VBO78-12NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 80 A I FSM = 750 A 1~ Rectifier Bridge Part number VBO78-12NO7 EG 1 ~ K10 ~ L9 PS 18 Features / Advantages: Applications: Package: ECO-PAC2 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 9 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a VBO78-12NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current VR = 1200 V TVJ = 25°C 100 µA VR = 1200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.14 V 1.32 V 1.06 V VF IF = forward voltage drop 40 A IF = 80 A IF = 40 A bridge output current IF = 80 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.29 V T VJ = 150 °C 80 A TVJ = 150 °C 0.81 V d = 0.5 for power loss calculation only Ptot typ. TVJ = 125 °C TC = 115°C I DAV I²t min. 5.9 mΩ 0.7 K/W 0.3 K/W TC = 25°C 175 W t = 10 ms; (50 Hz), sine TVJ = 45°C 750 A t = 8,3 ms; (60 Hz), sine VR = 0 V 810 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 640 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 690 t = 10 ms; (50 Hz), sine TVJ = 45°C 2.82 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.73 kA²s TVJ = 150 °C 2.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 1.98 kA²s 11 pF 20130327a VBO78-12NO7 Package Ratings ECO-PAC2 Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature T VJ virtual junction temperature mounting torque 1.5 typ. max. 100 Unit A -40 125 °C -40 150 °C 2 Nm Weight MD d Spp/App d Spb/Apb VISOL 24 creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 10.0 mm 3000 V 2500 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL ≤ 1 mA Logo Made in Germany Circuit Diagram YYCW Lot# XXX XX-XXXXX Product number Date Code Ordering Standard Part Number VBO78-12NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO78-12NO7 * on die level Delivery Mode Box Code No. 494321 T VJ = 150 °C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 4.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a VBO78-12NO7 1.55 ±0.2 1.55 ±0.2 9.4 ±0.2 C E G I K 10 11 12 B D F H J 4 13 14 15 6 M 45° 4.3 ± Ø 12 ±0.2 15.8 ±0.2 1 2 3 0.2 34.3 ±0.2 A O R T W 7 8 9 25 ±0.2 3.3 ±0.2 5.7 ±0.2 31.6 ±0.1 1.55 ±0.2 10.95 ±0.2 3.3 ±0.2 Outlines ECO-PAC2 16 17 18 L N P S V X 2 8 1 8.3 35.7° 20.3 ±0.2 1.5 43 51 ±0.2 EG 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved ~ K10 ~ L9 PS 18 Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a VBO78-12NO7 Rectifier 700 160 50 Hz 0.8 x V RRM 10000 VR = 0 V 600 120 2 500 IF It TVJ = 45°C IFSM 80 [A] 2 400 40 TVJ = 150°C 1000 [A s] TVJ = 150°C [A] TVJ = 125°C 150°C TVJ = 45°C 300 TVJ = 25°C 0 0.4 0.8 1.2 1.6 200 10-3 2.0 100 10-2 10-1 100 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 50 Ptot 30 140 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 40 2 DC = 0.6 KW 1 KW 2 KW 4 KW 8 KW 1 120 0.8 KW 0.5 0.4 100 IF(AV)M 0.33 80 0.17 [A] 0.08 60 [W] 20 40 10 20 0 0 0 10 20 30 40 0 25 50 75 100 125 0 150 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 0.8 Constants for ZthJC calculation: 0.6 ZthJC 0.4 [K/W] 0.2 i Rth (K/W) ti (s) 1 0.09 0.012 2 0.05 0.007 3 0.32 0.036 4 0.24 0.102 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a