tid report - M.S. Kennedy Corp.

Total Dose Radiation Test Report
MSK 4304RH
3 - Phase Motor Drive Hybrid
June 14, 2007 (1st test)
November 6, 2013 (2nd test: IC Wafer Lot: DJA6ENC
Transistor Wafer Lot: BA1016MFA #16)
B. Horton
R. Wakeman
M.S. Kennedy Corporation
Liverpool, NY
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I.
Introduction:
The total dose radiation test plan for the MSK 4304 RH was developed to qualify the devices as
RAD Hard to 300 KRAD (Si). The testing was performed beyond 300 KRAD (Si) to show trends
in device performance as a function of total dose. The test does not classify maximum radiation
tolerance of the device, but simply offers designers insight to the critical parameter-shifts up to
the specified total dose level.
MIL-STD-883 Method 1019.7 and ASTM F1892-06 were used as guidelines in the development
and implementation of the total dose test plan for the MSK 4304 RH.
II.
Radiation Source:
Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60 radiation
source. The dose rate was determined to be 88 Rads(Si)/sec. The total dose schedule can be
found in Table I.
III.
Test Setup:
All test samples were subjected to Group A Electrical Test at 25°C in accordance with the device
data sheet. In addition, all devices received 320 hours of burn-in per MIL-STD-883 Method 1015.
For test platform verification, one control device was tested at 25°C. Four devices (12 samples,
See para. IV) were then tested at 25°C, prior to irradiation, and were found to be within
acceptable test limits.
The devices were vertically aligned with the radiation source and enclosed in a lead/aluminum
container during irradiation. Two devices (six samples) were biased during irradiation. Two
devices (six samples) had all leads grounded during irradiation for the unbiased condition.
After each irradiation the device leads were shorted together and transported to the MSK
automatic electrical test platform and tested IAW MSK device data sheet. Testing was performed
on irradiated devices, as well as the control device, at each total dose level. Electrical tests were
completed within one hour of irradiation. Devices were subjected to subsequent radiation doses
within two hours of removal from the radiation field.
IV.
Data:
Each device contains three identical and independently operating circuits. For each MSK4304RH
tested the effective sample size is three. All performance curves are averaged from the test
results of the biased and unbiased devices, respectively. If required, full test data can be
obtained by contacting M.S. Kennedy Corporation.
V.
Summary:
Based on the test data recorded during radiation testing, the MSK4304RH qualified as a 300
KRAD (Si) radiation hardened device. All performance curves stayed well within specification up
to the maximum test dose, 450 KRAD (Si) TID
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MSK 4304RH Biased/Unbiased Dose Rate
Schedule
Dosimetry Equipment
Bruker Biospin # 0162
Irradiation Date
11/6/13
Exposure
Incremental Dose
Length
rads(Si)
(min:sec)
0:19:31
0:09:46
0:29:16
0:29:16
103,048
51,568
154,528
154,528
Cumulative
Dose
rads(Si)
103,048
154,616
309,144
463,672
Biased S/N – 0154, 0155
Unbiased S/N – 0156, 0157
Table 1
Dose Time, Incremental Dose and Total Cumulative Dose
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Total Dose Radiation Test Report
MSK 4304RH
3 - Phase Motor Drive Hybrid
June 14, 2007
J. Douglas
B. Erwin
M.S. Kennedy Corporation
Liverpool, NY
Page 13 of 23
I.
Introduction:
The total dose radiation test plan for the MSK 4304RH was developed to qualify the device as
a radiation tolerant device to 300 Krad(Si). The testing was performed up to 450 Krad to show
trends in device performance as a function of total dose.
MIL-STD-883 Method 1019.7 and ASTM F1892-98 were used as guidelines in the
development and implementation of the total dose test plan for the MSK 4304RH.
II.
Radiation Source:
Total dose was performed at the University of Massachusetts, Lowell, using a cobalt 60
radiation source. Alanine dosimetry was performed and the dose rate was determined to be
118 Rads(Si)/sec. The total dose schedule can be found in Table I.
III. Test Setup:
All test samples were subjected to Group A Electrical Test in accordance with MSK4304RH
Electrical Test Procedure 1702-12750 Rev -. In addition, all devices received 320 hours of
burn-in per MIL-STD-883 Method 1015 and were electrically tested prior to irradiation. For test
platform verification, one control device was tested at 25°C.
The devices were vertically aligned with the radiation source and enclosed in a lead/aluminum
container during irradiation. Four devices were kept under bias during irradiation. Four
devices had all leads grounded during irradiation for the unbiased condition.
After each irradiation the device leads were held electrically common and the devices were
transported to the MSK electrical test platform and tested IAW the MSK 4304RH Electrical Test
Procedure 1702-12750 Rev -. Testing was performed on irradiated devices, as well as the
control device, at each total dose level. Electrical tests were completed within one hour of
irradiation.
