DNA30ER2200IY High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30ER2200IY Backside: anode 3 1 Features / Advantages: Applications: Package: TO-262 (I2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123a DNA30ER2200IY Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 2300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 2200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.53 V 1.24 V 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.63 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V d = 0.5 for power loss calculation only Ptot typ. VR = 2200 V IF = forward voltage drop min. 13.4 mΩ 0.7 K/W K/W 0.50 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 665 A²s TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20130123a DNA30ER2200IY Package Ratings TO-262 (I2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 35 Unit A -55 175 °C -55 150 °C Tstg storage temperature -55 150 °C Weight FC 1.5 20 mounting force with clip d Spp/App d Spb/Apb typ. D N A 30 ER 2200 IY Part No. Date Code Assembly Code N 4.2 mm terminal to backside 4.9 mm Part number IXYS Logo 60 terminal to terminal creepage distance on surface | striking distance through air Product Marking g = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Single Diode Reverse Voltage [V] TO-262 (I2Pak) (2HV) YYWW Z abcd Assembly Line Ordering Standard Part Number DNA30ER2200IY Similar Part DNA30E2200PA DNA30E2200PC DNA30EM2200PC DNA30E2200FE Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA30ER2200IY Package TO-220AC (2) TO-263AB (D2Pak) (2) TO-263AB (D2Pak) (2) i4-Pac (2HV) * on die level Delivery Mode Tube Code No. 513702 Voltage class 2200 2200 2200 2200 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123a DNA30ER2200IY c2 D E Supplier Option A A A2 b b2 c c2 D D1 D2 E E1 e e1 L L1 L2 4 3 L e1 A2 D2 L1 1 Dim. D1 L2 Outlines TO-262 (I2Pak) c 2x b2 2x b E1 2x e Millimeter min max 4.06 4.83 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 13.00 13.60 2.90 3.10 1.02 1.68 Inches min max 0.160 0.190 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.512 0.535 0.114 0.122 0.040 0.066 All dimensions conform with and/or within JEDEC standard. 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20130123a DNA30ER2200IY Rectifier 60 103 300 VR = 0 V TVJ = 45°C 40 250 IF IFSM [A] [A] 20 TVJ = 45°C 2 It 2 200 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 [A s] TVJ = 150°C TVJ = 150°C 50 Hz, 80% VRRM 1.5 2.0 102 150 0.001 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 40 50 RthKA = 40 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 30 dc = 1 0.5 0.4 0.33 0.17 0.08 IF(AV)M 20 [A] 20 [W] 10 10 0 0 0 10 20 30 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: ZthJC i 0.4 [K/W] 0.2 Rthi (K/W) ti (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123a