To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. BB504M Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-982E (Z) 6th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; MPAK-4 (SOT-143Rmod) Outline MPAK-4 2 3 1 4 Notes: 1. 2. 1. Source 2. Gate1 3. Gate2 4. Drain Marking is “DS–”. BB504M is individual type number of HITACHI BBFET. BB504M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate2 to source voltage VG2S +6 –0 V Drain current ID 30 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V I D = 200µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +6 — — V I G1 = +10µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +6 — — V I G2 = +10µA, VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +5V, V G2S = VDS = 0 Gate2 to source cutoff current I G2SS — — +100 nA VG2S = +5V, V G1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.6 0.85 1.1 V VDS = 5V, VG2S = 4V, ID = 100µA Gate2 to source cutoff voltage VG2S(off) 0.6 0.85 1.1 V VDS = 5V, VG1S = 5V, ID = 100µA Drain current I D(op) 13 16 19 mA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 120kΩ Forward transfer admittance |yfs| 24 29 34 mS VDS = 5V, VG1 = 5V, VG2S =4V RG = 120kΩ, f = 1kHz Input capacitance c iss 1.7 2.1 2.5 pF VDS = 5V, VG1 = 5V Output capacitance c oss 1.0 1.4 1.8 pF VG2S =4V, RG = 120kΩ Reverse transfer capacitance c rss — 0.027 0.05 pF f = 1MHz Power gain (1) PG 25 30 — dB VDS = 5V, VG1 = 5V VG2S =4V, RG = 120kΩ Noise figure (1) NF — 1.0 1.8 dB f = 200MHz Power gain (2) PG 17 22 — dB VDS = 5V, VG1 = 5V VG2S =4V, RG = 120kΩ Noise figure (2) NF — 1.75 2.3 dB f = 900MHz 2 BB504M Test Circuits • DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID • 200 MHz Power Gain, Noise Figure Test Circuit 1000p 1000p 47k VT VG2 VT 1000p 47k 1000p 47k BBFET Output(50Ω) 1000p L2 Input(50Ω) L1 10p max 1000p 1000p 36p 1SV70 RG RFC 120k 1SV70 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB504M • 900 MHz Power Gain, Noise Figure Test Circuit VD VG1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC D G2 Output L3 L4 G1 Input S L1 L2 C1 C1, C2 C3 C4 to C6 R1 R2 R3 C2 : : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 120 kΩ 47 kΩ 4.7 kΩ L2: L1: 10 3 3 8 10 26 (Φ1mm Copper wire) Unit:mm 21 L4: L3: 18 10 10 7 7 29 RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm 4 Typical Output Characteristics 50 0 50 100 150 Ambient Temperature Forward Transfer Admittance |y fs | (mS) I D (mA) Drain Current V DS = 5 V R G = 120 kΩ 4V 12 3V 2V 8 4 VG2S = 1 V 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 8k =6 4 Ta (°C) 20 kΩ 0 18 Ω 0k 22 8 0 200 Drain Current vs. Gate1 Voltage 16 12 82 10 k Ω 15 0 1 2 k 0 kΩ 0 kΩ Ω 100 16 RG 150 V G2S = 4 V V G1 = VDS Ω 20 I D (mA) 200 Maximum Channel Power Dissipation Curve Drain Current Channel Power Dissipation Pch (mW) BB504M 1 2 3 Drain to Source Voltage 4 5 V DS (V) Forward Transfer Admittance vs. Gate1 Voltage 30 24 V DS = 5 V R G = 120 kΩ f = 1 kHz 4V 3V 18 2V 12 6 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 5 BB504M Noise Figure vs. Gate Resistance Power Gain vs. Gate Resistance 4 Power Gain PG (dB) 35 30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz Noise Figure NF (dB) 40 3 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Power Gain vs. Gate