Total Dose Radiation Test Report MSK0002RH Radiation Tolerant High Speed, Buffer Amp March 29, 2007 (First Test) April 7, 2009 (Second Test) February 25, 2011 (Third Test) June 1, 2012 (Fourth Test) NPN Wafer Lot: J1978W#PD-10 June 13, 2014 (5th Test, PNP Wafer Lot: J1951W#SQ-7) B. Horton K. Conroy M.S. Kennedy Corporation Page 1 of 42 I. Introduction: The total dose radiation test plan for the MSK0002RH was developed to qualify the device as radiation tolerant up to 100 Krad(Si). The testing was performed beyond 100 Krad(Si) to show trends in device performance as a function of total dose. The test does not classify maximum radiation tolerance of the hybrid, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development and implementation of the total dose test plan for the MSK0002RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Dosimetry was performed prior to device irradiation and the dose rate was determined to be 120 rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source and enclosed in a Pb/Al container during irradiation to minimize dose enhancement effects. Four devices were kept under bias during irradiation. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation, the device leads were shorted together and were transported to the MSK automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed on irradiated devices, at each total dose level. The control device was tested at the 0K rad(Si) and 150K rad(Si) test points. Electrical tests were completed within one hour of irradiation. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: Based on post irradiation performance, the MSK0002RH qualifies as 100K rad hardened. Input current and output offset voltage both increases with increasing irradiation. Vout2, which is output voltage swing at maximum load, decreased with increased irradiation. However all parameters stayed well with post irradiation specifications. Page 2 of 42 MSK0002RH Biased/Unbiased Dose Rate Schedule Dosimetry Equipment Bruker Biospin # 0371 Irradiation Date 6/13/2014 Exposure Length (min:sec) Incremental Dose rads(Si) Cumulative Dose rads(Si) 7:09 7:09 7:09 51,480 51,480 51,480 51,480 102,960 154,440 Biased S/N – K632, K650, K651, K655 Unbiased S/N – K673, K680, K681, K688 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose Page 3 of 42 Page 4 of 42 Page 5 of 42 Page 6 of 42 Page 7 of 42 Page 8 of 42 Total Dose Radiation Test Report MSK 0002RH Radiation Tolerant High Speed, Buffer Amp March 29, 2007 (First Test) April 7, 2009 (Second Test) February 25, 2011 (Third Test) June 1, 2012 (Fourth Test) B. Horton C. Salce M.S. Kennedy Corporation Liverpool, NY Page 9 of 42 I. Introduction: The total dose radiation test plan for the MSK 0002RH was developed to qualify the device as radiation tolerant up to 100 Krad(Si). The testing was performed beyond 100 Krad(Si) to show trends in device performance as a function of total dose. The test does not classify maximum radiation tolerance of the hybrid, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development and implementation of the total dose test plan for the MSK 0002RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Dosimetry was performed prior to device irradiation and the dose rate was determined to be 107 rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source and enclosed in a Pb/Al container during irradiation to minimize dose enhancement effects. Four devices were kept under bias during irradiation. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation, the device leads were shorted together and were transported to the MSK automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Electrical tests were completed within one hour of irradiation. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: Based on post irradiation performance, the MSK0002RH qualifies as 100KRad hardened. Input current and output offset voltage both increases with increasing irradiation. Vout2, which is output voltage swing at maximum load, decreased with increased irradiation. However all parameters stayed well with post irradiation specifications. Page 10 of 42 MSK0002RH Biased/Unbiased Dose Rate Schedule Dosimetry Equipment Bruker Biospin # 0162 Irradiation Date 6/1/2012 Exposure Length (min:sec) Incremental Dose rads(Si) Cumulative Dose rads(Si) 0:08:01 0:08:01 0:08:01 51,467 51,467 51,467 51,467 102,934 154,401 Biased S/N – F875, F876, F877, F878 Unbiased S/N – F879, F880, F881, F882 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose Page 11 of 42 Page 12 of 42 Page 13 of 42 Page 14 of 42 Page 15 of 42 Page 16 of 42 Total Dose Radiation Test Report MSK 0002RH Radiation Tolerant High Speed, Buffer Amp March 29, 2007 (First Test) April 7, 2009 (Second Test) February 25, 2011 (Third Test) B. Horton R. Wakeman M.S. Kennedy Corporation Liverpool, NY Page 17 of 42 I. Introduction: The total dose radiation test plan for the MSK 0002RH was developed to qualify the device as radiation tolerant up to 100 Krad(Si). The testing was performed beyond 100 Krad(Si) to show trends in device performance as a function of total dose. The test does not classify maximum radiation tolerance of the hybrid, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development and implementation of the total dose test plan for the MSK 0002RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Dosimetry was performed prior to device irradiation and the dose rate was determined to be 125 rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source and enclosed in a Pb/Al container during irradiation to minimize dose enhancement effects. Four devices were kept under bias during irradiation. