DAA10P1800PZ Avalanche Rectifier VRRM = 2x 1800 V I FAV = 10 A VF = 1.21 V Phase leg Part number DAA10P1800PZ Backside: anode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Avalanche rated ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131114a DAA10P1800PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 1800 V TVJ = 25°C 10 µA TVJ = 150°C 0.7 mA TVJ = 25°C 1.26 V 1.53 V 1.21 V 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t value for fusing 1.57 V T VJ = 175 °C 10 A TVJ = 175 °C 0.82 V d = 0.5 for power loss calculation only Ptot mΩ K/W K/W 0.25 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 150 A t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 130 A t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A t = 10 ms; (50 Hz), sine TVJ = 45°C 115 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 105 A²s 85 A²s 82 A²s TVJ = 150 °C t = 8,3 ms; (60 Hz), sine VR = 0 V junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C PRSM max. surge reverse dissipation t p = 10 µs TVJ = 175 °C © 2013 IXYS all rights reserved 37 1.5 TC = 25°C CJ IXYS reserves the right to change limits, conditions and dimensions. typ. VR = 1800 V IF = forward voltage drop min. Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 1.6 kW 20131114a DAA10P1800PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 35 Unit A -55 175 °C -55 150 °C Tstg storage temperature -55 150 °C Weight FC 1.5 20 mounting force with clip d Spp/App d Spb/Apb typ. D A A 10 P 1800 PZ IXYS Zyyww Logo N 4.2 mm terminal to backside 4.7 mm Part number XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air Product Marking g Assembly Line = = = = = = = Diode Avalanche Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Date Code Assembly Code Ordering Standard Part Number DAA10P1800PZ Equivalent Circuits for Simulation I V0 R0 Marking on Product DAA10P1800PZ * on die level Delivery Mode Tape & Reel Code No. 515331 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.82 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20131114a DAA10P1800PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 3 4 A2 L e1 D2 1 c 2x e 2x b2 10.92 (0.430) 2x b mm (Inches) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 W E1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 2.41 0.095 0.51 0.99 0.020 0.039 1.14 1.40 0.045 0.055 0.40 0.74 0.016 0.029 1.14 1.40 0.045 0.055 8.38 9.40 0.330 0.370 8.00 8.89 0.315 0.350 2.3 0.091 9.65 10.41 0.380 0.410 6.22 8.50 0.245 0.335 2,54 BSC 0,100 BSC 4.28 0.169 14.61 15.88 0.575 0.625 1.78 2.79 0.070 0.110 1.02 1.68 0.040 0.066 typ. typ. 0.040 0.002 0.02 0.0008 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) All dimensions conform with and/or within JEDEC standard. 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131114a DAA10P1800PZ Rectifier 20 100 102 50 Hz, 80%VRRM VR = 0 V 15 TVJ = 45°C 80 IF TVJ = 45°C IFSM It [A] [A s] 2 10 [A] 2 TVJ = 150°C 60 5 TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C 0 0.5 1.0 1.5 101 40 0.001 2.0 0.01 VF [V] 0.1 1 1 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode Fig. 3 I t versus time per diode 28 18 RthHA = 16 12 10 DC = 1 0.5 0.4 0.33 0.17 0.08 24 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 14 Ptot 2 t [s] 20 IF(AV)M 16 [A] [W] 8 12 6 8 4 4 2 0 0 0 2 4 6 8 10 12 0 50 IF(AV)M [A] 100 150 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 i Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 5 0.00001 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131114a