = 0.25 W
5
5: PGM = 2.5 W
6: PGM =
5W
lim.
10
100
1000
typ.
1
10
0,1
1
10000
0
100
1000
0
40
IG [mA]
IG [mA]
Fig. 4 Gate voltage & gate current
80
120
160
Tcase [°C]
Fig. 5 Gate controlled delay time tgd
10
Fig. 6 Max. forward current at
case temperature
1,6
dc =
1
0.5
0.4
0.33
0.17
0.08
8
P(AV)
6
[W]
dc =
1
0.5
0.4
0.33
0.17
0.08
20
1,2
ZthJC
0,8
RthHA
1.0
2.0
4.0
8.0
12.0
16.0
4
2
i Rthi (K/W)
1
0.120
2
0.110
3
0.500
4
0.180
5
0.590
[K/W]
0,4
0
ti (s)
0.0100
0.0001
0.0025
0.0550
0.0250
0,0
0
2
4
6
IT(AV) [A]
0
50
100
150
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b