PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -10 to +60 -20 to +70 Unit V °C °C ■ Electrical and optical characteristics (without scintillator, Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Symbol λ λp S ID Ct Condition λ=500 nm VR=10 mV VR=0 V, f=10 kHz Min. - Typ. 190 to 1000 720 0.26 2 950 Max. 50 - Unit nm nm A/W pA pF ■ X-ray sensitivity (reference value, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm) X-ray tube voltage 120 kV Typ. 52 Unit nA Note) Depends on equipment and measurement conditions. Handling precautions Avoid storing or using S8559 at high humidity because CsI scintillator has deliquescence. 1 Si photodiode ■ Dark current vs. reverse voltage ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 1 nA TERMINAL CAPACITANCE 100 pA DARK CURRENT (Typ. Ta=25 ˚C) 100 nF 10 pA 1 pA 100 fA 0.01 0.1 S8559 1 10 REVERSE VOLTAGE (V) 10 nF 1 nF 100 pF 0.1 1 10 REVERSE VOLTAGE (V) KSPDB0152EA KSPDB0153EA ■ Dimensional outline (unit: mm) CsI (TI) 7.9 8.9 ± 0.1 10.1 ± 0.1 0.3 2.0 ± 0.1 CsI (TI) 8.9 t=3.0 (10.5) 2.85 4.85 PHOTOSENSITIVE SURFACE 0.5 LEAD 9.2 ± 0.3 7.4 ± 0.2 8.0 ± 0.3 ANODE TERMINAL MARK KSPDA0145EA Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KSPD1051E03 Jun. 2011 DN