IXYS IXFT44N50Q3

Advance Technical Information
IXFT44N50Q3
IXFH44N50Q3
HiperFETTM
Power MOSFETs
Q3-Class
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
= 500V
= 44A
Ω
≤ 140mΩ
≤ 250ns
TO-268 (IXFT)
G
S
D (Tab)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
44
A
130
A
TC = 25°C
44
A
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
PD
TC = 25°C
830
W
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
4.0
6.0
g
g
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-268
TO-247
TO-247 (IXFH)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
z
z
z
z
z
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
500
VGS(th)
VDS = VGS, ID = 4mA
3.5
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2011 IXYS CORPORATION, All Rights Reserved
z
V
6.5
V
±100
nA
25 μA
1 mA
140 mΩ
High Power Density
Easy to Mount
Space Savings
Applications
z
z
z
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS100381(09/11)
IXFT44N50Q3
IXFH44N50Q3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
17
Ciss
Coss
28
S
4800
pF
625
pF
56
pF
0.13
Ω
33
ns
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
70
ns
11
ns
36
ns
93
nC
34
nC
44
nC
Terminals: 1 - Gate
3 - Source
2,4 - Drain
0.15 °C/W
RthJC
RthCS
TO-268 Outline
TO-247
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
IRM
QRM
Characteristic Values
Min.
Typ.
Max.
44
A
Repetitive, Pulse Width Limited by TJM
176
A
IF = IS, VGS = 0V, Note 1
1.4
V
250
ns
IF = 22A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
13.2
A
1.4
μC
TO-247 Outline
1
2
∅P
3
e
Note
Terminals: 1 - Gate
3 - Source
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFT44N50Q3
IXFH44N50Q3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
45
100
VGS = 10V
9V
40
80
35
70
ID - Amperes
30
ID - Amperes
VGS = 10V
90
25
8V
20
15
60
9V
50
40
30
10
8V
20
7V
5
10
6V
0
0
1
2
3
4
5
7V
0
6
7
0
5
10
20
25
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
45
3.4
VGS = 10V
8V
40
VGS = 10V
3.0
R DS(on) - Normalized
35
30
ID - Amperes
15
VDS - Volts
VDS - Volts
25
20
7V
15
2.6
I D = 44A
2.2
I D = 22A
1.8
1.4
1.0
10
0.6
6V
5
5V
0
0
2
4
6
8
10
12
0.2
14
16
-50
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
50
3.4
VGS = 10V
3.0
40
ID - Amperes
R DS(on) - Normalized
TJ = 125ºC
2.6
2.2
TJ = 25ºC
1.8
30
20
1.4
10
1.0
0.6
0
0
10
20
30
40
50
60
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
70
80
90
100
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFT44N50Q3
IXFH44N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
50
TJ = - 40ºC
45
60
25ºC
40
125ºC
35
g f s - Siemens
ID - Amperes
50
40
30
TJ = 125ºC
25ºC
- 40ºC
30
25
20
15
20
10
10
5
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
0
10
10
20
30
VGS - Volts
40
50
60
70
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
16
140
VDS = 250V
14
120
I D = 22A
I G = 10mA
12
VGS - Volts
IS - Amperes
100
80
60
TJ = 125ºC
40
10
8
6
4
TJ = 25ºC
20
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
10
20
30
VSD - Volts
50
60
70
80
90
100
110
120
130
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
10,000
RDS(on) Limit
Ciss
100
1,000
ID - Amperes
Capacitance - PicoFarads
40
Coss
25µs
100µs
10
100
1
TJ = 150ºC
Crss
1ms
TC = 25ºC
Single Pulse
f = 1 MHz
10
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFT44N50Q3
IXFH44N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13 Maximum Transient Thermal Impedance
0.4
Z (th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N50Q3(Q7)9-09-11