Startup of new opto-semiconductor post-process production plant As the mass production factory for the post-process assembly of opto-semiconductors handled by the Solid State Division of Hamamatsu Photonics, the Shingai Factory (Shingai-cho, Minami-ku, Hamamatsu City, Japan) has started operation from August 1, 2011. The Solid State Division of Hamamatsu Photonics manufactures a wide variety of products most of which are in small quantities. Since this requires a large number of different equipment and machines for production, the Mitsue Factory (Mitsue, Iwata City, Japan) that handles postprocess assembly became hard-pressed for space. This led to acquisition and operation of the Shingai Factory in order to expand production capability. The Solid State Division must meet customer demands for low-cost products. The new Shingai Factory was rated as fully capable of handling mass production needs for assembly of low-cost products to satisfy customer price needs, and so mass production of some products Shingai factory will be shifted there from the Mitsue Factory. Products shifting over to the new plant will include photo IC and LED for general electronic equipment and office machines, as well as Si photodiodes for X-ray non-destructive inspection, rotary encoders, and FA (factory automation). The annual production volume for these opto-semiconductor devices is predicted to reach some 20 million units for the first year produced by a workforce of about 60 employees. The Mitsue Factory, on the other hand, will serve mainly as an assembly plant for high-variety, low-volume, high-precision, high-density, value-added products such as receiver devices for optical communication, image sensors, and Si photodiodes for X-ray CT scanners. Work on developing new production technologies including assembly technology, production process design, and production equipment design is also being carried out at the same time. The Shingai Factory is also scheduled to start production in the summer of 2012 of transmitter/receiver devices for MOST (Media Oriented Systems Transport) which is the high-speed, in-vehicle LAN standards employed in European luxury cars. The MOST standards use plastic optical fibers that offer light weight and high-speed data transmission with a higher resistance to noise compared to metal wire harnesses. This will help vehicles use more information and reduce the weight of components. The MOST standards are expected to spread to many car models in future years and likely lead to highly expanded sales, so we are expected to ship some 50 million units a year after several years. Hamamatsu Photonics (China) Co., Ltd. established to meet growing domestic product demand in China To cope with rapidly expanding product demand within the People’s Republic of China (hereafter “China”), Hamamatsu Photonics founded the Chinese sales company called Hamamatsu Photonics (China) Co., Ltd. (totally funded by Hamamatsu) on July 20, 2011 to expand sales and provide full technical services to customers. After requests from China for technical support, Hamamatsu Photonics decided to start a business in China in 1988 and founded Beijing Hamamatsu Photon Techniques Inc. (hereafter, BeijingHamamatsu) jointly with Beijing Nuclear Instrument Factory (BNIF). Beijing-Hamamatsu serves as a production and sales base of photomultiplier tubes, etc. with current annual sales of 130 million yuan in the domestic Chinese market. On the other hand, direct business between Hamamatsu Photonics and China has resulted in annual sales of approximately 230 million yuan, and demand in the Chinese market continues to expand year by year. The main push behind this is a trend where Building where Hamamatsu Photonics (China) Co., Ltd is located customers in the US and Europe have been establishing their production bases in China over the last several years and are now starting to set up low-cost product development operations to meet domestic demand in China, along with the fact that Chinese companies are also beginning to grow. This situation has created the need for sales and technical support to meet customer requirements and led to our establishing a sales subsidiary inside China. We also have future plans to set up a product development system to respond to product needs in China. Along with sales of Hamamatsu Photonics products inside China, this new sales company will also export products developed at Beijing-Hamamatsu (our local subsidiary manufacturing company) to markets throughout Asia. Projected sales for the first year are 350 million yuan for Hamamatsu Photonics products and 100 million yuan for Beijing-Hamamatsu products, so an annual total sales of 450 million yuan is targeted. We plan to increase sales by about 20% a year, and after 5 years are expected to reach 780 million yuan. To achieve these sales figures we plan to open a Shanghai branch of our new sales company in June, 2012 and plan to also open company branches in Chengdu, Chongqing and Shaanxi in the future. Sales people at Beijing-Hamamatsu and employees at the Beijing office of Hamamatsu Photonics will be shifted to the new sales company and, along with new employees, will be the start of a 40member organization that is scheduled to reach 70 to 80 members about 3 years from now. 1 Opto-semiconductor Infrared detector Thermopile detector Please contact us for the release schedule of these products. Sensors suitable for energy saving and security devices Using silicon-based materials, these sensors are designed to deliver high sensitivity and high reliability. To meet diverse application needs, these sensors are available in a wide product lineup due to MEMS technology, including single-element type, dual-element type, and array type. Linear and area types provide high added value and offer low cost due to CMOS circuit technology. Left: Single-element type T11262-01 Second from left: Dual type T11722-01 Second from right: Linear type T11263-16, T11263-32 (identical in shape) Right: Area type T11264-08 Single-element type T11262-01 Dual-element type T11722-01 Linear array T11263-16/-32, Area array T11264-08 The T11262-01 is a high-sensitivity thermopile detector suitable for gas analysis applications. It can be used to detect various kinds of gases by attaching an external band-pass filter. The T11722-01 is a dual-element type thermopile detector designed to detect CO2 concentrations with high accuracy. Hamamatsu provides a 16-element linear array, 32-element linear array, and 8 x 8 element area array. Since a preamp is mounted in the same package, external noise can be reduced and the latter stage circuit configuration simplified. Features