CLA100E1200KB High Efficiency Thyristor VRRM = 1200 V I TAV = 100 A VT = 1,34 V Single Thyristor Part number CLA100E1200KB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-264 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA100E1200KB Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25°C 50 µA TVJ = 125°C 5 mA I T = 100 A TVJ = 25°C 1,37 V 1,78 V 1,34 V TVJ = 125 °C I T = 100 A I T = 200 A I TAV average forward current TC = 105 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 200 A Ptot max. Unit 1300 V 1,85 V T VJ = 150 °C 100 A 160 A TVJ = 150 °C 0,82 V 5,2 mΩ 0,2 K/W 0,15 K/W TC = 25°C 220 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1,10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1,19 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1,01 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6,05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 5,89 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4,37 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 4,25 kA²s 86 t P = 300 µs pF 10 W 1 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 300 A t P = 200 µs; di G /dt = 0,45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1,5 TVJ = -40 °C 1,6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 40 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 150°C 0,2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA I G = 0,45 A; V = ⅔ VDRM 150 A/µs non-repet., I T = 100 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs V IG = 0,45 A; di G /dt = 0,45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,5 A; di G /dt = 0,5 A/µs VR = 100 V; I T = 100 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA100E1200KB Package Ratings TO-264 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 10 Weight MD mounting torque FC mounting force with clip g 0,8 1,2 Nm 20 120 N Part description C L A 100 E 1200 KB IXYS Logo Part No. XXXXXXXXX Assembly Line Zyyww = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-264 (3) abcd Assembly Line Date Code Ordering Standard Ordering Number CLA100E1200KB Similar Part CLA100E1200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA100E1200KB Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 514750 Voltage class 1200 T VJ = 150 °C Thyristor V 0 max threshold voltage 0,82 V R0 max slope resistance * 2,7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA100E1200KB Outlines TO-264 A E A2 S SYM Q R ØT A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Q1 D R1 1 2 3 L1 L b b1 c A1 b2 e Back side Rückseite 4 INCHES MILLIMETERS MIN MAX 0.190 0.202 0.100 0.114 0.079 0.083 0.044 0.056 0.094 0.106 0.114 0.122 0.021 0.033 1.020 1.030 0.780 0.786 5.46 BSC MIN MAX 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 .215 BSC 0.000 0.000 0.800 0.090 0.125 0.239 0.330 0.150 0.070 0.238 0.062 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 0.010 0.010 0.820 0.102 0.144 0.247 0.342 0.170 0.090 0.248 0.072 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 ØP 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA100E1200KB Thyristor 150 1000 10000 50 Hz, 80% VRRM VR = 0 V 900 100 800 TVJ = 45°C ITSM IT 2 It TVJ = 45°C 700 [A] [A] 50 2 [A s] 600 125°C 150°C TVJ = 125°C TVJ = 125°C 500 TVJ = 25°C 0 0,5 400 1,0 1000 1,5 0,01 0,1 1 1 4 5 6 7 8 910 t [ms] 1000 120 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 2 3 Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current 1: IGD, TVJ = 150°C VG 2 t [s] VT [V] Fig. 1 Forward characteristics 10 1 dc = 1 0.5 0.4 0.33 0.17 0.08 100 100 3 80 typ. tgd IT(AV)M Limit 60 1 6 [V] 4 [µs] 5 [A] 10 40 TVJ = 125°C 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0,1 1 10 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 50 75 100 125 150 175 TC [°C] Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 0,24 dc = 1 0.5 0.4 0.33 0.17 0.08 200 160 P(AV) 120 0,20 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 [W] 0,16 ZthJC 0,12 [K/W] 80 i Rthi (K/W) 1 0.032 2 0.018 3 0.21 4 0.034 5 0.095 0,08 40 0,04 0 ti (s) 0.011 0.0001 0.02 0.35 0.14 0,00 0 25 50 75 100 125 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2015 IXYS all rights reserved 10 100 1000 10000 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b