FUO22-16N 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 30 A I FSM = 150 A 3~ Rectifier Bridge Part number FUO22-16N Backside: isolated 2 5 4 3 1 Features / Advantages: Applications: Package: i4-Pac ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215b FUO22-16N Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current, drain current VR = 1600 V TVJ = 25°C 10 µA VR = 1600 V TVJ = 150°C 1 mA TVJ = 25°C 1.20 V 1.62 V 1.12 V VF IF = forward voltage drop 10 A IF = 30 A IF = 10 A bridge output current IF = 30 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.73 V T VJ = 175 °C 30 A TVJ = 175 °C 0.81 V d=⅓ for power loss calculation only Ptot typ. TVJ = 150 °C TC = 120°C I DAV I²t min. 31 mΩ 3 K/W K/W 0.20 TC = 25°C 50 W t = 10 ms; (50 Hz), sine TVJ = 45°C 150 A t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 130 A t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A t = 10 ms; (50 Hz), sine TVJ = 45°C 115 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 105 A²s 85 A²s 82 A²s TVJ = 150 °C t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20130215b FUO22-16N Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -55 175 °C Weight FC 9 20 mounting force with clip d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 120 N terminal to terminal 1.7 mm terminal to backside 5.1 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking IXYS Logo Part No. UL listed Date Code Ordering Standard Part Number FUO22-16N Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 25 Code No. 500357 T VJ = 175°C Rectifier V 0 max threshold voltage 0.81 R 0 max slope resistance * 28 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product FUO22-16N V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130215b FUO22-16N Outlines i4-Pac D2 A A2 E1 L L1 D D3 D1 R Q E c 1 2 3 4 5 4x e 4x b2 5x b A1 2 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 5 4 3 A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side b4 W Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215b FUO22-16N Rectifier 30 130 120 50 Hz, 80% VRRM 120 100 110 20 IF 80 2 IFSM 100 It [A] 90 2 60 TVJ = 125°C 150°C [A] TVJ = 45°C TVJ = 45°C TVJ = 150°C [A s] 10 40 80 TVJ = 150°C 20 70 TVJ = 25°C 0 0.5 1.0 1.5 60 0.001 2.0 0 0.01 0.1 1 VF [V] t [s] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current 1 10 [ms] 2 Fig. 3 I t versus time per diode 20 DC = 1 0.5 0.4 0.33 0.17 0.08 16 12 30 DC = 1 0.5 0.4 0.33 0.17 0.08 20 Ptot IF(AV)M RthKA K/W 0.6 0.8 1 2 4 8 8 [W] 4 [A] 10 0 0 0 5 10 0 50 100 150 0 50 Tamb [°C] IF(AV)M [A] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 3 ZthJC Constants for ZthJC calculation: 2 i [K/W] 1 Rthi (K/W) ti (s) 1 1.359 0.1015 2 0.3286 0.1026 3 0.4651 0.4919 4 0.8473 0.62 0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215b