AON4604 Complementary Enhancement Mode Field Effect Transistor General Description The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel p-channel VDS (V) = 20V ID = 5.4A -20V -3.8A RDS(ON) < 42mΩ RDS(ON) < 52mΩ RDS(ON) < 72mΩ < 90mΩ (VGS = ±4.5V) < 120mΩ (VGS = ±2.5V) < 170mΩ (VGS = ±1.8V) (VGS= ±4.5V) D1 S1 G1 S2 G2 DFN3X2-8L 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G2 G1 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 Continuous Drain Current A TA=25°C ID IDM TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. TJ, TSTG ±8 V -3.8 4.3 -3.0 15 -15 1.9 1.9 1.2 -55 to 150 -55 to 150 RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State Units V 5.4 Symbol t ≤ 10s Steady-State Steady-State Max p-channel -20 1.2 PD TA=70°C Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 S1 RθJA RθJL A W °C Typ 51.5 82 37 Max 65 100 50 Units °C/W °C/W °C/W Typ 51.5 82 37 Max 65 100 50 Units °C/W °C/W °C/W www.aosmd.com AON4604 n-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 20 IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 15 TJ=55°C VGS=4.5V, ID=5.4A TJ=125°C Static Drain-Source On-Resistance VGS=2.5V, ID=4.8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=4.5V, VDS=10V, ID=5.4A VGS=5V, VDS=10V, RL=1.9Ω, RGEN=6Ω 1 V 34 42 50 70 43 52 mΩ 72 mΩ 11 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current nA A 57 VSD 100 0.7 VGS=1.8V, ID=4A Forward Transconductance µA 5 VDS=5V, ID=5.4A gFS Units V 1 Zero Gate Voltage Drain Current IS Max VDS=16V, VGS=0V IDSS RDS(ON) Typ mΩ S 0.8 1 V 2.5 A 436 pF 66 pF 44 pF 3 Ω 6.5 nC 0.8 nC 2.1 nC 7 ns 11.2 ns 36.5 ns 12.5 ns ns nC trr Body Diode Reverse Recovery Time IF=5.4A, dI/dt=100A/µs 15.2 Qrr Body Diode Reverse Recovery Charge IF=5.4A, dI/dt=100A/µs 4.7 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in The SOA curve provides a single pulse rating. Rev0 : October 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4604 TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 6 16 8V 4.5V VDS=5V 5 2V 4 3V 2.5V 8 ID(A) ID (A) 12 3 2 125°C VGS=1.5V 4 -40°C 1 25°C 0 0 0 1 2 3 4 5 0 0.5 100 RDS(ON) (mΩ) Normalized On-Resistance 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 1.5 2 VGS=2.5V ID=4.8A 1.6 VGS=1.8V ID=4A 1.4 VGS=4.5V ID=5.4A 1.2 1 0.8 0.6 0.4 0 4 8 12 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 125°C 90 1E+00 80 ID=5.4A 1E-01 70 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 125°C 60 50 25°C 1E-02 1E-03 40 -40°C 25°C 1E-04 30 1E-05 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON4604 TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=5.4A 4 3 2 600 Ciss 400 Coss 200 Crss 1 0 0 0 2 4 6 0 8 100.00 15 20 20 TJ(Max)=150°C TA=25°C 10µs 10.00 15 100µs RDS(ON) limited 1.00 TJ(Max)=150°C TA=25°C 0.10 DC Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 10ms 0.1s 1s 10s 0.1 1 10 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 5 0.01 ZθJA Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4604 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 VGS=-4.5V, ID=-3.8A TJ=125°C Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 90 102 125 A mΩ 120 mΩ 170 mΩ -1 V -2.5 A VDS=-5V, ID=-3.8A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 73 95 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss V 130 Forward Transconductance Output Capacitance nA -1 VGS=-2.5V, ID=-3.3A VSD Coss ±100 -0.63 VGS=-1.8V, ID=-2.8A gFS IS Units µA -5 VGS(th) Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-10V, f=1MHz 7 -0.83 S 540 pF 72 pF 49 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.8A 12 pF Ω 18 5.9 nC 0.9 nC Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 11.5 ns tr Turn-On Rise Time ns Turn-Off DelayTime VGS=-4.5V, VDS=-10V, RL=2.6Ω, RGEN=3Ω 15.5 tD(off) 37.5 ns tf Turn-Off Fall Time 23 ns trr Body Diode Reverse Recovery Time IF=-3.8A, dI/dt=100A/µs 23.1 Qrr Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/µs 8.9 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev0 : October 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4604 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V VDS=-5V -3.0V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 25°C 2 5 VGS=-1.5V 125°C -40°C 0 0 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 5 0 150 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 1.8 Normalized On-Resistance VGS=-1.8V 125 RDS(ON) (mΩ) 0.5 100 VGS=-2.5V 75 VGS=-4.5V VGS=-2.5V ID=-3.3A 1.6 1.4 VGS=-1.8V ID=-2.8A 1.2 VGS=-4.5V ID=-3.8A 1 0.8 50 0 2 4 0.6 6 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 150 1E+01 1E+00 130 ID=-3.8A 1E-01 125°C 110 -IS (A) RDS(ON) (mΩ) -25 125°C 90 1E-02 1E-03 25°C 1E-04 70 -40°C 25°C 1E-05 50 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON4604 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-3.8A Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 600 400 Crss 200 1 Coss 0 0 0 1 2 3 4 5 6 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 100.00 20 20 TJ(Max)=150°C TA=25°C 10µs 10.00 15 Power (W) -ID (Amps) 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100µs RDS(ON) limited 1.00 0.10 DC TJ(Max)=150°C TA=25°C 1ms 10ms 0.1s 10s 5 0 0.001 0.01 0.1 1 10 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com