GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE(sat) tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ICM TC = 25°C (Limited by Leads) TC = 110°C (Chip Capability) TC = 25°C, 1ms 75 72 360 A A A IA EAS TC = 25°C TC = 25°C 50 500 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 150 VCE ≤ VCES A PC TC = 25°C 540 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.5 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved V 50 μA 1 mA TJ = 125°C 2.10 1.65 E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z z z z Optimized for Low Switching Losses Square RBSOA Avalanche Rated International Standard Package Advantages z z IC C High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. BVCES 600V 72A 2.5V 55ns TO-247 AD z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) = = ≤ = ±100 nA 2.50 V V z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99961B(11/09) IXGH72N60C3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 50A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff = 50A, VCE = 10V, Note 1 33 Inductive Load, TJ = 25°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 Inductive Load, TJ = 125°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 RthJC RthCK Notes: TO-247 (IXGH) Outline 55 S 4780 330 117 pF pF pF 174 33 72 nC nC nC 27 37 1.03 77 55 0.48 ns ns mJ ns ns mJ 130 110 0.95 26 36 1.48 120 124 0.93 ns ns mJ ns ns mJ 0.21 0.23 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Tab - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH72N60C3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 350 VGE = 15V 13V 11V 90 80 11V 9V 250 IC - Amperes 70 IC - Amperes VGE = 15V 13V 300 60 50 7V 40 30 200 9V 150 100 20 7V 50 10 5V 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 0 2 4 6 VCE - Volts 12 14 1.3 100 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 VCE(sat) - Normalized 9V 70 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on JunctionTemperature Fig. 3. Output Characteristics @ T J = 125ºC 60 50 7V 40 30 1.1 I = 100A C 1.0 0.9 I C = 50A 0.8 0.7 20 I C = 25A 0.6 5V 10 0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 5.0 TJ = 25ºC 4.5 90 80 4.0 3.5 C TJ = 125ºC 25ºC - 40ºC 70 = 100A 50A 25A IC - Amperes I VCE - Volts 8 VCE - Volts 3.0 60 50 40 30 2.5 20 2.0 10 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 IXGH72N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 90 TJ = - 40ºC 80 70 60 VGE - Volts 125ºC 50 I C = 50A I G = 10mA 12 25ºC g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 160 10,000 140 Capacitance - PicoFarads Cies 120 IC - Amperes 1,000 Coes 100 Cres 60 TJ = 125ºC , RG = 2Ω dv / dt < 10V / ns 20 0 100 10 5 80 40 f = 1 MHz 0 100 10 15 20 25 30 35 40 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGH72N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff 4.5 Eon - --- 5.5 TJ = 125ºC , VGE = 15V 4.0 5.6 Eoff 2.4 VCE = 480V I C 4.0 = 100A 2.5 3.5 2.0 3.0 1.5 2.5 I C = 50A 1.0 Eoff - MilliJoules 3.0 4.0 1.6 3.2 1.2 2.4 TJ = 125ºC, 25ºC 0.8 1.6 0.4 0.8 2.0 0.5 1.5 0.0 0.0 1.0 2 3 4 5 6 7 8 9 10 11 12 13 14 20 15 30 40 50 RG - Ohms Eon ---- 4.8 4.0 3.2 I C = 100A 1.5 2.4 1.0 1.6 I C = 50A 0.5 0.0 35 45 55 65 75 85 95 105 115 Eon - MilliJoules 2.0 25 0.8 0.0 125 tf 170 TJ = 125ºC, VGE = 15V td(off) - - - - 160 350 150 300 I 140 C VCE = 480V 200 I 120 100 100 50 0 3 4 5 6 8 9 10 11 12 13 14 15 125 tf 140 60 90 TJ = 25ºC 40 80 20 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 70 100 td(off) - - - - 115 RG = 2Ω , VGE = 15V VCE = 480V t f - Nanoseconds t f - Nanoseconds 100 70 7 120 105 100 95 I C = 100A I C = 50A 80 60 85 75 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 65 125 t d(off) - Nanoseconds 80 60 150 160 t d(off) - Nanoseconds 110 50 = 50A Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 120 100 40 C 110 130 TJ = 125ºC 30 250 130 2 140 RG = 2Ω , VGE = 15V 20 = 100A 90 150 td(off) - - - - 120 400 RG - Ohms 180 140 450 VCE = 480V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 0.0 100 500 180 TJ - Degrees Centigrade tf 90 t d(off) - Nanoseconds VCE = 480V t f - Nanoseconds RG = 2Ω , VGE = 15V 2.5 80 190 5.6 Eoff 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 3.0 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature E off - MilliJoules 4.8 VCE = 480V 2.0 4.5 ---- Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 5.0 E on - MilliJoules E off - MilliJoules 2.8 6.0 IXGH72N60C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 60 C 50 = 100A 100 45 80 40 60 35 I C 30 = 50A 20 25 2 3 4 5 6 7 8 9 10 11 12 13 14 36 td(on) - - - - RG = 2Ω , VGE = 15V 34 VCE = 480V 80 32 70 30 TJ = 25ºC, 125ºC 60 28 50 26 40 24 30 22 20 20 10 15 20 30 40 50 60 70 80 90 t d(on) - Nanoseconds I 40 tr 90 VCE = 480V 120 38 100 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 140 110 18 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 35 tr 100 RG = 2Ω , VGE = 15V td(on) - - - - 34 33 VCE = 480V 90 80 32 31 I C = 100A 70 30 60 29 50 28 40 27 30 I C 26 = 50A 20 25 35 45 55 65 t d(on) - Nanoseconds t r - Nanoseconds 110 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60C3(8D)11-25-09-C