IXYS IXGA50N60C4

High-Gain IGBTs
IXGA50N60C4
IXGP50N60C4
IXGH50N60C4
VCES = 600V
IC110 = 36A
VCE(sat) ≤ 2.50V
High-Speed PT Trench IGBT
TO-263 AA (IXGA)
G
E
C (Tab)
TO-220AB (IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
90
36
220
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 72
VCE ≤ VCES
A
PC
TC = 25°C
290
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
10..65 / 2.2..14.6
1.13 / 10
N/lb.
Nm/lb.in.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247
G
CE
C (Tab)
TO-247 (IXGH)
G
C
C (Tab)
E
G = Gate
S = Emitter
D
= Collector
Tab = Collector
Features
z
z
z
Optimized for Low Switching Losses
International Standard Packages
Square RBSOA
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
600
VGE(th)
IC
= 250μA, VCE = VGE
4.0
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 36A, VGE = 15V, Note 1
TJ = 125°C
z
V
6.5
V
25 μA
1 mA
TJ = 125°C
IGES
z
1.95
1.65
±100
nA
2.50
V
V
Applications
z
z
z
z
z
z
z
© 2011 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Lamp Ballasts
DS100298B(04/11)
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Characteristic Values
Min.
Typ.
Max.
IC = IC110, VCE = 10V, Note 1
20
VCE = 25V, VGE = 0V, f = 1MHz
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
Inductive Load, TJ = 125°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
TO-247
TO-220
TO-263 Outline
30
S
1900
100
60
pF
pF
pF
113
nC
13
nC
44
nC
40
66
0.95
270
63
0.84
ns
ns
mJ
ns
ns
mJ
1.55
30
45
1.10
210
96
0.90
ns
ns
mJ
ns
ns
mJ
0.21
0.50
0.43 °C/W
°C/W
°C/W
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
TO-220 Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Dim.
TO-247 Outline
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1 = Gate
2 = Collector
Pins: 1 - Gate
3 = Emitter
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
100
VGE = 15V
13V
11V
10V
90
80
IC - Amperes
60
8V
50
14V
13V
250
9V
70
IC - Amperes
VGE = 15V
300
40
12V
200
11V
150
10V
9V
100
30
8V
7V
20
50
10
7V
6V
0
6V
0
0
0.5
1
1.5
2
2.5
3
0
5
10
20
25
30
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
100
1.3
VGE = 15V
13V
12V
11V
10V
80
70
1.2
VCE(sat) - Normalized
90
IC - Amperes
15
VCE - Volts
VCE - Volts
9V
60
50
8V
40
30
I
C
= 72A
I
C
= 36A
I
C
= 18A
1.1
1.0
0.9
0.8
7V
20
0.7
VGE = 15V
10
6V
0.6
0
0
0.5
1
1.5
2
2.5
-25
3
0
25
VCE - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
4.5
TJ = 25ºC
140
4.0
120
3.0
I
2.5
C
IC - Amperes
VCE - Volts
3.5
= 72A
36A
2.0
TJ = - 40ºC
25ºC
100
80
125ºC
60
40
18A
20
1.5
0
6
7
8
9
10
11
12
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
13
14
15
4.5
5
5.5
6
6.5
7
7.5
VGE - Volts
8
8.5
9
9.5
10
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 8. Gate Charge
Fig. 7. Transconductance
45
16
40
35
I C = 36A
I G = 10mA
12
30
25ºC
VGE - Volts
g f s - Siemens
VCE = 300V
14
TJ = - 40ºC
25
125ºC
20
15
10
8
6
4
10
2
5
0
0
0
20
40
60
80
100
120
140
0
20
40
Fig. 9. Capacitance
80
100
120
Fig. 10. Reverse-Bias Safe Operating Area
10,000
80
f = 1 MHz
70
60
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
60
QG - NanoCoulombs
IC - Amperes
Coes
100
50
40
30
20
Cres
10
10
0
5
10
15
20
25
30
35
40
TJ = 125ºC
RG = 10Ω
dv / dt < 10V / ns
0
100
150
200
250
VCE - Volts
300
350
400
450
500
550
600
650
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
4.5
3.5
4.5
Eon -
Eoff
4
---
4
2
2
1.5
1.5
I
1
C
= 36A
Eoff - MilliJoules
Eoff - MilliJoules
2.5
0
1.5
1
0.5
30
0.5
0
0
15
35
25
35
RG - Ohms
2
2
1.5
1.5
1
1
I C = 36A
0.5
0.5
0
35
45
55
65
75
85
95
t f i - Nanoseconds
I C = 72A
105
115
0
125
450
VCE = 400V
120
400
115
I
C
350
= 72A
110
300
I
105
C = 36A
200
95
150
90
100
10
15
20
td(off) - - - -
tfi
120
70
200
50
160
30
120
35
45
55
IC - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
65
75
t f i - Nanoseconds
240
TJ = 25ºC, 125ºC
300
VCE = 400V
280
100
260
90
240
80
I C = 36A
I C = 72A
220
70
200
60
180
50
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
160
125
t d(off) - Nanoseconds
280
t d(off) - Nanoseconds
110
td(on) - - - -
RG = 10Ω , VGE = 15V
110
VCE = 400V
t f i - Nanoseconds
320
320
RG = 10Ω , VGE = 15V
25
35
130
360
15
30
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
150
90
25
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
tfi
250
100
TJ - Degrees Centigrade
130
500
t d(off) - Nanoseconds
2.5
td(off) - - - -
TJ = 125ºC, VGE = 15V
125
VCE = 400V
25
75
550
tfi
130
3
Eon - MilliJoules
Eoff - MilliJoules
----
RG = 10Ω , VGE = 15V
2.5
65
135
3.5
Eon
55
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
3.5
Eoff
45
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
3
2
1.5
0
25
TJ = 125ºC, 25ºC
2
1
0.5
20
2.5
1
0.5
15
3
Eon - MilliJoules
I C = 72A
2.5
Eon - MilliJoules
3
----
VCE = 400V
2.5
3
Eon
RG = 10Ω , VGE = 15V
3.5
VCE = 400V
10
Eoff
3
TJ = 125ºC , VGE = 15V
3.5
3.5
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
tri
td(on) - - - -
TJ = 125ºC, VGE = 15V
VCE = 400V
100
80
120
70
100
60
I
C
= 72A
80
50
60
40
I
40
C
= 36A
15
tri
td(on) - - - -
70
RG = 10Ω , VGE = 15V
VCE = 400V
60
80
50
TJ = 25ºC
60
40
40
30
TJ = 125ºC
20
10
80
t d(on) - Nanoseconds
120
140
t d(on) - Nanoseconds
t r i - Nanoseconds
140
90
t r i - Nanoseconds
160
20
25
30
30
20
20
0
20
10
15
35
25
35
45
55
65
75
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
160
56
tri
140
RG = 10Ω , VGE = 15V
VCE = 400V
120
100
I
C
52
48
44
= 72A
80
40
60
36
40
32
I C = 36A
20
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
28
0
25
35
45
55
65
75
85
95
105
115
24
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_50N60C4(L5)03-23-11