ELDRS Radiation Test Report MSK106RH Radiation Hardened High Power Op Amp August 25, 2008 Revised February 7, 2014 B. Erwin F. Freytag M.S. Kennedy Corporation Liverpool, NY 1 I. Introduction: The ELDRS radiation test for the MSK106RH was developed to qualify the device to 50 Krad(Si). MIL-STD-883 Method 1019 Condition C and ASTM F1892-06 were used as guidelines in the development and implementation of the ELDRS test plan for the MSK106RH. II. Radiation Source: ELDRS test was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Dosimetry was performed prior to device irradiation and the dose rate was determined to be 0.01 rads(Si)/sec. The ELDRS dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source in the University of Massachusetts ELDRS facility, chamber #2. Four devices were kept under bias during irradiation. Maximum recommended operating voltages of ± 18 Volts were used for bias. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation, the device leads were shorted together then the devices were packaged for shipment, and shipped overnight to the MSK facility. Electrical testing to the MSK device data sheet was performed within 72 hours from the removal of the radiation source. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Devices were then repackaged for shipment and returned to the UMass facility overnight for subsequent dose level. Devices were returned to the irradiation field within 120 hours of removal from the radiation source per MIL-STD-883 Method 1019 Condition C. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: The devices passed all post irradiation specifications up to 50 Krads(Si). The unbiased devices exhibited a more significant shift than the biased devices throughout testing. Devices exhibited a slight quiescent current decrease. Input bias current increased significantly, but stayed within pre irradiation limits to 50 Krads(Si). Positive and negative slew rate decreased as testing progressed to 50 Krads(Si). All devices passed pre irradiation test limits to 50 Krads(Si) except serial number 0220, which had a final slew rate of 1.19V/uS. The device was still within the post irradiation limits. Transition times showed a slight increase as well. However, all devices except 0220 stayed within pre irradiation limits up to 50 Krads(Si). Serial number 0020 increased to 1.02 uS, which is still within post irradiation limits. 2 MSK106RH Biased/Unbiased Dose Rate Schedule Dosimetry Equipment Bruker Biospin # 0141 Irradiation Date 6/03/08 – 8/07/08 Exposure Length (hr:min:sec) Incremental Dose rads(Si) Cumulative Dose rads(Si) 332:04:00 264:58:00 335:38:00 475:34:00 1.24E4 9.84E3 1.24E4 1.75E4 12,380 22,220 34,620 52,090 Biased S/N – 0186, 0187, 0197, 0196 Unbiased S/N – 0199, 0203, 0219, 0220 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose 3 Positive Quiescent Current vs. Total Dose 1.50 Positive Quiescent Current (mA) 1.45 1.40 1.35 Avg. Bias Avg. Gnd 1.30 1.25 1.20 1.15 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Negative Quiescent Current vs. Total Dose 1.50 Negative Quiescent Current (mA) 1.45 1.40 1.35 Avg. Bias Avg. Gnd 1.30 1.25 1.20 1.15 0 12.4 22.2 34.6 Total Dose in Krads(Si) 4 52 Input Offset Voltage vs. Total Dose 0.50 0.40 Input Offset Voltage (mV) 0.30 0.20 0.10 Avg. Bias 0.00 Avg. Gnd -0.10 -0.20 -0.30 -0.40 -0.50 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Power Supply Rejection Ratio vs. Total Dose Power Supply Rejection Ratio (dB) 140.00 130.00 120.00 Avg. Bias 110.00 Avg. Gnd 100.00 90.00 80.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 5 52 Positive Input Bias Current vs. Total Dose 300.00 Positive Input Bias Current (nA) 250.00 200.00 Avg. Bias 150.00 Avg. Gnd 100.00 50.00 0.