Features Features High sensitivity in 3 to 5 µm spectral band Compact package (TO-18) High-speed response Resistance has small temperature dependence. Applications Gas analysis 2 Evaluation module for array type Detects CO2 concentrations with high accuracy Simultaneously detects two wavelengths using two sensor elements for CO 2 absorption wavelength (4.3 µm) and reference wavelength (3.9 µm) Applications CO 2 concentration detection (automatic room ventilation, exhaust gas inspection, photosynthesis control in agriculture, etc.) T11263-16: 16 elements T11263-32: 32 elements T11264-08: 8 x 8 elements Non-cooled Compact package Wide spectral response range (band-pass filter is used to select specific wavelength) Applications Temperature profile detection on FA line (food production line, etc.) Area temperature detection Human body position detection Opto-semiconductor Infrared detector InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in 5 µm spectral band TE-cooled infrared detector with no liquid nitrogen required Features High-speed response High sensitivity High reliability Compact package (TO-8, two-stage TE-cooled type) Environment-friendly due to use of InAsSb Can be assembled in a module with QCL (quantum cascade laser) Applications Gas analysis Radiation thermometers Thermal imaging The P11120-201 is an infrared detector that provides high sensitivity in the 5 µm spectral band due to our unique crystal growth technology. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability. Typical applications include gas analysis such as CO2, SOx, CO and NOx. Unlike the P11120-901 metal dewar type detector, the P11120-201 is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen. Parameter Symbol Spectral response range λ Peak sensitivity wavelength Photosensitivity Condition Min. Typ. Max. Unit Td=-30 °C - 1.0 to 5.9 - µm λp Td=-30 °C 4.0 4.9 - µm S λ=λp, Td=-30 °C 0.8 1.6 - A/W 10 13 - Ω - cm·Hz1/2/W Shunt resistance VR=10 mV Rsh Td=-30 °C Detectivity D* Noise equivalent power Remote sensing FTIR Spectrophotometry (λp, 600, 1) Td=-30 °C NEP λ=λp, Td=-30 °C 3.5 × 109 5.0 × 109 1.8 × 10-11 2.5 × 10-11 W/Hz1/2 - Infrared detector InGaAs PIN photodiode G11777-003P Surface mount type COB (chip on board) package Please contact us for the release schedule of these products. Features Low noise High sensitivity High-speed response Photosensitive area: φ0.3 mm Surface mount type Small size COB package Low cost Compatible with lead-free reflow soldering Applications Compact measuring devices Gas analysis Light level monitors The G11777-003P is a small, near- infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G8376-03). In addition to optical communication, other applications include analysis and measurement utilizing near-infrared light. Parameter Symbol Spectral response range Peak sensitivity wavelength Condition Min. Typ. Max. Unit λ - 0.9 to 1.7 - µm λp - 1.55 - µm 0.75 0.95 - A/W - 0.1 0.8 nA Photosensitivity S λ=λp Dark current ID VR=5 V 3 Opto-semiconductor Visible light sensor Si APD S11670-01 Small Si APD with 635 nm band-pass filter for optical rangefinders Please contact us for the release schedule of these products. Features 635 nm band-pass filter attached Photosensitive area: φ0.1 mm Small package: 2.0 × 1.3 × 0.8 mm Low-bias operation (breakdown voltage: 100 V max.) High-speed response (cutoff frequency: 1 GHz min.) Applications Optical rangefinders Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 The S11670-01 is a Si APD with a band-pass filter for 635 nm light sources which are widely used for optical rangefinders. The S11670-01 uses a subminiature surface mount package and operates at a low bias voltage, making it suitable for applications such as portable distance meters. 60 40 20 0 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KAPDB0203EA Image sensor CCD linear image sensor S11151-2048 Front-illuminated CCD linear image sensor with high UV sensitivity Features Low dark current Low image lag High sensitivity in UV (spectral response range: 200 to 1000 nm) Pixel size: 14 x 200 µm 2048 pixels Applications Parameter Specification Unit Number of pixels 2048 pixels Pixel pitch 14 µm Pixel height 200 µm Photosensitive area length 28.672 mm Data rate 2 max. MHz Spectral response (without window, typical example) Spectrophotometry, etc. (Ta=25 °C) 100 Quantum efficiency (%) 80 60 40 20 The S11151-2048 is a front-illuminated CCD linear image sensor with high sensitivity and high resistance to UV light. It is suitable for spectrophotometry. 0 200 400 600 800 Wavelength (nm) 4 1000 1200 KMPDB0315EB Opto-semiconductor Image sensor CMOS linear image sensor S11106, S11107 Compact size and high cost-performance Please contact us for the release schedule of these products. Features Resin-sealed type, surface mount package: 2.4 x 9.1 x 1.6t mm Pixel size S11106: 63.5 x 63.5 µm (400 dpi), 128 pixels S11107: 127 x 127 µm (200 dpi), 64 pixels Video data rate: 10 MHz max. 3 V or 5 V single power supply operation Electronic shutter function Low current consumption Applications Position detection Object measurement Parameter The S11106 and S11107 are resin-sealed CMOS linear image sensors that deliver a video data rate of 10 MHz and consume a low amount of current. Rotary encoders Image reading S11106 S11107 Number of pixels 128 64 - Pixel pitch 63.5 127 µm Pixel height 63.5 127 Photosensitive area length Spectral response range Unit µm mm 400 to 1000 nm Image sensor CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel Please contact us for the release schedule of these products. Features High sensitivity: 160 V/(lx·s) Electronic shutter function 5 V single power supply operation Video data rate: 10 MHz max. Conversion efficiency: 13 µV/eHigh UV sensitivity Applications Position detection Image reading Encoders Barcode readers Spectrophotometry Parameter The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. Compared to the previous types, the S11638 offers high sensitivity and high resistance to UV light. Specification Unit 2048 pixels Pixel pitch 14 µm Pixel height 42 µm 28.672 mm 200 to 1000 nm Number of pixels Photosensitive area length Spectral response range 5 Opto-semiconductor Image sensor CMOS area image sensor S11661, S11662 APS (active pixel sensor) type with high near-infrared sensitivity Please contact us for the release schedule of these products. Features S11661: 1280 x 1024 pixels S11662: 640 x 480 pixels Pixel size: 7.4 x 7.4 µm Rolling/global shutter readout 3.3 V single power supply operation High-speed partial readout function Applications Spectral response (typical example) Photosensitivity (V/J) Security (infrared camera, finger vein certification) Position and shape recognition of infrared light spot Left: S11661, Right: S11662 (Ta=25 °C) 2.5 × 1013 S11661, S11662 2 × 1013 1.5 × 1013 Previous product 1 × 1013 5 × 1012 The S11661 and S11662 are APS (active pixel sensor) type CMOS area image sensors with high sensitivity in the nearinfrared region. The S11661 is an SXGA format type (1280 x 1024 pixels), and the S11662 is a VGA format type (640 x 480 pixels). Both types include a timing generator, a bias generator and an A/D converter, and offer digital input/output for easy handling. 