RENESAS H7N0203AB

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
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H7N0203AB
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1490C (Z)
4th. Edition
Aug. 2002
Features
• Low on-resistance
• RDS(on) =2.4 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220AB
D
G
1
2
S
3
1. Gate
2. Drain (Flange)
3. Source
H7N0203AB
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
90
A
360
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAP
Avalanche energy
EAR
Note 1
Note2
Note2
Note 3
90
A
20
A
40
mJ
100
W
Channel dissipation
Pch
Channel to Case Thermal Impedance
θch-c
1.25
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Value at Tc = 25°C
Rev.3, Aug. 2002, page 2 of 10
H7N0203AB
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS
20
—
—
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 20 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V*
Static drain to source on state
RDS(on)
—
2.4
3.0
mΩ
ID = 45 A, VGS = 10 V*
—
3.5
5.1
mΩ
ID = 45 A, VGS = 4.5 V*
|yfs|
80
140
—
S
ID = 45 A, VDS = 10 V*
Input capacitance
Ciss
—
6800
—
pF
VDS = 10 V
Output capacitance
Coss
—
1850
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
750
—
pF
f = 1 MHz
Total gate charge
Qg
—
110
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
22
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
20
—
nc
ID = 90 A
Turn-on delay time
td(on)
—
32
—
ns
VGS = 10 V, ID = 45 A
Rise time
tr
—
380
—
ns
RL =0.22 Ω
Turn-off delay time
td(off)
—
110
—
ns
Rg =4.7 Ω
Fall time
tf
—
35
—
ns
Body–drain diode forward voltage
VDF
—
0.90
—
V
IF = 90 A, VGS = 0
—
60
—
ns
IF = 90 A, VGS = 0
diF/ dt =50 A/µs
resistance
Forward transfer admittance
Body–drain diode reverse recovery trr
time
Note:
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
1
1
1
1
1. Pulse test
Rev.3, Aug. 2002, page 3 of 10
H7N0203AB
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Drain Current I D (A)
120
80
40
10
0µ
1m s
s
100
30
10
DC Operation
(Tc = 25°C)
3
1
Operation in
0.3 this area is
limited by RDS(on)
PW = 10 ms
(1shot)
0.1
0
50
100
Case Temperature
150
200
Tc (°C)
Typical Output Characteristics
100
80
Drain Current I D (A)
10 µs
300
10 V
Pulse Test
0.03
Ta = 25°C
0.01
3
30
0.1 0.3
1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
V DS = 10 V
Pulse Test
5V
3.5 V
80
3.0 V
60
2.8 V
40
20
Drain Current I D (A)
Channel Dissipation
Pch (W)
160
60
40
20
Tc = 75°C
VGS = 2.4 V
0
2
4
6
8
10
Drain to Source Voltage V DS (V)
Rev.3, Aug. 2002, page 4 of 10
0
-25°C
25°C
5
2
3
4
1
Gate to Source Voltage V GS (V)
H7N0203AB
0.4
Pulse Test
0.3
0.2
I D = 50 A
0.1
20 A
10 A
0
4
8
12
16
Drai to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
V DS(on) (mV)
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
VGS = 4.5 V
10 V
1
20
1
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
I D = 50 A
I D = 10, 20 A
6
4 V GS = 4.5 V
I D = 10, 20, 50 A
2
V GS = 10 V
0
–25
0
25
50
75
100 125 150
Case Temparature Tc
(°C)
10
100
Drain Current I D (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Gate to Source Voltage VGS (V)
1000
Tc = –25°C
100
25°C
10
75°C
1
V DS = 10 V
Pulse Test
0.1
0.01
0.1
1
10
100
Drain Current I D (A)
Rev.3, Aug. 2002, page 5 of 10
H7N0203AB
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Drain to source Voltage V DS (V)
100000
Capacitance C (pF)
50000
20000
10000
Ciss
5000
2000
Coss
1000
Crss
500
VGS = 0
f = 1 MHz
200
40
VDD = 5 V
10 V
20 V
30
20
4
8
12
16
20
10
0
Drain to Source Voltage V DS (V)
Switching Time t (ns)
tr
t d(off)
100
tf
t d(on)
0.3
1
3
10
30
Drain Current I D (A)
Rev.3, Aug. 2002, page 6 of 10
100
Drai to Source on State Resistance
trr (ns)
1000
10
0.1
16
12
8
VDD = 20 V
10 V
5V
40
80
120
160
Gate Charge Qg (nC)
4
0
200
Static Drain to Source on State Resistance
vs. Drain Current
100
Switching Characteristics
V GS = 10 V, V DD = 10 V
duty ≤ 1%
VGS
VDS
100
0
20
I D = 90 A
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
10
0.1
1
10
Drain Current I DR (A)
100
Gate to Source Voltage V GS (V)
50
H7N0203AB
Maximum Avalanche Energy vs.
Channel Temperature Derating
EAR (mJ)
Reverce Drain Current vs.
Source to Drain Voltage
80
10 V
Repettive Avalanche Energy
Reverce Drain Current I F
(A)
100
V GS = 0, -5 V
60
5V
40
20
Pulse Test
0
0.4
0.8
1.2
1.6
Source Drain Voltage
2.0
50
I AP = 20 A
V DD = 10 V
duty < 0.1 %
Rg > 50 Ω
40
30
20
10
0
25
VSDF (V)
Avalanche Test Circuit
V DS
Monitor
50
75
100
Channel Temperature
125
150
Tch (°C)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Rev.3, Aug. 2002, page 7 of 10
H7N0203AB
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch - c(t) = γs (t) · θ ch - c
θ ch - c = 1.25°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
e
0.0
uls
tp
o
h
1s
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
100 m
10 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3, Aug. 2002, page 8 of 10
tr
10%
90%
td(off)
tf
H7N0203AB
Package Dimensions
As of January, 2002
Unit: mm
2.79 ± 0.2
11.5 MAX
10.16 ± 0.2
9.5
+0.1
φ 3.6 –0.08
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Rev.3, Aug. 2002, page 9 of 10
H7N0203AB
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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URL
http://www.hitachisemiconductor.com/
For further information write to:
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(America) Inc.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, Aug. 2002, page 10 of 10