DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a DMA150YA1600NA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current, drain current VR = 1600 V TVJ = 25°C 100 µA VR = 1600 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.21 V 1.68 V 1.15 V VF IF = forward voltage drop min. 50 A typ. I F = 150 A IF = TVJ = 125 °C 50 A I F = 150 A TC = 95°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved V 150 A TVJ = 150 °C 0.82 V d=⅓ for power loss calculation only Ptot 1.75 T VJ = 150 °C 6.3 mΩ 0.6 K/W K/W 0.10 TC = 25°C 165 W t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A t = 8,3 ms; (60 Hz), sine VR = 0 V 865 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 680 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 735 t = 10 ms; (50 Hz), sine TVJ = 45°C 3.20 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 3.12 kA²s TVJ = 150 °C 2.31 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 2.25 kA²s 27 pF 20130128a DMA150YA1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 °C -40 150 °C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL abcde YYWW Z 1.1 1.5 Nm Nm 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part number Product Marking Logo 1.5 10.5 t = 1 second t = 1 minute 1.1 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g D M A 150 YA 1600 NA Part No. XXXXXX = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Half 3~ Bridge, Common Anode Reverse Voltage [V] SOT-227B (minibloc) Assembly Code DateCode Assembly Line Ordering Standard Part Number DMA150YA1600NA Similar Part DMA150YC1600NA Equivalent Circuits for Simulation I V0 R0 Marking on Product DMA150YA1600NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 509181 Voltage class 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.82 V R 0 max slope resistance * 4.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a DMA150YA1600NA Outlines SOT-227B (minibloc) 1 3 2 4 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a DMA150YA1600NA Rectifier 200 700 150 600 104 50 Hz, 80%VRRM VR = 0 V TVJ = 45°C IFSM IF 100 2 It TVJ = 45°C 500 [A] [A] 50 0 0.5 1.0 1.5 2 [A s] TVJ = 150°C 400 TVJ = 150°C TVJ = 125°C TVJ = 25°C 102 300 0.001 2.0 TVJ = 150°C 103 VF [V] Fig. 1 Forward current versus voltage drop per diode 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 150 100 RthHA = 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 Ptot60 DC = 1 0.5 0.4 0.33 0.17 0.08 100 IF(AV)M [W]40 [A] 50 20 0 0 0 10 20 30 40 50 60 70 0 25 50 IF(AV)M [A] 75 100 125 150 175 0 25 50 75 100 125 150 175 [°C] Tamb [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.7 0.6 0.5 Constants for ZthJC calculation: ZthJC i 0.4 Rthi (K/W) ti (s) [K/W] 1 0.017 0.01 0.3 2 0.013 0.00001 3 0.010 0.01 4 0.04 0.04 5 0.12 0.3 0.2 0.1 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a