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0363EA Image sensor InGaAs linear image sensor G12230-512DB Hybrid-structure linear image sensor (two 256-pixel photodiode arrays with different spectral response ranges) Please contact us for the release schedule of these products. Features Spectral response range: 0.95 to 2.2 µm Two 256-pixel photodiode arrays with spectral response ranges of 0.95 to 1.7 µm and 1.4 to 2.2 µm Low dark current Spectral response (typical example) Low linearity error (Ta=25 °C) Pixel height: 250 µm, 1.4 pixel pitch: 25 µm Applications Spectrophotometry Analysis and measurement Photosensitivity (A/W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.8 1 1.2 1.4 1.6 1.8 2 Wavelength ( m) The G12230-512DB is a hybrid-structure linear image sensor having two 256-pixel back-illuminated InGaAs photodiode arrays with spectral response ranges of 0.95 to 1.7 µm and 1.4 to 2.2 µm, which are bumpbonded to a single CMOS readout circuit. This new structure allows high S/N over a broad spectral response range from 0.95 to 2.2 µm. 6 Parameter Spectral response range Conversion efficiency Photoresponse nonuniformity Data rate 2.2 2.4 KMIRB0065EA Symbol Min. Typ. Max. λ - 0.95 to 2.2 - Unit µm CE - 16 - nV/e- PRNU - ±10 - % f - 0.5 1 MHz Opto-semiconductor Image sensor Si/InGaAs linear image sensor G12231-1024DF Features Spectral response range: 0.4 to 1.7 µm Si linear image sensor (768 pixels, 25 µm pitch) + InGaAs linear image sensor (256 pixels, 25 µm pitch) Pixel height: 500 µm Continuous spectrum acquisition Spectral response (typical example) Optimal S/N at detection (Ta=25 °C) wavelength 1.0 Applications Spectrophotometry 0.8 Photosensitivity (A/W) Silicon and InGaAs hybrid linear image sensor Please contact us for the release schedule of these products. 0.6 0.4 0.2 0 0.4 The G12231-1024DF is a unique image sensor that connects a back-illuminated InGaAs photodiode array to a CMOS image sensor by flip chip bonding to achieve a wide spectral response range. 0.6 0.8 1.0 1.2 1.4 Wavelength ( m) Parameter 1.6 1.8 KMIRB0064EA Min. Typ. Max. Spectral response range - 0.4 to 1.7 - Unit µm Number of pixels - 1024 - pixels Image sensor InGaAs area image sensor G12242-0707W Near-infrared area image sensor in TO-8 package Features Please contact us for the release schedule of these products. Spectral response range: 0.95 to 1.7 µm 128 x 128 pixels (pixel pitch: 20 µm) High sensitivity Compact package (TO-8, two-stage TE-cooled type) Internal timing generator Applications Non-destructive inspection Near-infrared image monitors The G12242-0707W is a high-resolution, near-infrared area image sensor that consists of a back-illuminated InGaAs photodiode array bump-connected to a CMOS readout circuit (ROIC: readout integrated circuit).The internal timing generator allows analog video output and AD-TRIG output to be obtained by simply inputting an external master clock and master start pulses. Parameter Number of pixels Symbol Specification Unit - 128 x 128 pixels Pixel pitch - 20 to 25 µm Spectral response range λ 0.95 to 1.7 µm 7 Opto-semiconductor Image sensor InGaAs area image sensor G11097 series Image sensors with 64 x 64 pixels or 128 x 128 pixels developed for two-dimensional infrared imaging Features Spectral response range: 0.95 to 1.7 µm 1.12 to 1.9 µm also available (custom product) G11097-0606S: 64 x 64 pixels G11097-0707S: 128 x 128 pixels Excellent linearity by offset compensation Simultaneous charge integration for all pixels (global shutter mode) Compact package (G11097-0606S: TO-8, one-stage TE-cooled type) Applications Thermal imaging Laser beam profiler Non-destructive inspection Parameter Left: G11097-0606S, Right: G11097-0707S The G11097 series has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes for two-dimensional infrared imaging. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily obtained by just supplying master clock and master start pulses from external digital inputs. Symbol G11097-0606S G11097-0707S Pixel size - Number of pixels - Unit 50 x 50 µm 128 x 128 64 x 64 pixels Spectral response range λ 0.95 to 1.7 Peak sensitivity wavelength λp 1.55 µm Data rate fv 5 MHz Frame rate*1 - 1025 µm 279 fps *1: Integration time=1 µs Circuit for image sensor InGaAs multichannel detector head C11512 series Features Can be used in combination with G11097 series CameraLink interface Compact size Applications Thermal imaging Laser beam profiler Non-destructive inspection C11512 The C11512 and C11512-01 InGaAs multichannel detector heads are designed for use with the G11097-0606S and G11097-0707S InGaAs area image sensors (sold separately) to perform various near-infrared imaging tasks. Parameter C11512 C11512-01 Unit Applicable InGaAs area image sensor G11097-0606S G11097-0707S - Interface CameraLink (Base Configuration) - 4.75 to 5.25 V 90 (H) x 100 (W) mm Power supply Dimensions 8 Opto-semiconductor X-ray detector Flat panel sensor C11700DK-40, C11701DK-40 Flat panel sensor with large photosensitive area yet high-speed response for X-ray 3D imaging Features Please contact us for the release schedule of these products. Large photosensitive area yet high-speed response High sensitivity High resolution Applications 3D imaging Left: C11700DK-40, Right: C11701DK-40 Parameter The C11700DK-40 and C11701DK-40 are flat panel sensors for X-ray imaging, specially developed for 3D-CT applications. They deliver high-speed response despite the large photosensitive area, and have multiple scan modes. C11700DK-40 Pixel size C11701DK-40 Unit 240 x 240 Photosensitive area (H x V) 161 x 159 Frame rate*2 40 Sensitivity*2 Scintillator µm 265 x 215 mm 30 frames/s 12000 LSB/mR Directly deposited CsI - *2: Fast mode Radiation detector Radiation detector module C12137 Compact, high-sensitivity radiation detector module with high accuracy Features Gamma-ray energy discrimination Module design for easy assembly into equipment Compact and lightweight Applications Environmental monitoring and mapping Screening such as receiving/shipping inspection at manufacturing site Assembly into portable, high-sensitivity detector Parameter