DMA30E1800HA Standard Rectifier VRRM = 1800 V I FAV = 30 A VF = 1.22 V Single Diode Part number DMA30E1800HA Backside: anode 1 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123b DMA30E1800HA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 1800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.25 V 1.50 V 1.22 V 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.59 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V d = 0.5 for power loss calculation only Ptot typ. VR = 1800 V IF = forward voltage drop min. 12.8 mΩ 0.7 K/W K/W 0.25 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130123b DMA30E1800HA Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 °C -55 175 °C Weight 6 MD mounting torque FC mounting force with clip Product Marking Logo Part Number DateCode Assembly Code g 0.8 1.2 Nm 20 120 N Part number D M A 30 E 1800 HA abcdef = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) YYWWZ 000000 Assembly Line Ordering Standard Part Number DMA30E1800HA Equivalent Circuits for Simulation I V0 R0 Marking on Product DMA30E1800HA * on die level Delivery Mode Tube Code No. 455156 T VJ = 175°C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123b DMA30E1800HA Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123b DMA30E1800HA Rectifier 60 103 300 VR = 0 V 50 Hz, 80% VRRM 40 250 IF IFSM [A] [A] 20 TVJ = 45°C 2 It TVJ = 45°C 2 TVJ = 150°C [A s] 200 TVJ = 150°C TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 102 150 0.001 1.5 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 80 50 dc = 1 0.5 0.4 0.33 0.17 0.08 RthKA = 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 40 30 Ptot 70 60 50 IF(AV)M 40 [A] 20 30 [W] 20 10 10 0 0 0 5 10 15 20 25 30 35 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 Tamb [°C] TC [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: ZthJC i 0.4 [K/W] 0.2 Rthi (K/W) ti (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123b