AO6810 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. S2 Maximum 30 Units V ±20 V 12 1.15 W 0.73 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2.4 PD TA=70°C Thermal Characteristics each FET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C G2 3.1 TA=25°C Power Dissipation A D2 RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W www.aosmd.com AO6810 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 12 TJ=55°C VGS=10V, ID=3.1A 4.5 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 0.79 200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.1A nA 3 V 77 120 mΩ mΩ S 1 V 2.5 A 240 pF 42 pF 20 pF 2.5 3.2 Ω 6.6 8.7 nC 3.2 4 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs 9.5 Qrr Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs 3.6 VGS=10V, VDS=15V, RL=4.7Ω, RGEN=3Ω 100 78 VDS=5V, ID=3.1A Forward Transconductance µA A 88 gFS Coss 1.9 VGS=4.5V, ID=2A VSD IS 5 54 TJ=125°C Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ 1.3 nC 1.6 nC 3.4 ns 2.5 ns 13.2 ns 1.8 ns 13 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: Sept 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha and Omega Semiconductor, Ltd. www.aosmd.com AO6810 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 10 15 10V 8V 12 5V 8 6V VDS=5V 4.5V 6 9 6 ID(A) ID (A) 4V 4 3.5V 125°C 2 3 25°C VGS=3V 0 0 0 1 2 3 4 1.5 5 2 2.5 3.5 4 4.5 5 5.5 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 120 1.8 100 Normalized On-Resistance 110 RDS(ON) (mΩ) 3 VGS=4.5V 90 80 70 60 50 VGS=10V 40 VGS=10V ID=3.1A 1.6 1.4 VGS=4.5V ID=2A 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 250 ID=3.1A 200 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 1.0E-01 150 125°C 100 1.0E-02 25°C 1.0E-03 50 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6810 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 400 10 VDS=15V ID=3.1A Capacitance (pF) VGS (Volts) 8 6 4 2 300 Ciss 200 Coss 0 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C RDS(ON) limited 1ms 15 10µs 100µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss 100 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. www.aosmd.com