Scintillator Counting efficiency Energy range Energy resolution Measurement range Connection example to PC (PC is not included with the product) The C12137 is a gamma-ray detector module containing a scintillator and an MPPC (multi-pixel photon counter). The scintillator converts incident gamma rays into visible light, and the MPPC detects the converted light even at low light levels, allowing highly accurate measurement of low energy gamma rays. The signal processing circuit and A/D converter necessary for measurement are also installed in the compact case equipped with a USB interface that connects to a PC (Windows® 7/XP*3) for radiation measurement. Measurement error Condition 137 Cs*4, 0.01 µSv/h 137 Cs*4, 662 keV Specification CsI(Tl), 13 x 13 x 20 mm 20 cpm min. 30 keV to 2 MeV 8% 0.01 µSv/h to 20 µSv/h Excluding attenuation by shield ±20 % object and counting fluctuations Sampling time 1 to 60 seconds Interface USB 2.0 (Full Speed) compatible with Windows® 7 (32-bit, 64-bit)/ XP (32-bit)*3 Power supply USB bus power *3: Windows is either registered trademark or trademark of Microsoft Corporation in the United States and other countries. *4: Cesium 137 9 Electron tube product Photodetector Photomultiplier tube module H11706 Module with internal shutter for protection against excitation light Please contact us for the release schedule of these products. Features Internal shutter for protection against excessive light pulses Switching ratio: 102 to 103 Applications Low-light-level measurement immediately after input of excessive light pulse Type no. H11706-110 The H11706 is a current output type module containing a metal package photomultiplier tube. The shutter operates by inputting an external signal. Shutter speed is 1 µs to 10 ms. Spectral response 230 to 700 nm H11706-01 230 to 870 nm H11706-20 230 to 920 nm H11706P-110 230 to 700 nm H11706P-01 230 to 870 nm Feature Super-bialkali photocathode, visible range, general type Multialkali photocathode, visible to NIR range, general type Extended red multialkali photocathode Super-bialkali photocathode, photon counting type Multialkali photocathode, photon counting type Photodetector Photomultiplier tube module H12056 Module with internal shutter for protection against excessive light Features Internal shutter for protection against excessive light Switching ratio: 102 to 103 Applications Low-light-level measurement Type no. The H12056 is a current output type module containing a metal package photomultiplier tube. The shutter operates by inputting an external signal. Shutter speed is 10 ms to DC. 10 Spectral response H12056-110 230 to 700 nm H12056-01 230 to 870 nm H12056-20 230 to 920 nm H12056P-110 230 to 700 nm H12056P-01 230 to 870 nm Feature Super-bialkali photocathode, Visible range, General type Multialkali photocathode, Visible to NIR range, General type Extended red multialkali photocathode Super-bialkali photocathode, Photon counting type Multialkali photocathode, Photon counting type Electron tube product Photodetector Photon counting head H11890 series Makes measurements by USB connection only Features Photon counting head Applications Low-light-level detection such as spectroscopic analysis and laboratory testing Parameter H11890-110 Input voltage Max. input current Spectral response range 230 to 700 Peak sensitivity wavelength The H11890 is a compact module integrating a metal package photomultiplier tube, high-voltage power supply, voltage divider circuit, photon counting circuit, counter circuit, and USB interface. 4.9 x 105 *1 (typ.) 50 Unit - 50 mA 230 to 700 230 to 870 6.1 x 105 5.0 x 106 nm nm mm φ8 Count linearity Dark count H11890-01 400 Effective area Count sensitivity at 400 nm (typ.) *2 H11890-210 USB Bus Power 3.6 x 50 105 s-1·pW-1 s-1 600 s-1 *1: Random pulse, at 10 % count loss. *2: After 30 minutes storage in darkness at plateau voltage. Photodetector Cooling module H11836 Reduced dark current and dark count by photocathode cooling Features Internal voltage-divider circuit, amplifier and high-voltage power supply Applications Biomedical fluorescence detection Laser scanning detection Low-light emission measurement The H11836 is a photon counting head with a thermoelectric cooler that cools the photocathode of the 16-channel linear multianode photomultiplier tube. A thermistor is also included in the cooled section to monitor the photocathode temperature as needed. 11 Electron tube product Photodetector Multianode photomultiplier tube assembly H7546B-300, H8711-300 Multianode (8 x 8): H7546B-300 Multianode (4 x 4): H8711-300 High quantum efficiency (in green-light region) These assemblies use a 1-inch square metal package photomultiplier tube with metal channel dynodes. They offer higher sensitivity in the green region than ordinary bialkali photocathodes, yet limit the dark count to a low level equal to that of ordinary bialkali photocathodes. Features Photocathode with enhanced green sensitivity: Quantum efficiency is 11 % or more (at 550 nm) Spectral response range: 300 nm to 700 nm High-speed response Applications Academic research Medical equipment Spectroscopic analysis SEM Confocal microscope Semiconductor inspection system Neutron structure analysis 12 g H7546B-300 Parameter Min. Typ. Max. Unit Cathode luminous (2856K) 120 160 - µA/lm - 80 - A/lm 12 14 - - Gain - 5.0 x 105 - - Anode dark current (/ch) *1 - 0.2 2 nA Uniformity between each anode - 1:2.5 1:4 - Pulse linearity (/ch) *2 - 0.3 - mA Parameter Min. Typ. Max. Unit Cathode luminous (2856K) 120 160 - µA/lm Anode luminous (2856K) Blue sensitivity index (CS 5-58) g H8711-300 Anode luminous (2856K) - 400 - A/lm 12 14 - - Gain - 2.5 x 106 - - Anode dark current (/ch) *1 - 0.6 2 nA Uniformity between each anode - 1:2 1:3 - Pulse linearity (/ch) *2 - 1 - mA Blue sensitivity index (CS 5-58) *1: After 30 minutes storage in darkness. *2: ±5 % deviation. Electron tube product Photodetector Cooled side-on photomultiplier tube R11715/-01 Cooled type with low-noise bialkali photocathode Features Reduced dark current by photocathode cooling Applications Parameter Specification Analytical equipment Spectral response range Peak sensitivity wavelength Medical equipment Unit 185 to 710 nm 410 nm 8 x 24 mm Effective area Cooling characteristic 50 200 Photocathode temperature (°C) The R11715 is a cooled type 28 mm (1-1/8 inch) side-on photomultiplier tube with an integrated top plate, shield plate and cathode. Suffix No. "-01" indicates it has a Peltier cooler. 