Preliminary Technical Information IXFH160N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 150V 160A Ω 9.0mΩ 160ns TO-247 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 150 150 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 160 440 A A IA EAS TC = 25°C TC = 25°C 80 1.5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 15 V/ns PD TC = 25°C 880 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight G z z z z z z VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved z V 4.5 V ± 200 nA 10 µA 1 mA TJ = 150°C 7.7 Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. 150 International Standard Package High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z VGS = 0V, ID = 250µA D = Drain Tab = Drain Features z BVDSS Tab S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D 9.0 mΩ z z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100228A(04/10) IXFH160N15T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 80 VDS = 10V, ID = 60A, Note 1 130 S 15 nF 1120 pF 113 pF 37 ns 15 ns 50 ns 26 ns 253 nC 67 nC 73 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs TO-247 (IXFH) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.17 °C/W RthJC RthCS °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, Pulse Width Limited by TJM 640 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V 160 ns trr IRM QRM IF = 80A, -di/dt = 100A/µs VR = 75V, VGS = 0V 7.00 A 0.32 µC 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Note 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH160N15T2 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 360 160 VGS = 15V 10V 8V 140 280 120 240 7V 100 ID - Amperes ID - Amperes VGS = 15V 10V 8V 320 80 6V 60 7V 200 160 6V 120 40 80 20 40 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 2 4 6 10 12 14 Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 160 3.4 VGS = 15V 10V 8V 7V 120 2.6 100 6V 80 60 5V 40 VGS = 10V 3.0 R DS(on) - Normalized 140 ID - Amperes 8 VDS - Volts VDS - Volts 2.2 I D = 160A I D = 80A 1.8 1.4 1.0 20 0.6 4V 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 -25 0 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.8 180 VGS = 10V 3.4 160 TJ = 175ºC 140 3.0 120 2.6 ID - Amperes R DS(on) - Normalized 25 2.2 1.8 100 80 60 TJ = 25ºC 1.4 40 1.0 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH160N15T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 240 TJ = - 40ºC 180 200 160 ID - Amperes 140 g f s - Siemens TJ = 150ºC 25ºC - 40ºC 120 100 80 25ºC 160 120 150ºC 80 60 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 350 VDS = 75V 9 300 I D = 80A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 40 80 120 Fig. 11. Capacitance 200 240 280 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 RDS(on) Limit f = 1 MHz 25µs 10,000 100 Ciss 100µs ID - Amperes Capacitance - PicoFarads 160 QG - NanoCoulombs VSD - Volts 1,000 Coss 10 1ms 10ms 1 100 TJ = 175ºC Crss DC T C = 25ºC Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFH160N15T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 24 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V VDS = 75V VDS = 75V 20 t r - Nanoseconds t r - Nanoseconds 22 20 I D = 160A 18 I D = 80A 16 TJ = 25ºC 18 16 TJ = 125ºC 14 14 12 12 25 35 45 55 65 75 85 95 105 115 80 125 90 100 110 TJ - Degrees Centigrade 500 120 60 100 t f - Nanoseconds t r - Nanoseconds 200 40 0 8 10 12 14 34 70 I D = 80A, 160A 30 60 26 50 22 40 18 20 6 25 16 35 45 55 34 95 105 115 30 125 300 tf td(off) - - - - RG = 2Ω, VGS = 10V 85 26 55 24 45 t f - Nanoseconds 65 TJ = 25ºC, 125ºC 275 250 VDS = 75V 225 300 I D 200 = 160A 175 200 150 I D = 80A 125 100 100 75 22 80 90 100 110 120 130 140 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 150 35 160 0 50 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 75 t d(off) - Nanoseconds 30 td(off) - - - - TJ = 125ºC, VGS = 10V 400 VDS = 75V t f - Nanoseconds 85 500 95 28 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 65 TJ - Degrees Centigrade RG - Ohms 32 80 t d(off) - Nanoseconds I D = 80A td(off) - - - - VDS = 75V t d(on) - Nanoseconds 80 4 160 RG = 2Ω, VGS = 10V 38 100 I D = 160A 300 2 150 90 tf VDS = 75V 140 42 td(on) - - - - TJ = 125ºC, VGS = 10V 400 130 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFH160N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_160N15T2(7V)1-14-10-A