RENESAS HAT2141H

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Electric and Hitachi XX, to Renesas Technology Corp.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
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HAT2141H
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1582E(Z)
Preliminary
6th. Edition
Sep. 2002
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 22 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
3
1 2
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
HAT2141H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
15
A
60
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAP
Avalanche energy
EAR
Note1
Note 3
Note 3
Note2
15
A
15
A
22.5
mJ
20
W
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to + 150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.5, Sep. 2002, page 2 of 10
HAT2141H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
100
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
22
27.5
mΩ
ID = 7.5 A, VGS = 10 V
resistance
RDS(on)
—
23.5
32
mΩ
ID = 7.5 A, VGS = 7 V
Forward transfer admittance
|yfs|
15
25
—
S
ID = 7.5 A, VDS = 10 V
Input capacitance
Ciss
—
3200
—
pF
VDS = 10 V
Output capacitance
Coss
—
255
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
125
—
pF
f = 1 MHz
Total gate charge
Qg
—
46
—
nc
VDD = 50 V
Gate to source charge
Qgs
—
11
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
10
—
nc
ID = 15 A
Turn-on delay time
td(on)
—
22
—
ns
VGS = 10 V, ID = 7.5 A
Rise time
tr
—
13
—
ns
VDD ≅ 30 V
Turn-off delay time
td(off)
—
70
—
ns
RL = 4 Ω
Fall time
tf
—
10
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.82
1.07
V
IF = 15 A, VGS = 0
—
50
—
ns
IF = 15 A, VGS = 0
diF/ dt = 100 A/ µs
Body–drain diode reverse recovery trr
time
Note4
Note4
Note4
Note4
Notes: 4. Pulse test
Rev.5, Sep. 2002, page 3 of 10
HAT2141H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
I D (A)
500
30
20
10
0
100
10
50
100
150
200
Tc (°C)
s(
t)
Tc = 25°C
Typical Transfer Characteristics
20
V DS = 10 V
Pulse Test
4.0 V
ID
4.5 V
(A)
16
12
8
3.7 V
VGS = 3.5 V
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Drain Current
I D (A)
Drain Current
ho
Ta = 25°C
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
10 V
Rev.5, Sep. 2002, page 4 of 10
1s
DC Operation
Pulse Test
0
=1
Operation in
area is
1 this
limited by RDS(on)
Typical Output Characteristics
4
µs
0
1m
µs
s
10
0m
0.1
Case Temperature
20
10
PW
Drain Current
Channel Dissipation
Pch (W)
40
16
12
8
25°C
Tc = 75°C
-25°C
4
0
2
4
6
Gate to Source Voltage
10
8
V GS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
Drain to Source On State Resistance
R DS(on) (m Ω)
V DS(on) (mV)
HAT2141H
200
600
400
I D = 10 A
200
5A
2A
Static Drain to Source on State Resistance
R DS(on) (m Ω)
0
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I D = 2 A, 5 A, 10 A
40
V GS = 7 V
2 A, 5 A, 10 A
20
10 V
0
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
50
VGS = 7 V
20
10 V
10
5
2
1
0.1
0.2
1
0.5
Drain Current
2
5
I D (A)
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Voltage
100
100
Tc = -25°C
30
75°C
10
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.5, Sep. 2002, page 5 of 10
HAT2141H
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
10
0.1
1000
300
Crss
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
30
0
VDD = 100 V 12
50 V
25 V
8
0
VDD = 100 V
50 V
25 V
20
40
60
80
Gate Charge Qg (nc)
Rev.5, Sep. 2002, page 6 of 10
40
50
4
0
100
500
Switching Time t (ns)
120
40
30
1000
V GS (V)
16
80
20
Switching Characteristics
20
160
V DS
10
Drain to Source Voltage V DS (V)
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
V GS
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
I D = 15 A
Coss
100
Dynamic Input Characteristics
200
Ciss
3000
200
100
50
t d(off)
t d(on)
20
tr
10
tf
5
V GS = 10 V , VDS = 30 V
2
Rg = 4.7 Ω, duty < 1 %
1
0.1 0.3
1
3
10
30
Drain Current I D (A)
100
HAT2141H
16
Repetitive Avalanche Energy EAR (mJ)
(A)
20
Reverse Drain Current I F
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10 V
V GS = 0
5V
12
8
4
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
50
I AP = 15 A
V DD = 50 V
duty < 0.1 %
Rg > 50 Ω
40
30
20
10
0
25
V SDF (V)
50
75
100
125
150
Channel Temperature Tch (˚C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
I AP
Monitor
L • IAP2 •
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Rev.5, Sep. 2002, page 7 of 10
HAT2141H
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.2
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 6.25°C/ W, Tc = 25°C
0.1
0.05
PDM
0.02
1
0.0
D=
e
uls
PW
p
ot
T
sh
0.01
10 µ
PW
T
1
100 µ
1m
100 m
10 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 30 V
Vout
10%
10%
90%
td(on)
Rev.5, Sep. 2002, page 8 of 10
tr
10%
90%
td(off)
tf
HAT2141H
Package Dimensions
As of July, 2002
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
1.27
0.10
0.40 ± 0.06
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Rev.5, Sep. 2002, page 9 of 10
HAT2141H
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.5, Sep. 2002, page 10 of 10