180 40 160 35 140 30 120 25 100 20 80 15 60 10 40 5 20 0 0 Dark count (s-1) Photocathode temperature (°C) Dark count (s-1) 45 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 Time (s) Photodetector High-speed photomultiplier tube R11919 New electrode dynode design achieving 270 ps TTS Please contact us for the release schedule of these products. Features Fast response time characteristics Applications High energy physics TOF-PET Scintillation counting Parameter Spectral response range The R11919 is a 38 mm (1.5 inch) head-on photomultiplier tube achieving high-speed response (Tr: 1.7 ns, T.T.S.: 270 ps). Specification Unit 300 to 650 nm Peak sensitivity wavelength 420 nm Effective area φ34 mm Parameter Min. Typ. Max. Unit Cathode luminous (2856 K) 70 95 - µA/lm Anode luminous (2856 K) - 100 - A/lm Blue sensitivity index (CS 5-58) 9 11 - - Gain - 1.0 x 106 - - Anode dark current *1 - 50 300 nA Time response (Rise time) - 1.7 - ns Time response (Transit time) - 19 - ns Time response (Transit time spread) - 270 - ps *1: After 30 minutes storage in darkness. 13 Electron tube product Accessory for photomultiplier tube D-Type Socket Assembly E10679/-50 For metal package PMT R9880U Features Compact Cable output and on-board (pin output) types available Applications Voltage divider for metal package PMT R9880U Parameter E10679 Grounded electrode / Supply voltage polarity These socket assemblies have an internal voltage-divider circuit for the R9880U metal package photomultiplier tube. The E10679 is a cable output type, and the E10679-50 is a pin output type. E10679-50 Unit Anode / Negative - Max. supply voltage between power supply terminals 1100 V Max. voltage divider current *1 0.32 mA Power consumption *1 350 mW Total voltage divider resistance 3.46 MΩ 16 µA Max. linear output in DC mode *1 Signal output DC / Pulse Weight 15 4.8 g *1: at max. power supply voltage. Accessory for photomultiplier tube Compact high-voltage power supply C10940 series On-board mounting type Features Compact and lightweight High reliability High conversion efficiency Applications Portable photodetector Remote control photodetector Parameter +5±0.5 V Input current (typ.) 60 (no load), 230 (full load) mA -10 to -1200 +10 to +1200 Specification guaranteed output voltage range -200 to -1200 +200 to +1200 V V Output current (max.) 0.6 mA Line regulation (typ.) *1 ±0.02 % Load regulation (typ.) *2 ±0.01 % 50 mV ±0.01 %/°C 8.5 g Ripple / Noise (p-p) (typ.) *3 14 Unit Input voltage range Variable output range The C10940 is a compact, cubic type high-voltage power supply with output of +1200 V/-1200 V and 0.6 mA. -R2 type is RS-485 digital control. C10940-03 C10940-53 C10940-03-R2 C10940-53-R2 Temperature coefficient (typ.) *3 Weight *1: At maximum output voltage, at maximum output current, against ±0.5 V input change. *2: Against 0 % to 100 % load change. *3: At maximum output voltage, at maximum output current. Electron tube product Point of care test Immunochromato reader C10066-10 Ideal for R&D of immunochromatographic reagents and quality control Features High-sensitivity measurement with high repeatability Measures red-based and blue-based color lines with a single unit Compatible with various reagent housing configurations Applications Development of immunochromatographic reagents Quality control Parameter Input voltage (AC) Power consumption (max.) Interface Light source Light detection The C10066-10 makes rapid, high-sensitivity quantitative measurements of color intensities for red/blue-based immunochromatographic reagents. Measurement data is saved as CSV files and so can be easily analyzed on commercially available spreadsheet software while drawing calibration curves and time-course graphs. Measurement object Dimensions (W x H x D) Weight Specification Unit 100 to 240 V 3 VA USB 2.0 (cable supplied) or RS-232C (dedicated cable optional) - Green LED / Red LED - Silicon photodiode - Red-based color line / Blue-based color line - 215 x 92 x 235 (excluding projecting parts) mm 1.6 kg Point of care test Immunochromato reader C11787 Computer-controlled immunochromato reader Features Easy data analysis and management Applications Biochemistry R&D Food allergy Agricultural viruses, residual pesticides Environmental endocrine disrupters Parameter Input voltage (AC) Power consumption (max.) Interface Light source The C11787 makes rapid, high-sensitivity quantitative measurements of color intensities for immunochromatographic reagents. Measurement results are saved in the PC, so the data can be easily analyzed and managed. We will design custom holders to match the immunochromatographic reagent you are using. Light detection Measurement object Dimensions (W x H x D) Weight Specification Unit 100 to 240 V 2 VA USB 2.0 (cable supplied) or RS-232C (dedicated cable optional) - Green LED - Silicon photodiode - Colloidal gold color line - 220 x 100 x 270 (excluding projecting parts) mm 1.2 kg 15 Electron tube product Light source Flash light source LIGHTNINGFLASH LF2 L10729-04, L10730-04 Allows installation of 15 W xenon flash lamp as well as 40 W lamp Features Long service life: 1 x 108 flashes Easily replaceable cassette type lamp Can be synchronized with CCD camera by external trigger Allows installation of two different lamps: 40 W or 15 W Applications Flash light source for various inspection cameras Parameter -04-01-1 -04-04-1 -04-01-2 40 40 15 Maximum lamp input energy (per flash) *1 0.5 1.28 0.5 J Maximum repetition rate *2 100 30 to 70 70 Hz 2 2 to 4 2 µs Flash duration (FWHM) Light output stability (typ.) *3 % 385 to 1600 nm 1 µs max. 300 to 1000 300 to 800 700 to 1000 V Delay time Lamp supply voltage W ±5 Spectral distribution The LF2 offers high performance nearly equal to our previous model LF1, yet offers lower cost by eliminating the CPU. The LF2 allows installation of two different lamps (40 W or 15 W) and the basic operations are performed by external control. Unit Maximum lamp input power *1: Input energy E=CV2·1/2 E: energy (J), C: main discharge capacitor (F), V: lamp supply voltage (Vdc) *2: Set the emission frequency so that the lamp input power does not exceed 40 W. Lamp input power = input energy x emission frequency *3: Measured with lamp supply voltage of 800 V, main discharge capacitor of 4 µF, and emission frequency of 30 Hz (at 40 W input). Light source 20 W Xenon flash lamp L1193X, L1194X, L1195X, L1196X series High stability and long service life Features High stability: 1 %CV (typ.) Long service life: 1 x 108 flashes High output: 1.1 to 1.2 times higher than conventional type Applications MTP reader Blood analysis Atmospheric analysis Parameter Window material Water quality, sewage pollution analysis Fluorospectrophotometer Semiconductor inspection Specification Unit Borosilicate Glass, UV Glass, Sapphire Glass, Fused Silica Glass - 700 to 1000 V Recommended