Preliminary Technical Information HiPerFASTTM IGBT Lightspeed 2TM Series IXGK120N60C2 IXGX120N60C2 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 2.5V 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES VGEM Continuous Transient ± 20 ± 30 V V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C (chip capability) 120 A ICM TC = 25°C, 1ms 500 A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 200 A (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 830 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (TO-264) 1.13 / 10 Nm/lb.in FC Mounting force (PLUS247) 20..120/4.5..27 N/lb TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10 seconds 260 °C Weight TO-264 PLUS247 10 6 g g G C (TAB) E PLUS247(IXGX) G C G = Gate E = Emitter E (TAB) C = Collector TAB = Collector Features z Very high frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 600 VGE(th) IC = 500μA, VCE = VGE 3.0 ICES V 5.5 100 μA VCE = VCES VGE = 0V V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 2 mA ± 200 nA TJ = 125°C © 2007 IXYS CORPORATION,All rights reserved 2.1 1.6 2.5 V Advantages High power density z Very fast switching speeds for high frequency applications z High power surface mountable packages z V DS99515A(11/07) IXGK120N60C2 IXGX120N60C2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Min. IC = 60A, VCE = 10V, Note 1 Characteristic Values Typ Max. 50 78 S VCE = 25V, VGE = 0V, f = 1MHz 14.6 820 280 nF pF pF IC = 100A, VGE = 15V, VCE = 0.5 • VCES 370 85 155 nC nC nC 40 60 1.7 120 80 ns ns mJ ns ns Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 400V, RG = 1Ω 180 Eoff 1.0 td(on) tri Eon td(off) tfi Eoff 40 60 2.1 165 92 1.24 ns ns mJ ns ns mJ 0.15 0.15 °C/W °C/W Inductive load, TJ = 125°C IC = 80A, VGE = 15V VCE = 400V, RG = 1Ω RthJC RthJC 1.8 mJ TO-264 AA (IXGK) Outline Pins:1-Gate 2- Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXGX) Outline Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK120N60C2 IXGX120N60C2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGE = 15V 13V 11V 180 160 250 140 9V 120 IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 100 80 8V 60 200 9V 150 8V 100 40 50 20 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 4 6 7 8 9 VCE(sat) - Normalized 120 8V 100 80 60 7V 40 1.8 1.6 1.4 1.2 0 0.4 1.2 1.4 1.6 1.8 2.0 2.2 2.4 C = 200A I C = 100A I C = 50A 0.8 0.6 1.0 I 1.0 20 0.8 VGE = 15V 2.0 9V 0.6 10 2.2 140 2.6 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 140 4.5 TJ = 25ºC 120 4.0 TJ = 125ºC 25ºC - 40ºC 100 IC - Amperes 3.5 VCE - Volts 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature 160 0.4 3 Fig. 3. Output Characteristics @ 125ºC VGE = 15V 13V 11V 0.2 2 VCE - Volts 180 0.0 1 VCE - Volts 200 IC - Amperes 7V 7V 3.0 I C = 200A 2.5 80 60 40 100A 2.0 20 50A 1.5 0 7 8 9 10 11 12 VGE - Volts © 2007 IXYS CORPORATION,All rights reserved 13 14 15 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 IXGK120N60C2 IXGX120N60C2 Fig. 8. Gate Charge Fig. 7. Transconductance 140 16 TJ = - 40ºC g f s - Siemens I C = 100A I G = 10mA 12 25ºC 100 VCE = 300V 14 120 VGE - Volts 125ºC 80 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 0 160 50 100 Fig. 9. Capacitance 200 250 300 350 400 Fig. 10. Reverse-Bias Safe Operating Area 220 100.0 f = 1 MHz 200 180 160 10.0 IC - Amperes Capacitance - NanoFarads 150 QG - NanoCoulombs IC - Amperes Cies Coes 1.0 5 10 15 20 120 100 80 60 TJ = 125ºC 40 RG = 1Ω dv / dt < 10V / ns 20 Cres 0.1 0 140 25 30 35 0 100 40 200 300 VCE - Volts 400 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGK120N60C2 IXGX120N60C2 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current --- TJ = 125ºC , VGE = 15V 4.0 VCE = 400V 2.8 VCE = 400V 4.5 2.4 3.0 2.0 2.5 1.6 2.0 1.2 1.5 4.0 2.5 3.5 I C = 80A 2.0 3.0 1.5 2.5 0.8 1.0 1.0 2.0 0.4 0.5 1.5 0.0 0.5 2 3 4 5 6 7 8 9 40 10 60 70 100 110 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.8 4.0 Eon 1.6 VCE = 400V ---- 3.0 RG = 1Ω , VGE = 15V 2.5 1.2 - MilliJoules Eoff 3.5 on 2.0 240 E I C = 120A 2.0 I C = 80A 0.8 0.4 35 45 55 65 75 85 95 105 115 500 220 tf td(off) - - - - 200 VCE = 400V 400 180 350 I 160 td(off) - - - - I 1.5 100 1.0 125 80 C 100 1 2 3 4 150 80 140 130 TJ = 25ºC 40 120 20 110 0 90 IC - Amperes © 2007 IXYS CORPORATION,All rights reserved 100 110 100 120 t f - Nanoseconds 100 80 7 8 9 10 tf td(off) - - - - 170 RG = 1Ω , VGE = 15V VCE = 400V 150 160 I 125 C = 120A 150 100 140 75 130 I C = 80A 50 120 25 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 110 125 t d(off) - Nanoseconds 160 TJ = 125ºC 70 6 180 175 t d(off) - Nanoseconds 170 60 5 200 190 140 50 200 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 60 = 80A 150 200 VCE = 400V 120 300 250 120 210 RG = 1Ω , VGE = 15V = 120A RG - Ohms 220 180 C 140 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 450 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 200 0.0 120 t d(off) - Nanoseconds 2.4 40 90 Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 4.5 160 80 IC - Amperes 3.2 25 50 RG - Ohms t f - Nanoseconds 1 t f - Nanoseconds 3.5 TJ = 125ºC, 25ºC - MilliJoules = 120A 4.0 RG = 1Ω , VGE = 15V on C 5.0 - MilliJoules 3.0 3.2 on I 5.5 E 3.5 4.5 Eon ---- Eoff E Eoff - MilliJoules Eon - Eoff 4.5 Eoff - MilliJoules 3.6 6.0 Eoff - MilliJoules 5.0 IXGK120N60C2 IXGX120N60C2 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 90 TJ = 125ºC, VGE = 15V I C 80 = 120A 120 70 I 100 C = 80A 60 80 50 60 40 40 30 t d(on) - Nanoseconds 140 52 110 tr 100 RG = 1Ω , VGE = 15V td(on) - - - - 2 3 4 5 6 7 8 9 48 VCE = 400V 90 46 80 44 70 42 TJ = 25ºC 60 40 50 38 TJ = 125ºC 40 1 50 36 30 34 20 40 10 t d(on) - Nanoseconds VCE = 400V t r - Nanoseconds tr 160 t r - Nanoseconds 120 100 50 60 70 80 90 100 110 32 120 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 50 110 48 t r - Nanoseconds tr I td(on) - - - - C = 120A RG = 1Ω , VGE = 15V 90 46 44 VCE = 400V 80 42 70 40 60 t d(on) - Nanoseconds 100 38 I C = 80A 50 25 35 45 55 65 75 85 95 105 115 36 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_120N60C2(9D)11-06-07