CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1,27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h CLA50E1200HB Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25°C 50 µA TVJ = 125°C 4 mA IT = TVJ = 25°C 1,32 V 1,60 V 1,27 V IT = 50 A TVJ = 125 °C 50 A I T = 100 A I TAV average forward current TC = 125 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 100 A Ptot max. Unit 1300 V 1,65 V T VJ = 150 °C 50 A 79 A TVJ = 150 °C 0,88 V 7,7 mΩ 0,25 K/W K/W 0,25 TC = 25°C 500 W t = 10 ms; (50 Hz), sine TVJ = 45°C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 555 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2,12 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2,04 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1,54 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 1,48 kA²s 25 t P = 300 µs pF 10 W 5 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A t P = 200 µs; di G /dt = 0,3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1,5 TVJ = -40 °C 1,6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 50 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 150°C 0,2 V I GD gate non-trigger current 3 mA IL latching current TVJ = 25 °C 125 mA IG = 0,3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 50 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0,3 A; di G /dt = V 0,3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,3 A; di G /dt = 0,3 A/µs VR = 100 V; I T = 50 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 200 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h CLA50E1200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0,8 1,2 Nm 20 120 N Part description C L A 50 E 1200 HB IXYS Logo g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Assembly Line Zyyww abcd Assembly Code Date Code Ordering Standard Ordering Number CLA50E1200HB Similar Part CLA50E1200TC Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA50E1200HB Package TO-268AA (D3Pak) (2) * on die level Delivery Mode Tube Code No. 503748 Voltage class 1200 T VJ = 150 °C Thyristor V 0 max threshold voltage 0,88 V R0 max slope resistance * 5,2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h CLA50E1200HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h CLA50E1200HB Thyristor 150 600 120 500 90 400 IT TVJ = 45°C 2 TVJ = 45°C 1000 TVJ = 125°C 300 [A] VR = 0 V It ITSM 60 10000 50 Hz, 80% VRRM [A2s] TVJ = 125°C [A] TVJ = 125°C 30 200 TVJ = 25°C 0 0,0 100 0,5 1,0 1,5 2,0 100 2,5 0,01 0,1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150°C 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 6 4 5 60 TVJ = 125°C 100 23 1 dc = 1 0.5 0.4 0.33 0.17 0.08 50 tgd IT(AV)M [µs] [A] 40 1 [V] 10 lim. 100 1000 10000 10 typ. 1 10 0,1 10 30 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 1 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd 100 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,3 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 dc = 1 0.5 0.4 0.33 0.17 0.08 80 P(AV) 60 [W] 0,2 ZthJC 0,1 i Rthi (K/W) 1 0.075 2 0.17 3 0.057 4 0.158 5 0.0105 [K/W] 40 0,0 20 ti (s) 0.0011 0.0019 0.0115 0.12 0.5 0 0 20 40 60 IT(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 0,001 0,01 0,1 1 10 t [s] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827h