VUO22-14NO1 3~ Rectifier Standard Rectifier Module VRRM = 1400 V I DAV = 30 A I FSM = 150 A 3~ Rectifier Bridge Part number VUO22-14NO1 4/5 6 8 10 1/2 Features / Advantages: Applications: Package: V1-A-Pack ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b VUO22-14NO1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1500 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1400 V IR reverse current VF VR = 1400 V TVJ = 25°C 10 µA TVJ = 150°C 0.7 mA TVJ = 25°C 10 A IF = 30 A IF = 10 A IF = 30 A TVJ = 125°C TC = 110°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current rectangular I²t CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.19 V 1.59 V 1.13 V 1.66 V T VJ = 150 °C 30 A TVJ = 150 °C 0.84 V d=⅓ for power loss calculation only value for fusing typ. VR = 1400 V IF = forward voltage drop min. 28 mΩ 2.5 K/W 0.4 K/W TC = 25°C 50 W t = 10 ms; (50 Hz), sine TVJ = 45°C 150 A t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 130 A t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A t = 10 ms; (50 Hz), sine TVJ = 45°C 115 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 105 A²s 85 A²s 82 A²s TVJ = 150 °C t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20130515b VUO22-14NO1 Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 °C -40 150 °C 2.5 Nm Weight MD 37 2 mounting torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL ≤ 1 mA Date Code Location yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number VUO22-14NO1 Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Box Quantity 10 Code No. 461407 T VJ = 150 °C Rectifier V 0 max threshold voltage 0.84 R 0 max slope resistance * 27 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product VUO22-14NO1 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b VUO22-14NO1 Outlines V1-A-Pack 4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 6 8 10 1/2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b VUO22-14NO1 Rectifier 130 30 120 50 Hz 0.8 x V RRM VR = 0 V 120 100 110 20 80 IF 100 IFSM [A] [A] 10 TVJ = 125°C 150°C 2 It TVJ = 45°C 90 TVJ = 45°C 60 TVJ = 150°C 2 [A s] 40 TVJ = 150°C 80 20 70 TVJ = 25°C 0 0.4 0.8 1.2 1.6 60 10-3 2.0 0 10-2 10-1 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 12 0.6 KW 0.8 KW 8 10 Fig. 3 I2t vs. time per diode 36 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 1 t [ms] VF [V] 16 Ptot 100 DC = 32 1 28 0.5 1 KW 2 KW 24 0.4 4 KW 0.33 8 KW IF(AV)M 20 [A] 16 0.08 [W] 0.17 12 4 8 4 0 0 0 2 4 6 8 10 12 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IF(AV)M [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 3.0 2.5 2.0 Constants for ZthJC calculation: ZthJC 1.5 [K/W] 1.0 0.5 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 1.300 0.1015 2 0.300 0.1026 3 0.350 0.4919 4 0.550 0.6200 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b