AOSMD AON4604

AON4604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4604 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4604 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
n-channel
p-channel
VDS (V) = 20V
ID = 5.4A
-20V
-3.8A
RDS(ON) < 42mΩ
RDS(ON) < 52mΩ
RDS(ON) < 72mΩ
< 90mΩ
(VGS = ±4.5V)
< 120mΩ (VGS = ±2.5V)
< 170mΩ (VGS = ±1.8V)
(VGS= ±4.5V)
D1
S1
G1
S2
G2
DFN3X2-8L
1
2
3
4
8
7
6
5
D1
D1
D2
D2
D2
G2
G1
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
20
VGS
Gate-Source Voltage
±8
Continuous Drain
Current A
TA=25°C
ID
IDM
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
±8
V
-3.8
4.3
-3.0
15
-15
1.9
1.9
1.2
-55 to 150
-55 to 150
RθJA
RθJL
Symbol
t ≤ 10s
Steady-State
Steady-State
Units
V
5.4
Symbol
t ≤ 10s
Steady-State
Steady-State
Max p-channel
-20
1.2
PD
TA=70°C
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
S2
S1
RθJA
RθJL
A
W
°C
Typ
51.5
82
37
Max
65
100
50
Units
°C/W
°C/W
°C/W
Typ
51.5
82
37
Max
65
100
50
Units
°C/W
°C/W
°C/W
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AON4604
n-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
20
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
15
TJ=55°C
VGS=4.5V, ID=5.4A
TJ=125°C
Static Drain-Source On-Resistance
VGS=2.5V, ID=4.8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=4.5V, VDS=10V, ID=5.4A
VGS=5V, VDS=10V, RL=1.9Ω,
RGEN=6Ω
1
V
34
42
50
70
43
52
mΩ
72
mΩ
11
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
nA
A
57
VSD
100
0.7
VGS=1.8V, ID=4A
Forward Transconductance
µA
5
VDS=5V, ID=5.4A
gFS
Units
V
1
Zero Gate Voltage Drain Current
IS
Max
VDS=16V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
0.8
1
V
2.5
A
436
pF
66
pF
44
pF
3
Ω
6.5
nC
0.8
nC
2.1
nC
7
ns
11.2
ns
36.5
ns
12.5
ns
ns
nC
trr
Body Diode Reverse Recovery Time
IF=5.4A, dI/dt=100A/µs
15.2
Qrr
Body Diode Reverse Recovery Charge IF=5.4A, dI/dt=100A/µs
4.7
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
The SOA curve provides a single pulse rating.
Rev0 : October 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
6
16
8V
4.5V
VDS=5V
5
2V
4
3V
2.5V
8
ID(A)
ID (A)
12
3
2
125°C
VGS=1.5V
4
-40°C
1
25°C
0
0
0
1
2
3
4
5
0
0.5
100
RDS(ON) (mΩ)
Normalized On-Resistance
1.8
VGS=1.8V
80
VGS=2.5V
60
40
VGS=4.5V
20
1.5
2
VGS=2.5V
ID=4.8A
1.6
VGS=1.8V
ID=4A
1.4
VGS=4.5V
ID=5.4A
1.2
1
0.8
0.6
0.4
0
4
8
12
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
1E+01
125°C
90
1E+00
80
ID=5.4A
1E-01
70
IS (A)
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
125°C
60
50
25°C
1E-02
1E-03
40
-40°C
25°C
1E-04
30
1E-05
20
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON4604
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VGS (Volts)
Capacitance (pF)
VDS=10V
ID=5.4A
4
3
2
600
Ciss
400
Coss
200
Crss
1
0
0
0
2
4
6
0
8
100.00
15
20
20
TJ(Max)=150°C
TA=25°C
10µs
10.00
15
100µs
RDS(ON)
limited
1.00
TJ(Max)=150°C
TA=25°C
0.10
DC
Power (W)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
10ms
0.1s
1s
10s
0.1
1
10
0
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
10
5
0.01
ZθJA Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AON4604
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
VGS=-4.5V, ID=-3.8A
TJ=125°C
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
90
102
125
A
mΩ
120
mΩ
170
mΩ
-1
V
-2.5
A
VDS=-5V, ID=-3.8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
73
95
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
V
130
Forward Transconductance
Output Capacitance
nA
-1
VGS=-2.5V, ID=-3.3A
VSD
Coss
±100
-0.63
VGS=-1.8V, ID=-2.8A
gFS
IS
Units
µA
-5
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-16V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-10V, f=1MHz
7
-0.83
S
540
pF
72
pF
49
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3.8A
12
pF
Ω
18
5.9
nC
0.9
nC
Qgd
Gate Drain Charge
1.9
nC
tD(on)
Turn-On DelayTime
11.5
ns
tr
Turn-On Rise Time
ns
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=2.6Ω,
RGEN=3Ω
15.5
tD(off)
37.5
ns
tf
Turn-Off Fall Time
23
ns
trr
Body Diode Reverse Recovery Time
IF=-3.8A, dI/dt=100A/µs
23.1
Qrr
Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/µs
8.9
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev0 : October 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4604
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
6
15
-4.5V
VDS=-5V
-3.0V
-2.5V
-8V
4
10
-ID(A)
-ID (A)
-2.0V
25°C
2
5
VGS=-1.5V
125°C
-40°C
0
0
0
1
2
3
4
-VDS (Volts)
Figure 1: On-Region Characteristics
5
0
150
1
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
2
1.8
Normalized On-Resistance
VGS=-1.8V
125
RDS(ON) (mΩ)
0.5
100
VGS=-2.5V
75
VGS=-4.5V
VGS=-2.5V
ID=-3.3A
1.6
1.4
VGS=-1.8V
ID=-2.8A
1.2
VGS=-4.5V
ID=-3.8A
1
0.8
50
0
2
4
0.6
6
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
150
1E+01
1E+00
130
ID=-3.8A
1E-01
125°C
110
-IS (A)
RDS(ON) (mΩ)
-25
125°C
90
1E-02
1E-03
25°C
1E-04
70
-40°C
25°C
1E-05
50
0
2
4
6
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
8
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON4604
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS=-10V
ID=-3.8A
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
600
400
Crss
200
1
Coss
0
0
0
1
2
3
4
5
6
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100.00
20
20
TJ(Max)=150°C
TA=25°C
10µs
10.00
15
Power (W)
-ID (Amps)
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
RDS(ON)
limited
1.00
0.10
DC
TJ(Max)=150°C
TA=25°C
1ms
10ms
0.1s
10s
5
0
0.001
0.01
0.1
1
10
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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