CMA50E1600HB

CMA50E1600HB
Thyristor
VRRM
=
1600 V
I TAV
=
50 A
VT
=
1,31 V
Single Thyristor
Part number
CMA50E1600HB
Backside: anode
2
1
3
Features / Advantages:
Applications:
Package: TO-247
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● High creepage distance
between terminals
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CMA50E1600HB
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1600
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
VR/D = 1600 V
TVJ = 25°C
50
µA
TVJ = 125°C
5
mA
IT =
TVJ = 25°C
1,30
V
1,66
V
1,31
V
IT =
50 A
TVJ = 125 °C
50 A
I T = 100 A
I TAV
average forward current
TC = 110 °C
I T(RMS)
RMS forward current
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
RthCH
thermal resistance case to heatsink
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
V
VR/D = 1600 V
I T = 100 A
Ptot
max. Unit
1700
V
1,77
V
T VJ = 150 °C
50
A
79
A
TVJ = 150 °C
0,83
V
9,6
mΩ
0,4 K/W
K/W
0,25
TC = 25°C
310
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
550
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
595
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
470
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
505
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1,52 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1,48 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
1,11 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 150 °C
1,06 kA²s
26
t P = 300 µs
pF
10
W
5
W
0,5
W
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 150 A
t P = 200 µs; di G /dt = 0,3 A/µs;
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C
1,5
TVJ = -40 °C
1,6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
50
mA
TVJ = -40 °C
80
mA
VGD
gate non-trigger voltage
TVJ = 140°C
0,2
V
I GD
gate non-trigger current
5
mA
IL
latching current
TVJ = 25 °C
125
mA
IG =
0,3 A; V = ⅔ VDRM
non-repet., I T =
150 A/µs
50 A
500 A/µs
1000 V/µs
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM
tp =
10 µs
IG =
0,3 A; di G /dt =
V
0,3 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
100
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0,3 A; di G /dt =
0,3 A/µs
VR = 100 V; I T = 50 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
150
µs
20 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CMA50E1600HB
Package
Ratings
TO-247
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
70
Unit
A
-40
150
°C
-40
125
°C
150
°C
6
Weight
MD
mounting torque
FC
mounting force with clip
Product Marking
0,8
1,2
Nm
20
120
N
Part description
C
M
A
50
E
1600
HB
IXYS
Logo
g
=
=
=
=
=
=
=
Thyristor (SCR)
Thyristor
(up to 1800V)
Current Rating [A]
Single Thyristor
Reverse Voltage [V]
TO-247AD (3)
XXXXXXXXX
Part No.
Assembly Line
Zyyww
abcd
Assembly Code
Date Code
Ordering
Standard
Ordering Number
CMA50E1600HB
Equivalent Circuits for Simulation
I
V0
R0
* on die level
Delivery Mode
Tube
Quantity
30
Code No.
513974
T VJ = 150 °C
Thyristor
V 0 max
threshold voltage
0,83
R0 max
slope resistance *
7
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Marking on Product
CMA50E1600HB
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CMA50E1600HB
Outlines TO-247
A
E
A2
Ø P1
ØP
D2
S
Q
D1
D
2x E2
4
1
2
3
L1
E1
L
2x b2
3x b
b4
C
A1
2x e
2
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CMA50E1600HB
Thyristor
100
500
10000
50 Hz, 80% VRRM
VR = 0 V
TVJ = 125°C
80
150°C
400
IT 60
ITSM
[A] 40
2
It
TVJ = 45°C
TVJ = 45°C
1000
[A]
[A2s]
300
TVJ = 125°C
TVJ = 125°C
20
TVJ = 25°C
0
0,0
0,5
1,0
200
1,5
100
2,0
0,01
0,1
VT [V]
4 5 6 7 8 910
Fig. 3 I t versus time (1-10 s)
80
dc =
1
0.5
0.4
0.33
0.17
0.08
70
5
6
4
1
3
t [ms]
1000
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
2
2
2
Fig. 2 Surge overload current
ITSM: crest value, t: duration
1: IGD, TVJ = 150°C
VG
1
t [s]
Fig. 1 Forward characteristics
10
1
3
60
TVJ = 125°C
100
50
tgd
IT(AV)M
[µs]
[A]
1
40
[V]
10
30
20
4: PGAV = 0.5 W
lim.
5: PGM = 5 W
6: PGM = 10 W
0,1
1
10
100
1000
1
10
10000
60
0
50
100
150
Tcase [°C]
Fig. 5 Gate controlled delay time tgd
Fig. 6 Max. forward current at
case temperature
0,5
dc =
1
0.5
0.4
0.33
0.17
0.08
80
1000
IG [mA]
Fig. 4 Gate voltage & gate current
P(AV)
0
100
IG [mA]
100
10
typ.
RthHA
0.4
0.6
0.8
1.0
2.0
4.0
[W]
0,4
0,3
ZthJC
40
i Rthi (K/W)
1
0.044
2
0.039
3
0.047
4
0.09
5
0.18
0,2
[K/W]
20
0,1
0
ti (s)
0.011
0.0001
0.02
0.4
0.12
0,0
0
20
40
60
IT(AV) [A]
0
50
100
150
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b