GenX3TM 600V IGBT IXGH72N60A3 IXGT72N60A3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 72 A ICM TC 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 150 A (RBSOA) Clamped inductive load @ ≤ 600V PC TC = 25°C 540 W = 25°C, 1ms G C TO-268 (IXGT) G -55 ... +150 °C 150 °C Tstg -55 ... +150 °C G = Gate E = Emitter 300 260 °C °C Features 1.13/10 Nm/lb.in. 6 4 g g TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 C (TAB) E TJM TJ 600V 72A 1.35V 250ns z z z E C (TAB) C = Collector TAB = Collector Optimized for low conduction losses Square RBSOA International standard packages Advantages z z High power density Low gate drive requirement Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 z z V z 5.0 V z 75 750 μA μA ±100 nA 1.35 V z TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99759B(07/08) IXGH72N60A3 IXGT72N60A3 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 48 IC = 60A, VCE = 10V, Note 1 TO-247 AD Outline 76 S 6600 pF 360 pF Cres 80 pF Qg 230 nC Cies Coes VCE = 25V, VGE = 0V, f = 1MHz 40 nC Qgc 78 nC td(on) 31 ns 34 ns 1.38 mJ 320 ns 250 ns Eoff 3.5 mJ td(on) 29 ns 32 ns Qge tri Eon td(off) tfi IC = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 480V, RG = 3Ω tri Inductive load, TJ = 125°C Eon IC = 50A, VGE = 15V td(off) tfi VCE = 480V, RG = 3Ω Eoff 2.6 mJ 510 ns 375 ns 6.5 mJ 0.23 RthJC RthCS 0.15 °C/W °C/W 1 2 3 Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH72N60A3 IXGT72N60A3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 100 VGE = 15V 13V 11V 300 270 240 9V 80 IC - Amperes IC - Amperes 330 VGE = 15V 13V 11V 60 7V 40 210 9V 180 150 120 90 7V 60 20 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 Fig. 3. Output Characteristics @ 125ºC 5 6 7 8 125 150 7.5 8.0 1.4 VGE = 15V 13V 11V 9V 80 60 7V 40 20 VGE = 15V 1.3 VCE(sat) - Normalized 100 IC - Amperes 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature 120 1.2 I C = 120A I C = 60A I C = 30A 1.1 1.0 0.9 0.8 5V 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.2 3.0 180 TJ = 25ºC 2.8 160 I 2.4 C 2.2 140 = 120A 60A 30A IC - Amperes 2.6 VCE - Volts 3 VCE - Volts VCE - Volts 2.0 1.8 1.6 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 1.4 40 1.2 20 1.0 0.8 0 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGH72N60A3 IXGT72N60A3 Fig. 7. Transconductance Fig. 8. Gate Charge 130 16 TJ = - 40ºC 120 100 VGE - Volts 80 125ºC 70 I C = 60A I G = 10 mA 12 25ºC 90 g f s - Siemens VCE = 300V 14 110 60 50 10 8 6 40 4 30 20 2 10 0 0 20 40 60 80 100 120 140 160 180 0 200 0 20 40 60 80 IC - Amperes 100 120 140 160 180 200 220 240 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 100,000 f = 1 MHz Cies 10,000 120 IC - Amperes Capacitance - PicoFarads 140 1,000 Coes 100 Cres 10 0 5 10 15 20 25 30 35 40 100 80 60 40 TJ = 125ºC 20 RG = 3Ω dV / dt < 10V / ns 0 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_72N60A3 (76)3-25-08-B IXGH72N60A3 IXGT72N60A3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 16 I 14 C = 100A 14 VCE = 480V 12 4.50 10 3.75 - MilliJoules 8 3.00 TJ = 25ºC 6 2.25 3 4 2 4 1.50 1 2 0.75 0 0 I C = 25A 0 0 5 10 15 20 25 30 20 35 30 40 50 RG - Ohms 18 Eon ---- C = 100A 8 3 I C = 50A - MilliJoules 4 on 10 5 E I 366 1 363 55 65 75 85 95 105 115 I C C = 50A 800 369 700 I 400 0 5 10 15 380 570 450 VCE = 480V 410 280 370 260 330 TJ = 25ºC 220 40 50 60 70 80 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 90 t f - Nanoseconds td(off) - - - - RG = 3Ω , VGE = 15V t d(off) - Nanoseconds 490 30 35 400 580 380 540 360 530 340 20 30 I C 500 = 25A, 50A, 100A 340 460 320 420 300 380 280 340 tf 260 290 240 250 100 220 td(off) - - - - RG = 3Ω , VGE = 15V VCE = 480V 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 300 260 220 125 t d(off) - Nanoseconds TJ = 125ºC 240 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 610 300 20 RG - Ohms 400 tf 600 = 25A 360 0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 320 C 500 TJ - Degrees Centigrade 360 1000 = 100A 900 I 372 2 45 1100 375 4 0 1200 VCE = 480V 378 2 I C = 25A 1300 381 6 2 td(off) - - - - TJ = 125ºC, VGE = 15V 384 5 12 35 0.00 100 t d(off) - Nanoseconds VCE = 480V 25 90 1400 tf 387 6 RG = 3Ω , VGE = 15V 14 80 390 t f - Nanoseconds Eoff 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 16 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 5.25 TJ = 125ºC 6 2 t f - Nanoseconds 6.00 RG = 3Ω , VGE = 15V on 4 I C = 50A - MilliJoules 5 VCE = 480V 8 7 6 --- TJ = 125ºC , VGE = 15V 10 16 ---- Eon E Eon - Eoff 8 on 12 6.75 Eoff E Eoff - MilliJoules 18 9 Eoff - MilliJoules 18 IXGH72N60A3 IXGT72N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 120 td(on) - - - - 110 TJ = 125ºC , VGE = 15V 80 70 70 60 I 50 C 60 = 50A I C = 25A 50 40 40 30 30 20 20 10 - Nanoseconds 80 70 d(on) C 90 = 100A 5 10 15 20 25 30 34 33 VCE = 480V 60 TJ = 125ºC 31 40 30 30 29 20 28 10 27 20 35 32 50 0 10 0 TJ = 25ºC RG = 3Ω , VGE = 15V t I td(on) - - - - 30 40 50 60 70 80 90 t d(on) - Nanoseconds VCE = 480V 90 35 tr 80 100 t r - Nanoseconds 100 t r - Nanoseconds 90 120 tr 110 26 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A 70 tr 60 RG = 3Ω , VGE = 15V td(on) - - - - 32 31 VCE = 480V 50 30 40 29 I C = 50A 30 t d(on) - Nanoseconds t r - Nanoseconds 80 28 I 20 C = 25A 27 10 25 35 45 55 65 75 85 95 105 115 26 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_72N60A3 (76)3-25-08-B