DSP25-12AT Standard Rectifier VRRM = 2x 1200 V I FAV = 25 A VF = 1.16 V Phase leg Part number DSP25-12AT Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a DSP25-12AT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 1200 V TVJ = 25°C 40 µA VR = 1200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.23 V 1.47 V 1.16 V IF = forward voltage drop min. 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 150 °C TC = 135°C 1.50 V T VJ = 175 °C 25 A TVJ = 175 °C 0.81 V 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 13.8 mΩ 0.9 K/W K/W 0.15 TC = 25°C 160 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 A²s TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20121218a DSP25-12AT Package Ratings TO-268AA (D3Pak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 °C -40 175 °C Weight 5 FC 20 mounting force with clip g 120 N Product Marking IXYS Logo Part No. YYWW Z Date Code abcd Assembly Code Assembly Line Ordering Standard Part Number DSP25-12AT Similar Part DSP25-12A DSP25-16AT DSP25-16A DSP25-16AR Equivalent Circuits for Simulation I V0 R0 Marking on Product DSP25-12AT Package TO-247AD (3) TO-268AA (D3Pak) (2) TO-247AD (3) ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 403089 Voltage class 1200 1600 1600 1600 T VJ = 175°C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 11.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a DSP25-12AT Outlines TO-268AA (D3Pak) Dim. A A1 A2 b b2 C C2 D D1 E E1 e H L L1 L2 L3 L4 1 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 2/4 Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.100 0.045 0.057 0.075 0.083 0.016 0.026 0.057 0.063 0.543 0.551 0.488 0.500 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.094 0.106 0.047 0.055 0.039 0.045 0.100 BSC 0.150 0.161 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a DSP25-12AT Rectifier 60 300 10 3 50 Hz, 80% VRRM VR = 0 V 50 TVJ = 45°C IFSM 40 IF 2 It TVJ = 45°C 30 [A2s] [A] [A] TVJ = 150°C 10 2 200 20 TVJ = 150°C TVJ = 125°C 10 TVJ = 25°C 0 0.5 1.0 100 0.001 1.5 10 1 0.01 0.1 1 1 2 3 4 5 6 7 8 91 0 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 40 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 30 Ptot DC = 1 0.5 0.4 0.33 0.17 0.08 20 [W] 10 2 80 DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 [A] 20 0 0 0 5 10 15 20 25 30 0 IF(AV)M [A] 50 100 150 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation vs. direct output current and ambient temperature 1.0 0.8 ZthJ Constants for ZthJC calculation: 0.6 [K/W] i Rthi (K/W) 0.4 1 0.03 0.0004 2 0.08 0.002 3 0.2 0.003 4 0.39 0.03 5 0.2 0.29 0.2 0.0 1 10 100 1000 ti (s) 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20121218a