Resistance Power Gain PG (dB) 30 25 20 6 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Noise Figure NF (dB) 4 35 10 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Noise Figure vs. Gate Resistance 40 15 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200MHz 3 V DS = 5V V G1 = 5 V V G2S = 4 V f = 900 MHz 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) BB504M Input Capacitance vs. Gate2 to Source Voltage Drain Current vs. Gate Resistance 4 Input Capacitance Ciss (pF) Drain Current ID (mA) 30 20 10 V DS = VG1=5 V VG2S = 4 V 0 10 3 2 0 20 50 100 200 V DS = VG1= 5 V R G = 120 kΩ f = 1 MHz 1 500 1000 0 Gain Reduction vs. Gate2 acto Source Voltage Gain Reduction GR (dB) Gain Reduction GR (dB) 10 20 30 V DS = V G1 = 5 V R G = 120 kΩ f = 200 MHz 3 2 1 Gate2 to Source Voltage VGS2 (V) 4 10 20 30 0 V DS = V G1 = 5 V R G = 120 kΩ f = 900 MHz 40 50 4 3 Gain Reduction vs. Gate2 acto Source Voltage 0 0 50 2 Gate2 to Source Voltage VGS2 (V) Gate Resistance RG (kΩ) 40 1 4 3 2 1 0 Gate2 to Source Voltage VGS2 (V) 7 BB504M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 - .2 -3 - .4 - 30° - 150° -2 - .6 - .8 -1 - 90° Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k Ω, Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k Ω, Zo = 50 Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.004/ div. .8 60° 120° - 60° - 120° - 1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -5 -4 - .2 - 30° - 150° -3 - .4 - 60° - 120° - 90° Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k Ω, Zo = 50 Ω 50 to 1000 MHz (50 MHz step) 8 -2 - .6 - .8 -1 - 1.5 Test Condition: VDS = 5 V, V G1 = 5 V VG2S = 4 V, R G = 120 k Ω , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) BB504M Sparameter (VDS = VG1 = 5V, VG2S = 4 V, RG = 120 kΩ, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 1.000 -3.3 2.80 175.9 0.00106 58.8 0.990 -2.4 100 0.993 -7.2 2.78 170.9 0.00171 75.7 0.992 -4.7 150 0.991 -10.9 2.77 166.1 0.00253 75.1 0.991 -7.2 200 0.984 -15.0 2.74 161.2 0.00356 77.4 0.987 -9.6 250 0.978 -19.0 2.72 156.5 0.00442 78.2 0.985 -12.2 300 0.970 -22.8 2.68 151.8 0.00485 80.0 0.982 -14.7 350 0.958 -26.7 2.64 147.2 0.00576 74.7 0.978 -17.1 400 0.954 -30.3 2.60 142.7 0.00642 71.7 0.973 -19.6 450 0.945 -33.8 2.56 138.6 0.00689 73.3 0.968 -22.0 500 0.932 -37.5 2.50 134.1 0.00712 71.8 0.963 -24.2 550 0.920 -40.6 2.46 129.8 0.00765 70.7 0.958 -26.7 600 0.910 -44.3 2.41 125.7 0.00804 69.9 0.952 -28.9 650 0.900 -47.5 2.37 121.6 0.00798 69.1 0.947 -31.3 700 0.887 -50.9 2.31 117.8 0.00787 67.8 0.942 -33.4 750 0.870 -54.4 2.27 113.6 0.00785 70.8 0.936 -35.8 800 0.863 -57.6 2.22 110.0 0.00758 73.3 0.929 -37.9 850 0.853 -60.9 2.18 105.8 0.00721 75.2 0.924 -40.3 900 0.839 -63.6 2.12 102.2 0.00694 75.8 0.917 -42.5 950 0.827 -66.5 2.07 98.6 0.00716 88.1 0.912 -44.5 1000 0.819 -70.1 2.04 94.9 0.00667 92.7 0.906 -46.7 9 BB504M Package Dimensions As of January, 2001 Unit: mm 0.1 0.4 +– 0.05 0.95 0.16 – 0.06 2.8 0 – 0.1 0.65 0.1 0.6 +– 0.05 + 0.1 0.65 0.1 0.4 +– 0.05 1.5 ± 0.15 0.4 – 0.05 + 0.2 – 0.6 + 0.1 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.85 1.1 – 0.1 + 0.2 0.3 1.8 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 10 MPAK-4 — Conforms 0.013 g BB504M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11