supply voltage Max. input energy These lamps employ a new electrode with reduced wear that ensures highly stable operation even at high power input, achieving high stability and long service life. 16 Life Parameter 0.5 J 1 x 108 flash L1193X L1194X L1195X L1196X Unit Arc size 1.5 1.5 3.0 3.0 mm Built-in reflector NA Yes NA Yes - Electron tube product Light source UV-LED module LC-L1v3 L11921, L11922, E11923, C11924 series Integrated driver, hub and controller Compared to our previous model LC-L2, the LC-L1v3 UV-LED modules are compact and have advanced functions, yet offer lower cost. The driver, hub and controller, which are separated in the previous model, are integrated into a compact case. The driver is equipped with a simplified liquid crystal display, etc. for easier operation. Parameter UV irradiation intensity Peak wavelength Compact, high stability, high output and long service life Memory step function Feedback function Fanless design allows use in clean room Simple operation Unit 7500 10000 10500 15000 mW/cm2 365±5 385±5 365±5 385±5 nm 20000 h Input voltage (DC) 9±0.5 V 25 W Cooling method Air cooling without blower - +5 to +35 °C Storage temperature range -10 to +50 °C Operating humidity range 20 to 80 (No condensation) % Storage humidity range Below 80 (No condensation) % Operating temperature range Control method Dimension (W x D x H) Applications 385 nm 365 nm 385 nm standard high power high power type type type LED life Power consumption (max.) Features 365 nm standard type Applicable standard Manual control / External control - 160 x 104 x 30 mm - UV adhesive curing UV bonding 17 Electron tube product Light source H2D2 light source unit L11798/-01, L11799/-01 Uses high brightness, high performance deuterium lamp Features High brightness: 6 times (compared to our previous product) High stability: Fluctuation 0.05%p-p (max.), drift ±0.3%/h (max.) Long service life: 1000 hours guaranteed External control possible Air cooling (No cooling water required) Replaceable lamp Applications Semiconductor inspection Film thickness measurement Electro static remover Spectrophotometer Environmental measurement Optical component inspection Brightness distribution 650 600 Relative intensity (%) This unit uses a high brightness, high performance deuterium lamp (H2D2 lamp) that ensures 6 times higher intensity than our previous product (L2D2 lamp). Despite its high brightness, this unit has high stability and long service life, and allows air-cooled operation by use of a specially designed housing. Ease of use is significantly improved compared to the conventional water-cooled type. This unit can be used in a wide range of applications and delivers even higher sensitivity and higher throughput. 500 450 High brightness x6 H2D2 lamp 550 Conventional model X2D2 lamp L2D2 lamp ( 0.5 mm) 400 350 300 250 200 150 100 50 0 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 Distance from aperture center (mm) Electrostatic remover Photoionizer compact cube L11757 Removes static electricity using photoionization Features Compact head: Can be installed in narrow spaces Wide soft X-ray emission angle: 153 deg. Easy to shield Applications Electrostatic charge removal Electrostatic charge removal effect 40 cm 30 cm 20 cm 10 cm 10 cm 20 cm 30 cm 40 cm 153° 0.5 s 1.0 s 1.5 s 2.0 s 2.0 s The L11757 low-energy photoionizer is a compact, electrostatic charge remover made even smaller than our previous photoionizers. Its compact head unit is designed to give extremely good positioning freedom during installation, yet it still provides maintenance-free operation, zero dust generation, no electromagnetic noise emissions, no overshoot (generates no static charges of opposite polarity) and requires no air flow. 18 Measurement conditions Charging voltage: 1 kV to 100 V Temperature: 25 °C Humidity: 50 % Air flow: None Measuring device: Charging plate (150 mm × 150 mm, 20 pF) System product Camera Digital camera ORCA-Flash4.0 High sensitivity (QE: over 70 %) and high-speed (100 frames/s) scientific imaging CMOS camera Hamamatsu releases a new line of ORCA-Flash: ORCA-Flash4.0. It is a high-resolution, 4-megapixel camera which is equipped with the new scientific CMOS image sensor. The ORCA-Flash4.0 captures images at low noise, high resolution and high speed, making it suitable for most applications in various fields, from scientific imaging to semiconductor inspection, X-ray scintillator readout, and so on. Imaging example High speed Ca2+ imaging of cardiomyocyte derived from human iPS cells stained by Fluo8-AM Features High resolution: 4 megapixels Exceptional sensitivity (QE=over 70 % at 600 nm) High-speed readout: 100 frames/s Low noise: 1.3 electrons (at 100 frames/s) High dynamic range: 23 000:1 Wide field of view Applications Super resolution microscopy High-speed Ca2+ imaging Semiconductor inspection Low noise and fast readout time simultaneously Readout method Full resolution Sub-array readout (Typical examples) Number of pixels Readout speed at center position (frames/s) 2048 × 2048 100 2048 × 1024 200 2048 × 512 400 2048 × 256 800 2048 × 64 3200 2048 × 8 25 600 19 System product Camera Cooled InGaAs camera C10633-34 High-sensitivity camera for NIR imaging Features High sensitivity in NIR region (900 nm to 1520 nm) Low dark current with -70 degrees C peltier cooling Maintenance-free due to hermetic vacuum-sealed head Non-destructive readout feature (possible to monitor signal over a long period of time) Applications Solar cell and panel inspection by EL and/or PL Telecommunication device research Semiconductor inspection Spectral response 100 The C10633-34 is a cooled InGaAs camera with high sensitivity in the infrared region, especially in the range from 900 nm to 1520 nm. Peltier cooling lowers the sensor dark current to provide both enhanced image quality and long-term exposure. Furthermore, non-destructive readout improves signal-to-noise ratio, and provides very high sensitivity for low-light imaging. Quantum efficiency (%) 80 60 40 20 0 800 1000 1200 1400 1600 Wavelength (nm) Camera X-ray TDI camera C12200-321 High-speed X-ray imaging Features High-speed readout: approx. 36.8 m/min. Max. detection width: 221 mm High resolution and high sensitivity (Horizontal spatial resolution: 4608 with 128 TDI stages) Applications Printed circuit board (PCB) inspection Surface-mounted component inspection Lithium-ion battery inspection Imaging example The C12200, which uses the TDI (Time Delay Integration) method, is a high-resolution camera used for high-sensitivity, high-speed X-ray imaging. It produces bright and crisp images with high horizontal resolution (4608 pixels). 