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation, the device leads were shorted together and were transported to the MSK automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Electrical tests were completed within one hour of irradiation. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: The devices performed very well with respect to TID tolerance. Input current and output offset voltage both increases with increasing irradiation. Vout2, which is output voltage swing at maximum load, decreased with increased irradiation. The devices also exhibited a slight voltage gain decrease. This was most pronounced from 0Krad(Si) to 100Krad(Si) with less change from occurring from 100Krad(Si) to 300Krad(Si). Page 18 of 42 MSK0002RH Biased/Unbiased Dose Rate Schedule Dosimetry Equipment Bruker Biospin # 0162 Irradiation Date 02/25/2011 Exposure Length (min:sec) Incremental Dose Cumulative rads(Si) Dose rads(Si) 6:52 51,500 51,500 6:52 51,500 103,000 6:52 51,500 154,500 6:52 51,500 206,000 13:44 103,000 309,000 Biased S/N – D202, D204, D205, D206 Unbiased S/N – D207, D212, D213, D215 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose Page 19 of 42 Page 20 of 42 Page 21 of 42 Page 22 of 42 Page 23 of 42 Page 24 of 42 Total Dose Radiation Test Report MSK 0002RH Radiation Tolerant High Speed, Buffer Amp March 29, 2007 (First Test) April 7, 2009 (Second Test) B. Erwin R. Wakeman M.S. Kennedy Corporation Liverpool, NY Page 25 of 42 I. Introduction: The total dose radiation test plan for the MSK 0002RH was developed to qualify the device as radiation tolerant up to 100 Krad(Si). The testing was performed beyond 100 Krad(Si) to show trends in device performance as a function of total dose. The test does not classify maximum radiation tolerance of the hybrid, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development and implementation of the total dose test plan for the MSK 0002RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Dosimetry was performed prior to device irradiation and the dose rate was determined to be 180 rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source and enclosed in a Pb/Al container during irradiation to minimize dose enhancement effects. Four devices were kept under bias during irradiation. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation, the device leads were shorted together and were transported to the MSK automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Electrical tests were completed within one hour of irradiation. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: The devices performed very well with respect to TID tolerance. Some shift in the output offset current was seen from 0Krad(Si) to 300Krad(Si).. Negative Vout2, which is output voltage swing at maximum load, decreased with increased irradiation. However, the devices stayed within post irradiation limits throughout all testing. The devices also exhibited a slight voltage gain decrease. This was most pronounced from 0 Krad(Si) to 50Krad(Si). Page 26 of 42 Dosimetry Irradiation Date Equipment Bruker Biospin #0141 4/07/2009 Exposure Length (min:sec) 4:46 4:46 4:46 4:46 9:33 Incremental Dose rads(Si) 51,480 51,480 51,480 51,480 103,140 Cumulative Dose rads(Si) 51,480 102,960 154,440 205,920 309,060 Biased Devices: 621, 622, 623, 624 Unbiased Devices: 625, 641, 651, 652 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose Page 27 of 42 Quiescent Current (mA) MSK0002RH Positive Quiescent Current vs. Total Dose 6.8 6.6 6.4 Avg gnd Avg bias Control 6.2 6.0 5.8 5.6 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) MSK0002RH Negative Quiescent Current vs. Total Dose Quiescent Current (mA) -5.6 -5.8 -6.0 Avg gnd Avg bias Control -6.2 -6.4 -6.6 -6.8 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Page 28 of 42 MSK0002RH Input Current vs. Total Dose 40.0 Input Current (uA) 35.0 30.0 25.0 Avg gnd Avg bias Control 20.0 15.0 10.0 5.0 0.0 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) MSK0002RH Output Offset Voltage vs. Total Dose Output Offset V (mV) 24.0 19.0 14.0 Avg gnd Avg bias Control 9.0 4.0 -1.0 -6.0 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Page 29 of 42 MSK0002RH Positive V out Swing 1 vs. Total Dose V out Swing (V pk) 13.0 12.5 12.0 Avg gnd Avg bias Control 11.5 11.0 10.5 10.0 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) MSK0002RH Negative V out Swing 1 vs. Total Dose V out Swing (V pk) -9.0 -9.5 -10.0 Avg gnd Avg bias Control -10.5 -11.0 -11.5 -12.0 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Page 30 of 42 MSK0002RH Positive V out Swing 2 vs. Total Dose 11.60 V out Swing (V pk) 11.50 11.40 11.30 Avg gnd Avg bias Control 11.20 11.10 11.00 10.90 10.80 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Page 31 of 42 MSK0002RH Negative V out Swing 2 vs. Total Dose -8.00 V out Swing (V pk) -8.50 -9.00 -9.50 Avg gnd Avg bias Control -10.00 -10.50 -11.00 -11.50 -12.00 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Gain (V/V) MSK0002RH Voltage Gain vs. Total Dose 1.00 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.90 Avg gnd Avg bias Control 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Page 32 of 42 MSK0002RH Rise Time vs. Total Dose 9.0 Rise Time (nS) 8.5 8.0 Avg gnd Avg bias Control 7.5 7.0 6.5 6.0 0K 50K 100K 150K 200K 300K Total dose (rad(Si)) Page 33 of 42 Total Dose Radiation Test Report MSK 0002RH Radiation Tolerant High Speed, Buffer Amp March 29, 2007 J. Douglas B. Erwin P. Musil M.S. Kennedy Corporation Liverpool, NY Page 34 of 42 I. Introduction: The total dose radiation test plan for the MSK 0002RH was developed to qualify the device as radiation tolerant up to 100 Krad(Si). The testing was performed beyond 100 Krad(Si) to show trends in device performance as a function of total dose. The test does not classify maximum radiation tolerance of the hybrid, but simply offers designers insight to the critical parameter-shifts up to the specified total dose level. MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development and implementation of the total dose test plan for the MSK 0002RH. II. Radiation Source: Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation source. Dosimetry was performed prior to device irradiation and the dose rate was determined to be 108 rads(Si)/sec. The total dose schedule can be found in Table I. III. Test Setup: All test samples were subjected to Group A Electrical Test in accordance with the device data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test platform verification, one control device was tested at 25°C. The devices were vertically aligned with the radiation source and enclosed in a Pb/Al container during irradiation to minimize dose enhancement effects. Four devices were kept under bias during irradiation. Four devices had all leads grounded during irradiation for the unbiased condition. After each irradiation, the device leads were shorted together and were transported to the MSK automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed on irradiated devices, as well as the control device, at each total dose level. Electrical tests were completed within one hour of irradiation. IV. Data: All performance curves are averaged from the test results of the biased and unbiased devices respectively. V. Summary: The devices performed very well with respect to TID tolerance. Some negative shift in the input offset current was seen from 0Krad(Si) to 100Krad(Si). The devices stabilized and input offset current stayed fairly constant with a slightly negative shift from 100Krad(Si) up to 300Krad(Si). Vout2, which is output voltage swing at maximum load, decreased with increased irradiation. The decrease occurred between 0Krad(Si) and 100Krad(Si). This parameter also stabilized at higher radiation doses. The devices also exhibited a slight voltage gain decrease. Again, this was most pronounced from 50Krad(Si) to 100Krad(Si) with less change from occurring from 100Krad(Si) to 300Krad(Si). Page 35 of 42 Irradiation Date 3/29/2007 Dosimetry Equipment Bruker Biospin #0141 Exposure Incremental Length Dose (min:sec) rads(Si) 7:57 51,516 7:57 51,516 7:57 51,516 7:57 51,516 7:57 51,516 7:57 51,516 Cumulative Dose rads(Si) 51,516 103,032 154,548 206,064 257,580 309,096 Table 1 Dose Time, Incremental Dose and Total Cumulative Dose Page 36 of 42 Positive IQ vs. Total Dose 7.00 6.80 Quiescent Current (mA) 6.60 6.40 6.20 Avg Bias 6.00 Avg Gnd Control 5.80 5.60 5.40 5.20 5.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Negative IQ vs. Total Dose -5.00 -5.20 Quiescent Current (mA) -5.40 -5.60 -5.80 Avg Bias -6.00 Avg Gnd Control -6.20 -6.40 -6.60 -6.80 -7.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Page 37 of 42 Offset Current vs. Total Dose 0.00 -2.00 Offset Current (uA) -4.00 -6.00 Avg Bias Avg Gnd Control -8.00 -10.00 -12.00 -14.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Offset Voltage vs. Total Dose 0.00 -2.00 Offset Voltage (mV) -4.00 -6.00 Avg Bias Avg Gnd Control -8.00 -10.00 -12.00 -14.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Page 38 of 42 Vout 1 Positive vs. Total Dose 15.00 14.50 14.00 Vout (Volts-peak) 13.50 13.00 Avg Bias 12.50 Avg Gnd Control 12.00 11.50 11.00 10.50 10.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Page 39 of 42 Vout 1 Negative vs. Total Dose -10.00 -10.50 -11.00 Vout (Volts-peak) -11.50 -12.00 Avg Bias -12.50 Avg Gnd Control -13.00 -13.50 -14.00 -14.50 -15.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Vout 2 Positive vs. Total Dose 15.00 14.00 Vout (Volts-peak) 13.00 12.00 Avg Bias Avg Gnd Control 11.00 10.00 9.00 8.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Page 40 of 42 Vout 2 Negative vs. Total Dose -8.00 -9.00 Vout (Volts-peak) -10.00 Avg Bias -11.00 Avg Gnd Control -12.00 -13.00 -14.00 -15.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Rise Time vs. Total Dose 8.00 7.50 Rise Time (nS) 7.00 6.50 Avg Bias 6.00 Avg Gnd Control 5.50 5.00 4.50 4.00 0 50 100 150 200 250 300 Total Dose In Krad(Si) Page 41 of 42 Gain vs. Total Dose 1.00 0.99 0.98 Gain (V/V) 0.97 0.96 Avg Bias 0.95 Avg Gnd Control 0.94 0.93 0.92 0.91 0.90 0 50 100 150 200 250 300 Total Dose In Krad(Si) Page 42 of 42