High-Gain IGBTs IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 VCES = 600V IC110 = 36A VCE(sat) ≤ 2.50V High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 90 36 220 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 72 VCE ≤ VCES A PC TC = 25°C 290 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G CE C (Tab) TO-247 (IXGH) G C C (Tab) E G = Gate S = Emitter D = Collector Tab = Collector Features z z z Optimized for Low Switching Losses International Standard Packages Square RBSOA Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 125°C z V 6.5 V 25 μA 1 mA TJ = 125°C IGES z 1.95 1.65 ±100 nA 2.50 V V Applications z z z z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Lamp Ballasts DS100298B(04/11) IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Characteristic Values Min. Typ. Max. IC = IC110, VCE = 10V, Note 1 20 VCE = 25V, VGE = 0V, f = 1MHz IC = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 36A, VGE = 15V VCE = 400V, RG = 10Ω Note 2 Inductive Load, TJ = 125°C IC = 36A, VGE = 15V VCE = 400V, RG = 10Ω Note 2 TO-247 TO-220 TO-263 Outline 30 S 1900 100 60 pF pF pF 113 nC 13 nC 44 nC 40 66 0.95 270 63 0.84 ns ns mJ ns ns mJ 1.55 30 45 1.10 210 96 0.90 ns ns mJ ns ns mJ 0.21 0.50 0.43 °C/W °C/W °C/W 1 = Gate 2 = Collector 3 = Emitter 4 = Collector TO-220 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Dim. TO-247 Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter 2 - Collector Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 = Gate 2 = Collector Pins: 1 - Gate 3 = Emitter 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 100 VGE = 15V 13V 11V 10V 90 80 IC - Amperes 60 8V 50 14V 13V 250 9V 70 IC - Amperes VGE = 15V 300 40 12V 200 11V 150 10V 9V 100 30 8V 7V 20 50 10 7V 6V 0 6V 0 0 0.5 1 1.5 2 2.5 3 0 5 10 20 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 100 1.3 VGE = 15V 13V 12V 11V 10V 80 70 1.2 VCE(sat) - Normalized 90 IC - Amperes 15 VCE - Volts VCE - Volts 9V 60 50 8V 40 30 I C = 72A I C = 36A I C = 18A 1.1 1.0 0.9 0.8 7V 20 0.7 VGE = 15V 10 6V 0.6 0 0 0.5 1 1.5 2 2.5 -25 3 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 4.5 TJ = 25ºC 140 4.0 120 3.0 I 2.5 C IC - Amperes VCE - Volts 3.5 = 72A 36A 2.0 TJ = - 40ºC 25ºC 100 80 125ºC 60 40 18A 20 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5 5.5 6 6.5 7 7.5 VGE - Volts 8 8.5 9 9.5 10 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 8. Gate Charge Fig. 7. Transconductance 45 16 40 35 I C = 36A I G = 10mA 12 30 25ºC VGE - Volts g f s - Siemens VCE = 300V 14 TJ = - 40ºC 25 125ºC 20 15 10 8 6 4 10 2 5 0 0 0 20 40 60 80 100 120 140 0 20 40 Fig. 9. Capacitance 80 100 120 Fig. 10. Reverse-Bias Safe Operating Area 10,000 80 f = 1 MHz 70 60 Cies 1,000 IC - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs IC - Amperes Coes 100 50 40 30 20 Cres 10 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 10Ω dv / dt < 10V / ns 0 100 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.5 3.5 4.5 Eon - Eoff 4 --- 4 2 2 1.5 1.5 I 1 C = 36A Eoff - MilliJoules Eoff - MilliJoules 2.5 0 1.5 1 0.5 30 0.5 0 0 15 35 25 35 RG - Ohms 2 2 1.5 1.5 1 1 I C = 36A 0.5 0.5 0 35 45 55 65 75 85 95 t f i - Nanoseconds I C = 72A 105 115 0 125 450 VCE = 400V 120 400 115 I C 350 = 72A 110 300 I 105 C = 36A 200 95 150 90 100 10 15 20 td(off) - - - - tfi 120 70 200 50 160 30 120 35 45 55 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 65 75 t f i - Nanoseconds 240 TJ = 25ºC, 125ºC 300 VCE = 400V 280 100 260 90 240 80 I C = 36A I C = 72A 220 70 200 60 180 50 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 160 125 t d(off) - Nanoseconds 280 t d(off) - Nanoseconds 110 td(on) - - - - RG = 10Ω , VGE = 15V 110 VCE = 400V t f i - Nanoseconds 320 320 RG = 10Ω , VGE = 15V 25 35 130 360 15 30 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 150 90 25 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 250 100 TJ - Degrees Centigrade 130 500 t d(off) - Nanoseconds 2.5 td(off) - - - - TJ = 125ºC, VGE = 15V 125 VCE = 400V 25 75 550 tfi 130 3 Eon - MilliJoules Eoff - MilliJoules ---- RG = 10Ω , VGE = 15V 2.5 65 135 3.5 Eon 55 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eoff 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3 2 1.5 0 25 TJ = 125ºC, 25ºC 2 1 0.5 20 2.5 1 0.5 15 3 Eon - MilliJoules I C = 72A 2.5 Eon - MilliJoules 3 ---- VCE = 400V 2.5 3 Eon RG = 10Ω , VGE = 15V 3.5 VCE = 400V 10 Eoff 3 TJ = 125ºC , VGE = 15V 3.5 3.5 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri td(on) - - - - TJ = 125ºC, VGE = 15V VCE = 400V 100 80 120 70 100 60 I C = 72A 80 50 60 40 I 40 C = 36A 15 tri td(on) - - - - 70 RG = 10Ω , VGE = 15V VCE = 400V 60 80 50 TJ = 25ºC 60 40 40 30 TJ = 125ºC 20 10 80 t d(on) - Nanoseconds 120 140 t d(on) - Nanoseconds t r i - Nanoseconds 140 90 t r i - Nanoseconds 160 20 25 30 30 20 20 0 20 10 15 35 25 35 45 55 65 75 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 56 tri 140 RG = 10Ω , VGE = 15V VCE = 400V 120 100 I C 52 48 44 = 72A 80 40 60 36 40 32 I C = 36A 20 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - 28 0 25 35 45 55 65 75 85 95 105 115 24 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_50N60C4(L5)03-23-11