20 3By imaging the internal structure of a lithium battery, foreign materials can be detected. System product Camera Universal streak camera C10910 Capturing ultrafast optical phenomena occurring in extremely short time periods Features A diverse range of setups from single optical phenomena to high-speed repeated phenomena in the GHz region High sensitivity in UV to NIR region Superb time resolution: 1 picosecond (in single-shot or synchroscan) USB2.0 control Applications Measurement of electron bunch for synchrotron and LINAC applications Research involving free electron lasers and various other types of pulsed lasers Plasma light emission, Measurement example radiation, laser ablation, combustion and explosions The C10910 series are universal streak cameras, the products of high-speed optical phenomena techniques and imaging techniques. They measure varied optical phenomena by combining various plug-in sweep units and peripherals. The C10910's huge advantages over existing products are their excellent temporal resolution and computer-controlled operation. Measurement system Compact fluorescence lifetime spectrometer Measuring fluorescence lifetime with simple operation Quantaurus-Tau Features High-sensitivity measurement by photon counting method Time resolution better than 100 ps (by deconvolution) Cooling function for solution samples (-196 degrees C) (option) Phosphorescence measurement (option) Applications Measuring intermolecular transfer of metallo-organic complex Fluorescence/Phosphorescence lifetime measurement of materials Evaluating PV or compound semiconductor for LED Measurement example The Quantaurus-Tau is a compact fluorescence lifetime measuring system integrating a light source, spectrometer, and optics into a single box. It quickly measures the fluorescence lifetime and PL spectra of solutions, powders, solids and thin films just by loading the sample and giving a few instructions to the measurement software. Analysis results for basic measurements can be obtained in 1 minute. 5Thermal activation delayed fluorescence measurement (O-LED) Data courtesy of Prof. Chihaya Adachi, Dr. Takane Endo, Center for Future Chemistry, Kyushu University 21 System product Measurement system Absolute PL quantum yield spectrometer Quantaurus-QY Measuring fluorescence PL quantum yield with simple operation Features Measuring absolute photoluminescence quantum yield of light-emitting materials (PL measurement) Utilizes an integrating sphere to measure all luminous flux Cooling function for solution samples (-196 degrees C) (option) Automatically controls the excitation wavelengths Applications Research O-EL materials, white LED phosphors for FPD Evaluating dyes for dye-sensitized PV cell Quantum yield measurement of fluorescent bioprobe Measurement example Fluorescence quantum yield C9920-02: 0.28 ± 0.02 Literature: 0.27 ± 0.03 The Quantaurus-QY is a compact absolute PL quantum yield measuring system integrating a light source, spectrometer, and optics into a single box. It quickly measures the absolute PL quantum yield, excitation wavelength dependence and PL spectra of solutions, powders, solids and thin films just by loading the sample and giving a few instructions to the measurement software. Analysis results for basic measurements can be obtained in 1 minute. Intensity (a. u.) 1 3Fluorescence spectrum and quantum yield of anthracene solution Collaborative research of Hamamatsu Photonics K.K.; A. Kobayashi, S. Kaneko, K. Takehira, T. Yoshihara, and S. Tobita, Faculty of Engineering, Gunma University; H.Ishida, Y.Shiina, and S.Oishi, School of Science, Kitasato University 0.5 0 350 400 450 500 550 600 Wavelength (nm) Measurement system Optical NanoGauge C11627 Measuring thin films 20 nm to 50 µm thick in real time with high accuracy Features Designed to mount inside customer's equipment Easily handles height fluctuations Measures thin films 20 nm to 50 µm thick in real time with high accuracy Applications Film on a wafer thickness measurement Film thickness measurement of FPD panel Application film, coated film, plastic film Specifications Measurable film thickness range 20 nm to 50 µm Measurement reproducibility The C11627 is a compact film thickness measuring system integrating a light source, spectrometer, and data analyzer into a single box and designed to install into a customer's equipment. It requires no timeconsuming reference measurements and so provides long-term stable measurements that are quick and highly accurate. 22 0.02 nm Measurement accuracy ±0.4% Light source LED Spot size Approx. φ1 mm Working distance 10 mm Number of measurable layers Max. 10 layers Measurement time 19 ms/point System product Measurement system Optical MicroGauge C11665 Measuring thin films 0.5 µm to 700 µm thick in real time with high accuracy Features Designed to mount inside customer's equipment Easily handles height fluctuations Measures thin films 0.5 µm to 700 µm thick in real time with high accuracy Applications Film on a wafer thickness measurement Thin-film thickness measurement Glass thickness measurement Specifications The C11665 is a compact thickness measuring system integrating a light source, spectrometer, and data analyzer into a single box and designed to install into a customer's equipment. It requires no time-consuming reference measurements and so provides long-term stable measurements that are quick and highly accurate. Measurable film thickness range 0.5 µm to 700 µm (Refractive index of glass: 1.5) 0.5 µm to 300 µm (Refractive index of silicon: 3.67) Measurement reproducibility 5 nm (Standard deviation when a 150 µm thick glass was measured.) 0.1 nm (Standard deviation when a 6 µm thick silicon film was measured.) Light source LED Spot size Approx. φ1 mm Working distance 10 mm Number of measurable layers Max. 10 layers Measurement time 19 ms/point Measurement system PV imaging system EPLi Evaluating PV cells and modules by EL/ PL method Applications «EL method» Process failure Cracks Grid / Finger failure «PL method» Material/Crystalline failure Thin-film defect Obstacles Measurement example The EPLi imaging system inspects PV cells and modules by measuring electroluminescence (EL) and intensity distribution or fluorescence brightness of the photoluminescence (PL). It is suitable to measure Si, a-Si, CIGS, dye-sensitized cells and modules. 23 System product Measurement system Functional drug screening system FDSS7000EX Features Cell-based assay system (corresponding to HTS) Suitable for 1536, 384 and 96 wells microplates Detecting fluorescence and light emission Measuring adherent cells and floating cells Selectable functions depending on usage (Fura-2, FRET, etc.) Applications Intracellular ion assay Membrane potential assay Various ion channel assay Measurement example The FDSS7000EX is a cell-based assay system corresponding to HTS (High Throughput Screening). It has 1536, 384 and 96 wellplates for batch measurements and quick and highly precise assays. Its multiple functions support the creation of new drugs. 