IXYS IXGH72N60C3

GenX3TM 600V IGBT
IXGH72N60C3
VCES
IC110
VCE(sat)
tfi (typ)
High-Speed PT IGBT for
40-100kHz Switching
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
IC110
ICM
TC = 25°C (Limited by Leads)
TC = 110°C (Chip Capability)
TC = 25°C, 1ms
75
72
360
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
50
500
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
ICM = 150
VCE ≤ VCES
A
PC
TC = 25°C
540
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G
= 250μA, VGE = 0V
600
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
V
5.5
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 50A, VGE = 15V
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
V
50 μA
1 mA
TJ = 125°C
2.10
1.65
E
G = Gate
E = Emitter
Tab
C
= Collector
Tab = Collector
Features
z
z
z
z
Optimized for Low Switching Losses
Square RBSOA
Avalanche Rated
International Standard Package
Advantages
z
z
IC
C
High Power Density
Low Gate Drive Requirement
Applications
Characteristic Values
Min.
Typ.
Max.
BVCES
600V
72A
2.5V
55ns
TO-247 AD
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
=
=
≤
=
±100
nA
2.50
V
V
z
z
z
z
z
z
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS99961B(11/09)
IXGH72N60C3
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
IC
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
= 50A, VCE = 10V, Note 1
33
Inductive Load, TJ = 25°°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 2Ω, Note 2
Inductive Load, TJ = 125°°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 2Ω, Note 2
RthJC
RthCK
Notes:
TO-247 (IXGH) Outline
55
S
4780
330
117
pF
pF
pF
174
33
72
nC
nC
nC
27
37
1.03
77
55
0.48
ns
ns
mJ
ns
ns
mJ
130
110
0.95
26
36
1.48
120
124
0.93
ns
ns
mJ
ns
ns
mJ
0.21
0.23 °C/W
°C/W
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitter
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Tab - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH72N60C3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
100
350
VGE = 15V
13V
11V
90
80
11V
9V
250
IC - Amperes
70
IC - Amperes
VGE = 15V
13V
300
60
50
7V
40
30
200
9V
150
100
20
7V
50
10
5V
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
2.8
0
2
4
6
VCE - Volts
12
14
1.3
100
VGE = 15V
13V
11V
90
80
VGE = 15V
1.2
VCE(sat) - Normalized
9V
70
IC - Amperes
10
Fig. 4. Dependence of VCE(sat) on
JunctionTemperature
Fig. 3. Output Characteristics @ T J = 125ºC
60
50
7V
40
30
1.1
I
= 100A
C
1.0
0.9
I
C
= 50A
0.8
0.7
20
I
C
= 25A
0.6
5V
10
0
0.5
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
25
50
VCE - Volts
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
5.0
TJ = 25ºC
4.5
90
80
4.0
3.5
C
TJ = 125ºC
25ºC
- 40ºC
70
= 100A
50A
25A
IC - Amperes
I
VCE - Volts
8
VCE - Volts
3.0
60
50
40
30
2.5
20
2.0
10
1.5
0
6
7
8
9
10
11
12
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
13
14
15
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
8.0
IXGH72N60C3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
90
TJ = - 40ºC
80
70
60
VGE - Volts
125ºC
50
I C = 50A
I G = 10mA
12
25ºC
g f s - Siemens
VCE = 300V
14
40
30
10
8
6
4
20
2
10
0
0
0
10
20
30
40
50
60
70
80
90
0
100
20
40
60
80
100
120
140
160
180
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
160
10,000
140
Capacitance - PicoFarads
Cies
120
IC - Amperes
1,000
Coes
100
Cres
60
TJ = 125ºC , RG = 2Ω
dv / dt < 10V / ns
20
0
100
10
5
80
40
f = 1 MHz
0
100
10
15
20
25
30
35
40
200
300
VCE - Volts
400
500
600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXGH72N60C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
5.0
Eoff
4.5
Eon -
---
5.5
TJ = 125ºC , VGE = 15V
4.0
5.6
Eoff
2.4
VCE = 480V
I
C
4.0
= 100A
2.5
3.5
2.0
3.0
1.5
2.5
I C = 50A
1.0
Eoff - MilliJoules
3.0
4.0
1.6
3.2
1.2
2.4
TJ = 125ºC, 25ºC
0.8
1.6
0.4
0.8
2.0
0.5
1.5
0.0
0.0
1.0
2
3
4
5
6
7
8
9
10
11
12
13
14
20
15
30
40
50
RG - Ohms
Eon
----
4.8
4.0
3.2
I C = 100A
1.5
2.4
1.0
1.6
I C = 50A
0.5
0.0
35
45
55
65
75
85
95
105
115
Eon - MilliJoules
2.0
25
0.8
0.0
125
tf
170
TJ = 125ºC, VGE = 15V
td(off) - - - -
160
350
150
300
I
140
C
VCE = 480V
200
I
120
100
100
50
0
3
4
5
6
8
9
10
11
12
13
14
15
125
tf
140
60
90
TJ = 25ºC
40
80
20
80
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
90
70
100
td(off) - - - -
115
RG = 2Ω , VGE = 15V
VCE = 480V
t f - Nanoseconds
t f - Nanoseconds
100
70
7
120
105
100
95
I C = 100A
I C = 50A
80
60
85
75
40
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
65
125
t d(off) - Nanoseconds
80
60
150
160
t d(off) - Nanoseconds
110
50
= 50A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
120
100
40
C
110
130
TJ = 125ºC
30
250
130
2
140
RG = 2Ω , VGE = 15V
20
= 100A
90
150
td(off) - - - -
120
400
RG - Ohms
180
140
450
VCE = 480V
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
160
0.0
100
500
180
TJ - Degrees Centigrade
tf
90
t d(off) - Nanoseconds
VCE = 480V
t f - Nanoseconds
RG = 2Ω , VGE = 15V
2.5
80
190
5.6
Eoff
70
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
3.5
3.0
60
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
E off - MilliJoules
4.8
VCE = 480V
2.0
4.5
----
Eon - MilliJoules
3.5
Eon
RG = 2Ω , VGE = 15V
5.0
E on - MilliJoules
E off - MilliJoules
2.8
6.0
IXGH72N60C3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
160
60
C
50
= 100A
100
45
80
40
60
35
I
C
30
= 50A
20
25
2
3
4
5
6
7
8
9
10
11
12
13
14
36
td(on) - - - -
RG = 2Ω , VGE = 15V
34
VCE = 480V
80
32
70
30
TJ = 25ºC, 125ºC
60
28
50
26
40
24
30
22
20
20
10
15
20
30
40
50
60
70
80
90
t d(on) - Nanoseconds
I
40
tr
90
VCE = 480V
120
38
100
55
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGE = 15V
t r - Nanoseconds
tr
140
110
18
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
120
35
tr
100
RG = 2Ω , VGE = 15V
td(on) - - - -
34
33
VCE = 480V
90
80
32
31
I C = 100A
70
30
60
29
50
28
40
27
30
I
C
26
= 50A
20
25
35
45
55
65
t d(on) - Nanoseconds
t r - Nanoseconds
110
75
85
95
105
115
25
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_72N60C3(8D)11-25-09-C