IV. Data:
All performance curves are averaged from the test results of the biased and unbiased devices
respectively.
V. Summary:
Based on the test data recorded during radiation testing, the MSK 4304RH qualified as a
300 Krad(Si) radiation tolerant device. All test parameters stayed within specification up to and
beyond 450 Krad(Si) TID.
Page 14 of 23
Dosimetry Equipment:
Bruker Biospin #0141
Dose Rate = 118 Rads(Si)/Sec
Device Date Code 0721
Board Identification MSK 4304 GND
Exposure
Length
(min:sec)
Incremental Dose
Rads(Si)
07:17
Testing Performed:
6/12/2007
Board Identification 4304 BIAS
Cumulative Dose
Rads(Si)
Exposure
Length
(min:sec)
Incremental Dose
Rads(Si)
Cumulative Dose
Rads(Si)
51,556
51,556
07:17
51,556
51,556
07:17
51,556
103,132
07:17
51,556
103,132
07:17
51,556
154,698
07:17
51,556
154,698
07:17
51,556
206,264
07:17
51,556
206,264
14:33
103,014
309,278
14:33
103,014
309,278
14:33
103,014
412,292
14:33
103,014
412,292
14:33
103,014
515,306
14:33
103,014
515,306
Serial #’s: 3645, 3646, 3647 & 3648
Serial #’s: 3650, 3651, 3652 & 3654
Table I
Dose Time, Incremental Dose and Total Cumulative Dos
+Vcc current
+Vcc = +15V
0.1
0.09
0.08
0.07
mA
0.06
Avg gnd
Avg bias
Control
0.05
0.04
0.03
0.02
0.01
0
0K
50K
100K
150K
200K
300K
400K
450K
Total dose (rad(SI))
Page 15 of 23
+VB Current
+VB = +15V
0.1
0.09
0.08
0.07
mA
0.06
Avg gnd
Avg bias
Control
0.05
0.04
0.03
0.02
0.01
0
0K
50K
100K
150K
200K
300K
400K
450K
Total dose (rad(SI))
+VDD Current
+VDD = +15V
4.9
4.7
mA
4.5
Avg gnd
Avg bias
Control
4.3
4.1
3.9
3.7
3.5
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
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UVLO
10.75
10.7
10.65
10.6
V
10.55
Avg gnd
Avg bias
Control
10.5
10.45
10.4
10.35
10.3
10.25
0K
50K
100K 150K 200K 300K 400K 450K
Total dose (rad(SI))
High Side Leakage
VD = 80V
3
2.5
uA
2
Avg gnd
Avg bias
Control
1.5
1
0.5
0
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
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Low Side Leakage
VD = 80V
3
2.5
uA
2
Avg gnd
Avg bias
Control
1.5
1
0.5
0
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
High Side VDS(on)
IDS = 10A
0.83
0.81
Avg gnd
Avg Bias
Control
V
0.79
0.77
0.75
0.73
0K
50K
100K 150K 200K 300K 400K 450K
Total Dose (rad(SI))
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Low Side VDS(on)
IDS = 10A
0.55
0.53
Avg gnd
Avg bias
Control
V
0.51
0.49
0.47
0.45
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
High Side Logic Low
Input Threshold
V
2.4
2.2
2
1.8
1.6
1.4
Avg gnd
Avg bias
Control
1.2
1
0.8
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
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V
High Side Logic High
Input Threshold
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
Avg gnd
Avg bias
Control
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
V
Low Side Logic Low
Input Threshold
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
Avg gnd
Avg bias
Control
0K
50K
100K 150K 200K 300K 400K 450K
Total Dose (rad(SI))
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V
Low Side Logic High
Input Threshold
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
Avg gnd
Avg bias
Control
0K
50K
100K
150K
200K
300K
400K
450K
Total Dose (rad(SI))
High Side Logic Input Current
Vin = 0V
0
-0.5
uA
-1
Avg gnd V = 0V
Avg bias V = 0V
Control
-1.5
-2
-2.5
-3
0K
50K 100K 150K 200K 300K 400K 450K
Total Dose (rad(SI))
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High Side Logic Input Current
Vin = 5V
26
25.5
uA
25
Avg gnd V = 5V
Avg bias V = 5V
Control
24.5
24
23.5
23
0K
50K 100K 150K 200K 300K 400K 450K
Total Dose (rad(SI))
Low Side Logic Input Current
Vin = 0V
0
-0.5
uA
-1
Avg gnd V = 0V
Avg bias V = 0V
Control
-1.5
-2
-2.5
-3
0K
50K 100K 150K 200K 300K 400K 450K
Total Dose (rad(SI))
Page 22 of 23
Low Side Logic Input Current
Vin = 5V
26
25.5
uA
25
Avg gnd V = 5V
Avg bias V = 5V
Control
24.5
24
23.5
23
0K
50K 100K 150K 200K 300K 400K 450K
Total Dose (rad(SI))
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