5Measurement example (1536 wells) Measurement system Fluorescence imaging module L11600-21, -22 Fluorescence Imaging Module for NanoZoomer2.0 (Option) Features Scan multiple fluorescence probes* Superimpose images of entire tissues High power and long life light source without alignment Features dark field illumination for sample identification * 6 switchable filters for fluorescence and excitation wavelengths allow acquiring multiple images sequentially. Imaging example L11600-21, -22 The Fluorescence Imaging Module combined with the NanoZoomer 2.0 series digitizes entire fluorescence-stained slides with high speed and high resolution. The digitized slides are saved as digital data, and this enables long term microscopic observation without photobleaching. 24 5Rapid and high-fidelity imaging of fluorescencelabeled Q-dots (human pancreas) (Data courtesy of the Department of Pathology, Keio University School of Medicine) Laser product Laser Quantum cascade laser L12004-2190H-C, L12007-1294H-C, L12017-1278T-C A new light source for mid-IR applications such as molecular gas analysis. Features Mid-IR laser (4 µm to 10 µm) Compact, lightweight Applications Trace gas analysis (Environmental measurement, Combustion gas measurement, Plasma measurement, In vivo gas analysis) IR molecular spectroscopy 4.5579 2192 4.5620 2190 4.5662 Top(qcl)=20 °C 2188 Top(qcl)=30 °C 2186 2184 0.7 4.5704 Top(qcl)=40 °C 4.5746 0.8 0.9 1.0 4.5788 1.1 n L12017-1278T-C 1286 7.7760 1284 7.7882 1282 7.8003 1280 7.8125 1278 7.8247 1276 7.8370 1274 -20 0 20 40 7.7160 Top(qcl)=10 °C 1294 7.7280 Top(qcl)=20 °C Top(qcl)=30 °C 1292 0.4 0.5 0.6 0.7 7.7399 7.7519 0.8 Forward current If (A) L12004-2190H-C Parameter Symbol Condition Typ. If=fixed Temperature coefficient of wavenumber δKT -0.18 cm-1/°C Current coefficient of wavenumber δKC Top(qcl)=fixed -0.015 cm-1/mA Wavelength (µm) Emission wavenumber K (cm-1) Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-IR range (4 µm to 10 µm). They have gained considerable attention as a new light source for mid-IR applications such as molecular gas analysis. 7.7042 1296 1290 0.3 Forward current If (A) n L12007-1294H-C 1298 Emission wavenumber K (cm-1) 2194 Wavelength (µm) n L12004-2190H-C Wavelength (µm) Emission wavenumber K (cm-1) n n L12007-1294H-C Parameter Symbol Condition Typ. If=fixed Temperature coefficient of wavenumber δKT -0.1 cm-1/°C Current coefficient of wavenumber δKC Top(qcl)=fixed -0.01 cm-1/mA n L12017-1278T-C Parameter Symbol Condition Ifp=fixed Temperature coefficient of wavenumber δKT Typ. -0.1 cm-1/°C 7.8493 60 Operating temperature (QCL) Top(qcl) (°C) 25 HAMAMATSU PHOTONICS K.K. www.hamamatsu.com Main Products Sales Offices Opto-semiconductors Si photodiodes APD MPPC Photo IC Image sensors X-ray flat panel sensors PSD Infrared detectors LED Optical communication devices Automotive devices Mini-spectrometers High energy particle/X-ray detectors Opto-semiconductor modules JAPAN: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku Hamamatsu City, 430-8587, Japan Telephone: (81)53-452-2141, Fax: (81)53-456-7889 Electron Tubes Photomultiplier tubes Photomultiplier tube modules Microchannel plates Image intensifiers Xenon lamps / Mercury xenon lamps Deuterium lamps Light source applied products Laser applied products Microfocus X-ray sources X-ray imaging devices Imaging and Processing Systems Cameras / Image processing measuring systems X-ray products Life science systems Medical systems Semiconductor failure analysis systems FPD / LED characteristic evaluation systems Spectroscopic and optical measurement systems Laser Products Semiconductor lasers Applied products of semiconductor lasers Solid state lasers Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 Email: [email protected] U.S.A.: HAMAMATSU CORPORATION Main Office 360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A. Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Spanish Office: C. Argenters, 4 edif 2 Parque Tecnologico del Valles E-08290 CERDANYOLA, (Barcelona) Spain Telephone: (34)93 582 44 30 Fax: (34)93 582 44 31 E-mail: [email protected] Germany, Denmark, Netherlands, Poland: HAMAMATSU PHOTONICS DEUTSCHLAND GmbH Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] Danish Office: Lautruphoj 1-3 DK-2750 Ballerup, Denmark Telephone: (45)70 20 93 69, Fax: (45)44 20 99 10 E-mail: [email protected] Western U.S.A. Office: Suite 200, 2875 Moorpark Avenue San Jose, CA 95128, U.S.A. Telephone: (1)408-261-2022, Fax: (1)408-261-2522 E-mail: [email protected] Netherlands Office: Televisieweg 2 NL-1322 AC Almere, The Netherlands Telephone: (31)36-5405384, Fax: (31)36-5244948 E-mail: [email protected] United Kingdom, South Africa: HAMAMATSU PHOTONICS UK LIMITED Main Office 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] Poland Office: 02-525 Warsaw, 8 St. A. Boboli Str., Poland Telephone: (48)22-646-0016, Fax: (48)22-646-0018 E-mail: [email protected] South Africa Office: PO Box 1112 Buccleuch 2066 Johannesburg, South Africa Telephone/Fax: (27)11-802-5505 France, Portugal, Belgium, Switzerland, Spain: HAMAMATSU PHOTONICS FRANCE S.A.R.L. 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France Telephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10 E-mail: [email protected] Swiss Office: Dornacherplatz 7 4500 Solothurn, Switzerland Telephone: (41)32/625 60 60, Fax: (41)32/625 60 61 E-mail: [email protected] Belgian Office: Scientific Park, 7, Rue du Bosquet B-1348 Louvain-La-Neuve, Belgium Telephone: (32)10 45 63 34 Fax: (32)10 45 63 67 E-mail: [email protected] North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Smidesvägen 12 SE-171 41 Solna, Sweden Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Russian Office: Vyatskaya St. 27, bld. 15 Kosmodamianskaya nab. 52/1, 14th floor RU-127015 Moscow, Russia Telephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19 E-mail: [email protected] Italy: HAMAMATSU PHOTONICS ITALIA S.R.L. Strada della Moia, 1 int. 6 20020 Arese, (Milano), Italy Telephone: (39)02-935 81 733 Fax: (39)02-935 81 741 E-mail: [email protected] Rome Office: Viale Cesare Pavese, 435 00144 Roma, Italy Telephone: (39)06-50513454, Fax: (39)06-50513460 E-mail: [email protected] © 2012 Hamamatsu Photonics K.K. Quality, technology, and service are part of every product. Cat. No. XPRD1011E01 Jan. 2012 DN Printed in Japan (5,000)