Advance Technical Information IXFT44N50Q3 IXFH44N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 44A Ω ≤ 140mΩ ≤ 250ns TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 44 A 130 A TC = 25°C 44 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 830 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved z V 6.5 V ±100 nA 25 μA 1 mA 140 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100381(09/11) IXFT44N50Q3 IXFH44N50Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 17 Ciss Coss 28 S 4800 pF 625 pF 56 pF 0.13 Ω 33 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 70 ns 11 ns 36 ns 93 nC 34 nC 44 nC Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.15 °C/W RthJC RthCS TO-268 Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 22A, -di/dt = 100A/μs VR = 100V, VGS = 0V 13.2 A 1.4 μC TO-247 Outline 1 2 ∅P 3 e Note Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT44N50Q3 IXFH44N50Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 100 VGS = 10V 9V 40 80 35 70 ID - Amperes 30 ID - Amperes VGS = 10V 90 25 8V 20 15 60 9V 50 40 30 10 8V 20 7V 5 10 6V 0 0 1 2 3 4 5 7V 0 6 7 0 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 45 3.4 VGS = 10V 8V 40 VGS = 10V 3.0 R DS(on) - Normalized 35 30 ID - Amperes 15 VDS - Volts VDS - Volts 25 20 7V 15 2.6 I D = 44A 2.2 I D = 22A 1.8 1.4 1.0 10 0.6 6V 5 5V 0 0 2 4 6 8 10 12 0.2 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 3.4 VGS = 10V 3.0 40 ID - Amperes R DS(on) - Normalized TJ = 125ºC 2.6 2.2 TJ = 25ºC 1.8 30 20 1.4 10 1.0 0.6 0 0 10 20 30 40 50 60 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT44N50Q3 IXFH44N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 50 TJ = - 40ºC 45 60 25ºC 40 125ºC 35 g f s - Siemens ID - Amperes 50 40 30 TJ = 125ºC 25ºC - 40ºC 30 25 20 15 20 10 10 5 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 0 10 10 20 30 VGS - Volts 40 50 60 70 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 140 VDS = 250V 14 120 I D = 22A I G = 10mA 12 VGS - Volts IS - Amperes 100 80 60 TJ = 125ºC 40 10 8 6 4 TJ = 25ºC 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 VSD - Volts 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10,000 RDS(on) Limit Ciss 100 1,000 ID - Amperes Capacitance - PicoFarads 40 Coss 25µs 100µs 10 100 1 TJ = 150ºC Crss 1ms TC = 25ºC Single Pulse f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT44N50Q3 IXFH44N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13 Maximum Transient Thermal Impedance 0.4 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N50Q3(Q7)9-09-11