Data Sheet - IXYS Corporation

Preliminary Technical Information
IXTP32N65X
IXTQ32N65X
IXTH32N65X
X-Class
Power MOSFET
VDSS
ID25
= 650V
= 32A
 135m

RDS(on)
N-Channel Enhancement Mode
TO-220AB (IXTP)
GD
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
650
V
VDGR
TJ = 25C to 150C, RGS = 1M
650
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
32
A
IDM
TC = 25C, Pulse Width Limited by TJM
64
A
dv/dt
IS  ID25, VDD  VDSS, TJ  150°C
30
V/ns
PD
TC = 25C
500
W
TO-3P (IXTQ)
-55 ... +150
C
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
3.0
5.5
6.0
g
g
g
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
TO-220
TO-3P
TO-247
G
D
TO-247 (IXTH)
G
BVDSS
VGS = 0V, ID = 250μA
650
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)

V

V
100 nA
VGS = 10V, ID = 0.5 • ID25, Note 1
Low RDS(ON) and QG
Low Package Inductance
Fast Intrinsic Rectifier
High Power Density
Easy to Mount
Space Savings
Applications
5 A
50 A

135 m




© 2015 IXYS CORPORATION, All Rights Reserved
D
= Drain
Tab = Drain
Advantages

TJ = 125C
Tab
S
Features

Characteristic Values
Min.
Typ.
Max.
D
G = Gate
S = Source

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
S
Tab

5.5
Tab
S
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100585D(6/15)
IXTP32N65X IXTQ32N65X
IXTH32N65X
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
13
RGi
Gate Input Resistance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
22
S
2.6

2205
pF
1600
pF
30
pF
111
349
pF
pF
23
ns
49
ns
58
ns
28
ns
54
nC
12
nC
29
nC
Crss
Effective Output Capacitance
Co(er)
Co(tr)
Energy related
td(on)
Resistive Switching Times
tr
td(off)
tf
Time related
VGS = 0V
VDS = 0.8 • VDSS
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.25 C/W
RthJC
RthCS
TO-220
TO-247 & TO-3P
C/W
C/W
0.50
0.25
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max
32
A
Repetitive, pulse Width Limited by TJM
128
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 16A, -di/dt = 100A/μs
400
6.1
31
VR = 100V
ns
C
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTP32N65X IXTQ32N65X
IXTH32N65X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
32
70
VGS = 10V
VGS = 10V
28
60
9V
8V
50
20
16
I D - Amperes
I D - Amperes
24
7V
12
8V
40
30
7V
20
8
4
10
6V
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4.5
5
10
15
VDS - Volts
32
3.8
VGS = 10V
8V
30
VGS = 10V
3.4
3.0
RDS(on) - Normalized
24
7V
I D - Amperes
25
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
28
20
VDS - Volts
20
16
12
6V
8
2.6
I D = 32A
2.2
1.8
I D = 16A
1.4
1.0
4
0.6
5V
0.2
0
0
1
2
3
4
5
6
7
8
9
10
11
-50
12
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
4.0
VGS = 10V
1.2
3.5
BVDSS / VGS(th) - Normalized
RDS(on) - Normalized
TJ = 125ºC
3.0
2.5
TJ = 25ºC
2.0
1.5
BVDSS
1.1
1.0
0.9
0.8
VGS(th)
0.7
1.0
0.6
0.5
0
10
20
30
40
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
50
60
70
-60
-40
-20
0
20
40
60
80
TJ - Degrees Centigrade
100
120
140
IXTP32N65X IXTQ32N65X
IXTH32N65X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
45
35
40
30
35
25
I D - Amperes
I D - Amperes
30
20
15
25
20
TJ = 125ºC
25ºC
- 40ºC
15
10
10
5
5
0
0
-50
-25
0
25
50
75
100
125
4.0
150
4.5
5.0
5.5
TC - Degrees Centigrade
6.0
6.5
7.0
7.5
8.0
8.5
VGS - Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
40
100
TJ = - 40ºC
90
35
80
70
25ºC
25
I S - Amperes
g f s - Siemens
30
125ºC
20
15
60
50
40
TJ = 125ºC
30
10
TJ = 25ºC
20
5
10
0
0
0
5
10
15
20
25
30
35
40
45
50
0.4
0.5
0.6
0.7
I D - Amperes
0.8
0.9
1.0
1.1
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10,000
10
VDS = 325V
VGS - Volts
8
Capacitance - PicoFarads
I D = 16A
I G = 10mA
6
4
Ciss
1,000
100
Coss
10
2
Crss
f = 1 MHz
0
1
0
5
10
15
20
25
30
35
40
45
50
55
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1000
IXTP32N65X IXTQ32N65X
IXTH32N65X
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
22
100
RDS(on) Limit
20
25µs
18
100µs
10
14
I D - Amperes
E OSS - MicroJoules
16
12
10
8
1ms
1
6
TJ = 150ºC
4
TC = 25ºC
Single Pulse
2
10ms
0.1
0
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_32N65X(J7) 6-17-15-A
IXTP32N65X IXTQ32N65X
IXTH32N65X
TO-220 Outline
E
TO-3P Outline
TO-247 Outline
A
oP
A1
A
A2
E
H1
Q
0P
0P1
D
A
A2
A2
Q
+
+
D1
D
D1
1
2
A2
EJECTOR
D2
0P1
1
3
L1
S
+
D1
D
4
E1
+
R
A
+ 0K M D B M
0P O
B
E
S
+
D2
D
PIN
E1
2
3
4
ixys option
L1
A1
C
E1
L
L1
L
e
c
e1
3X b2
1 - Gate
2,4 - Drain
3 - Source
b
b2
3X b
c
b4
e
A1
c
b
b2
b4
e
+ J M C AM
O
PINS: 1 - Gate
2, 4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
PINS: 1 - Gate
2, 4 - Drain
3 - Source