DNA30EM2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PZ Backside: anode 1 3 4 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a DNA30EM2200PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 2300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 2200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.53 V 1.24 V 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.63 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V d = 0.5 for power loss calculation only Ptot typ. VR = 2200 V IF = forward voltage drop min. 13.4 mΩ 0.7 K/W K/W 0.25 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20130325a DNA30EM2200PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 35 Unit A -55 175 °C -55 150 °C Tstg storage temperature -55 150 °C Weight FC 1.5 20 mounting force with clip d Spp/App d Spb/Apb typ. D N A 30 EM 2200 PZ IXYS Zyyww Logo N 4.2 mm terminal to backside 4.7 mm Part number XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air Product Marking g Assembly Line = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Date Code Assembly Code Ordering Standard Part Number DNA30EM2200PZ Similar Part DNA30E2200PZ DNA30E2200PA DNA30E2200FE DNA30E2200IY Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA30EM2200PZ Package TO-263AB (D2Pak) (2HV) TO-220AC i4-Pac (2HV) TO-262 (I2Pak) (2HV) * on die level Delivery Mode Tape & Reel Code No. 514467 Voltage class 2200 2200 2200 2200 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a DNA30EM2200PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 3 4 A2 L e1 D2 1 c 2x e 2x b2 10.92 (0.430) W E1 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 2.41 0.095 0.51 0.99 0.020 0.039 1.14 1.40 0.045 0.055 0.40 0.74 0.016 0.029 1.14 1.40 0.045 0.055 8.38 9.40 0.330 0.370 8.00 8.89 0.315 0.350 2.3 0.091 9.65 10.41 0.380 0.410 6.22 8.50 0.245 0.335 2,54 BSC 0,100 BSC 4.28 0.169 14.61 15.88 0.575 0.625 1.78 2.79 0.070 0.110 1.02 1.68 0.040 0.066 typ. typ. 0.040 0.002 0.02 0.0008 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a DNA30EM2200PZ Rectifier 60 103 300 VR = 0 V TVJ = 45°C 40 250 IF IFSM [A] [A] 20 TVJ = 45°C 2 It 2 200 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 [A s] TVJ = 150°C TVJ = 150°C 50 Hz, 80% VRRM 1.5 2.0 102 150 0.001 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 40 50 RthKA = 40 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 30 dc = 1 0.5 0.4 0.33 0.17 0.08 IF(AV)M 20 [A] 20 [W] 10 10 0 0 0 10 20 30 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: ZthJC i Rthi (K/W) 1 0.03 0.4 [K/W] 0.2 ti (s) 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a