Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS(on) ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 465 A IDM TC = 25°C, Pulse Width Limited by TJM 1560 A IA EAS TC = 25°C TC = 25°C 200 3 A J PD TC = 25°C 600 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 300 260 °C °C 2500 V~ 20..120 / 4.5..27 N/lb. 3 g VISOL 50/60 Hz, RMS IISOL ≤ 1mA TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force t = 1 minute t = 1 second Weight D D G Symbol TJ TJM Tstg D S S G = Gate S = Source Isolated Tab D = Drain Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 75 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 TJ = 150°C © 2010 IXYS CORPORATION, All Rights Reserved z z V 4.0 V ±200 nA 10 μA 1.5 mA Easy to Mount Space Savings High Power Density Applications z z z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications 1.3 mΩ DS100250(03/10) IXFZ520N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 95 VDS = 10V, ID = 60A, Note 1 160 S 41 nF 4150 pF 530 pF 1.36 Ω 48 ns 36 ns 80 ns 35 ns 545 nC 177 nC 135 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 260A Qgd 0.25 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/μs VR = 37.5V 520 A 1600 A 1.25 V 7 150 ns A 357 nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFZ520N075T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 350 VGS = 15V VGS = 15V 10V 8V 300 300 7V 200 250 ID - Amperes ID - Amperes 250 6V 150 5V 100 10V 8V 7V 6V 200 150 5V 100 50 50 4V 4V 0 0 0 0.1 0.2 0.3 0.4 0.0 0.5 0.2 0.4 0.6 0.8 Fig. 3. Output Characteristics @ T J = 150ºC 1.4 1.6 1.8 2.0 Fig. 4. Normalized RDS(on) vs. Junction Temperature VGS = 10V 2.0 I D < 520A 1.8 200 R DS(on) - Normalized ID - Amperes 250 1.2 2.2 VGS = 15V 10V 8V 7V 300 1.0 VDS - Volts VDS - Volts 6V 150 5V 100 1.6 1.4 1.2 1.0 50 4V 0.8 0 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. Normalized RDS(on) vs. Drain Current 500 2.4 2.2 TJ = 175ºC 1.8 ID - Amperes R DS(on) - Normalized 400 2.0 VGS = 10V 15V 1.6 1.4 300 200 1.2 100 TJ = 25ºC 1.0 0.8 0 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXFZ520N075T2 Fig. 8. Transconductance Fig. 7. Input Admittance 280 200 TJ = - 40ºC 180 240 160 g f s - Siemens ID - Amperes 25ºC 200 140 120 100 TJ = 150ºC 80 120 25ºC 60 150ºC 160 80 - 40ºC 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 0 5.5 20 40 60 80 VGS - Volts 140 160 180 200 10 300 250 9 VDS = 37.5V 8 I G = 10mA I D = 260A 7 VGS - Volts IS - Amperes 120 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 100 200 VSD - Volts 300 400 500 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100.0 10,000 RDS(on) Limit Ciss 1,000 25µs 10.0 ID - Amperes Capacitance - NanoFarads 100 ID - Amperes Coss 100µs 100 1ms 1.0 10 TJ = 175ºC Crss f = 1 MHz 10ms TC = 25ºC Single Pulse 0.1 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 10 VDS - Volts 100ms 100 IXFZ520N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 180 180 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 160 VDS = 37.5V 140 140 120 120 I 100 D t r - Nanoseconds t r - Nanoseconds 160 = 200A 80 60 I D VDS = 37.5V TJ = 125ºC 100 80 60 = 100A 40 40 20 20 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 240 td(on) - - - - 120 I D = 100A 40 32 0 30 5 6 7 8 9 100 I D = 200A 34 25 10 35 45 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - RG = 1Ω, VGS = 10V 600 160 500 TJ = 125ºC 100 36 80 34 60 32 60 80 100 120 140 160 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved td(off) - - - - TJ = 125ºC, VGS = 10V 500 180 40 200 400 400 I D = 200A, 100A 300 300 200 200 100 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 120 TJ = 25ºC 600 tf t d(off) - Nanoseconds 140 40 38 70 125 VDS = 37.5V VDS = 37.5V 42 180 90 80 TJ - Degrees Centigrade 44 t f - Nanoseconds 110 RG - Ohms 46 40 120 36 100 4 130 VDS = 37.5V I D = 100A 80 3 td(off) - - - - 38 200 0 tf RG = 1Ω, VGS = 10V 40 t f - Nanoseconds t r - Nanoseconds 300 2 200 t d(off) - Nanoseconds 160 t d(on) - Nanoseconds 400 1 180 140 42 200 I D = 200A VDS = 37.5V 160 44 t f - Nanoseconds tr TJ = 125ºC, VGS = 10V 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 500 120 ID - Amperes IXFZ520N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.400 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds DE475 (IXFZ) Outline G D D G S D D S S D D S IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXFZ520N075T2 (V9)3-03-10