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Negative Input Bias Current vs. Total Dose Negative Input Bias Current (nA) 300.00 250.00 200.00 Avg. Bias 150.00 Avg. Gnd 100.00 50.00 0.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 6 52 Input Offset Current vs. Total Dose 50.00 45.00 Input Offset Current (nA) 40.00 35.00 30.00 Avg. Bias 25.00 Avg. Gnd 20.00 15.00 10.00 5.00 0.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Positive Output Swing (RL = 100 Ω) vs. Total Dose 15.00 Positive Output Swing (V) 14.50 14.00 Avg. Bias 13.50 Avg. Gnd 13.00 12.50 12.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 7 52 Negative Output Swing (RL = 100 Ω) vs. Total Dose 15.00 Negative Output Swing (V) 14.50 14.00 Avg. Bias 13.50 Avg. Gnd 13.00 12.50 12.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Positive Output Swing (RL =10 Ω) vs. Total Dose 15.00 Positive Output Swing (V) 14.50 14.00 Avg. Bias 13.50 Avg. Gnd 13.00 12.50 12.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 8 52 Negative Output Swing (RL = 10 Ω) vs. Total Dose 15.00 Negative Output Swing (V) 14.50 14.00 Avg. Bias 13.50 Avg. Gnd 13.00 12.50 12.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Positive Slew Rate vs. Total Dose 1.80 1.60 Positive Slew Rate (V/µS) 1.40 1.20 1.00 Avg. Bias Avg. Gnd 0.80 0.60 0.40 0.20 0.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 9 52 Negative Slew Rate vs. Total Dose 1.80 1.60 Negative Slew Rate (V/µS) 1.40 1.20 1.00 Avg. Bias Avg. Gnd 0.80 0.60 0.40 0.20 0.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Positive Short Circuit Current (Rsc = 0.5 Ω) vs. Total Dose 1.60 Positive Short Circuit Current (A) 1.50 1.40 1.30 Avg. Bias 1.20 Avg. Gnd 1.10 1.00 0.90 0.80 0 12.4 22.2 34.6 Total Dose in Krads(Si) 10 52 Negative Short Circuit Current (Rsc = 0.5 Ω) vs. Total Dose 1.60 Negative Short Circuit Current (A) 1.50 1.40 1.30 Avg. Bias 1.20 Avg. Gnd 1.10 1.00 0.90 0.80 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Positive Short Circuit Current (Rsc = 5 Ω) vs. Total Dose 200.00 Positive Short Circuit Current (mA) 190.00 180.00 170.00 160.00 Avg. Bias 150.00 Avg. Gnd 140.00 130.00 120.00 110.00 100.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 11 52 Negative Short Circuit Current (Rsc = 5 Ω) vs. Total Dose 200.00 Negative Short Circuit Current (mA) 190.00 180.00 170.00 160.00 Avg. Bias 150.00 Avg. Gnd 140.00 130.00 120.00 110.00 100.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Voltage Gain vs. Total Dose 120.00 Voltage Gain (dB) 115.00 110.00 Avg. Bias 105.00 Avg. Gnd 100.00 95.00 90.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 12 52 Common Mode Rejection Ratio vs. Total Dose 100.00 Common Mode Rejection Ratio (dB) 98.00 96.00 94.00 92.00 Avg. Bias 90.00 Avg. Gnd 88.00 86.00 84.00 82.00 80.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Positive Transition Time vs. Total Dose Positive Transition Time (µS) 1.00 0.80 0.60 Avg. Bias Avg. Gnd 0.40 0.20 0.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 13 52 Negative Transition Time vs. Total Dose Negative Transition Time (µS) 1.00 0.80 0.60 Avg. Bias Avg. Gnd 0.40 0.20 0.00 0 12.4 22.2 34.6 52 Total Dose in Krads(Si) Rising Edge Overshoot vs. Total Dose 20.00 18.00 Rising Edge Overshoot (%) 16.00 14.00 12.00 Avg. Bias 10.00 Avg. Gnd 8.00 6.00 4.00 2.00 0.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 14 52 Falling Edge Overshoot vs. Total Dose 20.00 18.00 Falling Edge Overshoot (%) 16.00 14.00 12.00 Avg. Bias 10.00 Avg. Gnd 8.00 6.00 4.00 2.00 0.00 0 12.4 22.2 34.6 Total Dose in Krads(Si) 15 52