VUO22-14NO1

VUO22-14NO1
3~
Rectifier
Standard Rectifier Module
VRRM = 1400 V
I DAV =
30 A
I FSM =
150 A
3~ Rectifier Bridge
Part number
VUO22-14NO1
4/5
6 8 10
1/2
Features / Advantages:
Applications:
Package: V1-A-Pack
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
VUO22-14NO1
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1500
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1400
V
IR
reverse current
VF
VR = 1400 V
TVJ = 25°C
10
µA
TVJ = 150°C
0.7
mA
TVJ = 25°C
10 A
IF =
30 A
IF =
10 A
IF =
30 A
TVJ = 125°C
TC = 110°C
I DAV
bridge output current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
rectangular
I²t
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.19
V
1.59
V
1.13
V
1.66
V
T VJ = 150 °C
30
A
TVJ = 150 °C
0.84
V
d=⅓
for power loss calculation only
value for fusing
typ.
VR = 1400 V
IF =
forward voltage drop
min.
28
mΩ
2.5
K/W
0.4
K/W
TC = 25°C
50
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
150
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
160
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
130
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
140
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
115
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
105
A²s
85
A²s
82
A²s
TVJ = 150 °C
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
4
pF
20130515b
VUO22-14NO1
Package
Ratings
V1-A-Pack
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
100
Unit
A
-40
125
°C
-40
150
°C
2.5
Nm
Weight
MD
37
2
mounting torque
d Spp/App
d Spb/Apb
VISOL
creepage distance on surface | striking distance through air
terminal to terminal
6.0
mm
terminal to backside
12.0
mm
3600
V
3000
V
t = 1 second
isolation voltage
t = 1 minute
g
50/60 Hz, RMS; IISOL ≤ 1 mA
Date Code Location
yywwA
Part Number (Typ)
Lot No.:
2D Data Matrix
Ordering
Standard
Part Number
VUO22-14NO1
Equivalent Circuits for Simulation
I
V0
R0
* on die level
Delivery Mode
Box
Quantity
10
Code No.
461407
T VJ = 150 °C
Rectifier
V 0 max
threshold voltage
0.84
R 0 max
slope resistance *
27
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Marking on Product
VUO22-14NO1
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
VUO22-14NO1
Outlines V1-A-Pack
4/5
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
6 8 10
1/2
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b
VUO22-14NO1
Rectifier
130
30
120
50 Hz
0.8 x V RRM
VR = 0 V
120
100
110
20
80
IF
100
IFSM
[A]
[A]
10
TVJ =
125°C
150°C
2
It
TVJ = 45°C
90
TVJ = 45°C
60
TVJ = 150°C
2
[A s]
40
TVJ = 150°C
80
20
70
TVJ = 25°C
0
0.4
0.8
1.2
1.6
60
10-3
2.0
0
10-2
10-1
t [s]
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
12
0.6 KW
0.8 KW
8
10
Fig. 3 I2t vs. time per diode
36
RthJA:
DC =
1
0.5
0.4
0.33
0.17
0.08
1
t [ms]
VF [V]
16
Ptot
100
DC =
32
1
28
0.5
1
KW
2
KW
24
0.4
4
KW
0.33
8
KW
IF(AV)M 20
[A] 16
0.08
[W]
0.17
12
4
8
4
0
0
0
2
4
6
8
10
12
0
25
50
75
100
125
150
0
175
25
50
TA [°C]
IF(AV)M [A]
75
100 125 150
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
Constants for ZthJC calculation:
ZthJC
1.5
[K/W]
1.0
0.5
0.0
1
10
100
1000
i
Rth (K/W)
ti (s)
1
1.300
0.1015
2
0.300
0.1026
3
0.350
0.4919
4
0.550
0.6200
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b