IXYH40N65B3 - IXYS Corporation

Advance Technical Information
XPTTM 650V IGBT
GenX3TM
IXYH40N65B3
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
Maximum Ratings
TO-247 (IXYH)
Extreme Light Punch Through
IGBT for 5-30kHz Switching
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
86
40
195
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
20
300
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
ICM = 80
@VCE  VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
5
μs
PC
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
300
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in
6
g
Weight
IC
= 250A, VGE = 0V
650
VGE(th)
IC
= 250A, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
Features
Optimized for Low 5-30kHz Switching
Square RBSOA

Avalanche Rated

Short Circuit Capability

International Standard Package

Advantages


VCE(sat)
IC

V


6.0
V
10
500
A
μA
100
nA
TJ = 150C
VCE = 0V, VGE = 20V
= 40A, VGE = 15V, Note 1
TJ = 150C
© 2014 IXYS CORPORATION, All Rights Reserved
C
= Collector
Tab = Collector
1.7
2.0
2.0
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Characteristic Values
Min.
Typ.
Max.
BVCES
IGES
Tab
E
G = Gate
E = Emitter

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
C

TJ
TJM
Tstg
TL
TSOLD
G
650V
40A
2.0V
73ns





Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
V
V
DS100629(9/14)
IXYH40N65B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
16
IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 40A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 10
Note 2
RthJC
RthCS
Notes:
TO-247 Outline
27
S
1880
123
43
pF
pF
pF
68
10
33
nC
nC
nC
20
37
0.80
140
73
0.70
ns
ns
mJ
ns
ns
mJ
1.25
20
37
1.60
176
174
1.15
ns
ns
mJ
ns
ns
mJ
0.21
0.50 °C/W
°C/W
1
2
P
3
e
Terminals: 1 - Gate
3 - Emitted
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYH40N65B3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
80
280
VGE = 15V
13V
12V
11V
70
60
VGE = 15V
240
14V
200
10V
13V
40
I C (A)
I C (A)
50
9V
160
12V
120
11V
30
8V
9V
40
10
7V
0
0
0.5
1
1.5
2
2.5
8V
7V
0
3
0
5
10
15
20
25
VCE (V)
VCE (V)
Fig. 3. Output Characteristics @ TJ = 150ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
80
2.0
VGE = 15V
13V
12V
11V
60
30
VGE = 15V
1.8
I C = 80A
VCE(sat) - Normalized
70
10V
50
I C (A)
10V
80
20
9V
40
30
8V
1.6
1.4
I C = 40A
1.2
1.0
20
7V
0.8
10
I C = 20A
6V
0.6
0
0
0.5
1
1.5
2
2.5
3
-50
3.5
-25
0
25
75
100
125
150
TJ (ºC)
VCE (V)
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6
50
Fig. 6. Input Admittance
90
TJ = 25ºC
80
5
70
I C (A)
V CE (V)
60
4
I C = 80A
50
40
3
TJ = 150ºC
25ºC
30
40A
- 40ºC
20
2
10
20A
1
0
7
8
9
10
11
12
VGE - (V)
© 2014 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
VGE (V)
8
9
10
175
IXYH40N65B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
40
16
TJ = - 40ºC
VCE = 325V
14
30
25ºC
12
25
150ºC
10
VGE (V)
g f s (S)
35
20
I C = 40A
I G = 10mA
8
15
6
10
4
5
2
0
0
0
10
20
30
40
50
60
70
80
90
0
100
10
20
30
50
60
70
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
90
10,000
f = 1 MHz
80
Cies
70
60
1,000
I C (A)
Capacitance (pF)
40
QG (nC)
I C (A)
Coes
100
50
40
30
Cres
20
TJ = 150ºC
10
RG = 10Ω
dv / dt < 10V / ns
10
0
0
5
10
15
20
25
30
35
40
100
200
300
400
VCE (V)
500
600
700
VCE (V)
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
Fig. 11. Forward-Bias Safe Operating Area
1
1000
VCE(sat) Limit
100
10
I D (A)
100µs
1
1ms
0.01
DC
TC = 25ºC
Single Pulse
0.01
1
0.1
10ms
TJ = 175ºC
0.1
Z (th)JC (ºC / W)
25µs
10
100
1000
VDS (V)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
IXYH40N65B3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
3.2
Eoff
2.8
Eon -
---
7
3.2
6
2.8
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Eoff
VCE = 400V
3.0
1.6
3
1.2
2
2.5
1.6
2.0
TJ = 150ºC
1.2
1.5
0.8
1.0
TJ = 25ºC
I C = 30A
0.8
0.4
10
15
20
25
30
35
40
45
50
1
0.4
0
0.0
0.5
0.0
15
55
20
25
30
35
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
VCE = 400V
1.4
2.5
1.2
2.0
1.0
1.5
100
160
280
140
240
160
80
120
10
15
20
25
30
tfi
200
180
td(off) - - - -
260
200
240
180
tfi
120
160
100
140
TJ = 25ºC
120
60
100
40
80
35
50
55
40
45
I C (A)
© 2014 IXYS CORPORATION, All Rights Reserved
50
55
240
220
60
200
140
180
I C = 30A
120
160
I C = 60A
100
140
80
120
60
100
40
25
50
75
100
TJ (ºC)
125
80
150
t d(off) (ns)
180
t f i (ns)
TJ = 150ºC
30
td(off) - - - -
VCE = 400V
160
200
t d(off) (ns)
t f i (ns)
220
140
25
45
RG = 10Ω , VGE = 15V
VCE = 400V
20
40
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
RG = 10Ω , VGE = 15V
15
35
RG (Ω)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
80
200
I C = 60A
TJ (ºC)
160
320
I C = 30A
100
0.0
150
125
400
360
180
0.5
0.4
440
VCE = 400V
1.0
0.6
220
60
td(off) - - - -
120
I C = 30A
75
55
t d(off) (ns)
3.0
E on (mJ)
1.6
50
50
TJ = 150ºC, VGE = 15V
200
3.5
0.8
tfi
220
4.0
I C = 60A
1.8
25
45
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
240
4.5
----
RG = 10Ω , VGE = 15V
2.0
Eoff (mJ)
Eon
5.0
t f i (ns)
2.2
40
I C (A)
RG (Ω)
2.4
E on (mJ)
4
E off (mJ)
2.0
I C = 60A
Eon (mJ)
E off (mJ)
3.5
VCE = 400V
2.4
5
2.0
----
RG = 10Ω , VGE = 15V
TJ = 150ºC , VGE = 15V
2.4
Eon
4.0
IXYH40N65B3
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
180
tri
160
100
100
td(on) - - - -
tri
90
TJ = 150ºC, VGE = 15V
140
td(on) - - - -
60
40
40
30
20
20
0
10
10
15
20
25
30
35
40
45
50
25
40
20
20
15
t r i (ns)
50
I C = 30A
60
0
10
15
55
RG (Ω)
t d(on) (ns)
80
60
TJ = 25ºC, 150ºC
t d(on) (ns)
100
30
VCE = 400V
70
I C = 60A
35
RG = 10Ω , VGE = 15V
80
80
VCE = 400V
120
t r i (ns)
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
20
25
30
35
40
45
50
55
60
I C (A)
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
160
32
tri
140
td(on) - - - -
30
RG = 10Ω , VGE = 15V
120
28
VCE = 400V
26
I C = 60A
80
24
60
22
40
t d(on) (ns)
t r i (ns)
100
20
I C = 30A
20
18
0
25
50
75
100
125
16
150
TJ (ºC)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_40N65B3D1(51) 9-11-14