Datasheet

AO6420
60V N-Channel MOSFET
General Description
Product Summary
The AO6420 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = 60V
ID = 4.2A (VGS = 10V)
RDS(ON) < 60mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A,F
Pulsed Drain Current
TA=70°C
ID
B
V
Junction and Storage Temperature Range
20
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.28
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
2.00
PD
TA=70°C
Maximum Junction-to-Lead C
±20
3.4
IDM
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
4.2
TA=25°C
Power Dissipation
Maximum
60
RθJA
RθJL
Typ
48
74
35
°C
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
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AO6420
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, ID=4.2A
TJ=125°C
VGS=4.5V, ID=3A
gFS
Forward Transconductance
VDS=5V, ID=4.2A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
µA
100
nA
2.3
3
V
50
60
A
85
60
mΩ
75
mΩ
1
V
3
A
13
0.78
450
VGS=0V, VDS=30V, f=1MHz
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
IGSS
RDS(ON)
Typ
S
540
pF
60
pF
25
pF
Ω
1.65
2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.5
11.5
nC
Qg(4.5V) Total Gate Charge
4.3
5.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=4.2A
VGS=10V, VDS=30V, RL=7Ω,
RGEN=3Ω
IF=4.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
1.6
nC
2.2
nC
5.1
7
ns
2.6
4
ns
15.9
20
ns
2
3
ns
25.1
35
ns
nC
28.7
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev2: Feb. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AO6420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
VDS=5V
10.0V
5.0V
15
125°C
ID(A)
ID (A)
10
4.5V
10
4.0V
5
5
25°C
VGS=3.5V
0
0
1
2
3
4
0
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics
100
2
Normalized On-Resistance
90
80
RDS(ON) (mΩ
Ω)
2.5
VGS=4.5V
70
60
50
VGS=10V
40
30
20
VGS=10
ID=4.2A
1.8
1.6
1.4
VGS=4.5V
ID=3A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
1.0E+01
140
1.0E+00
120
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
ID=4.2A
125°C
100
125°C
1.0E-02
25°C
1.0E-03
80
25°C
60
1.0E-04
1.0E-05
40
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO6420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
800
VDS=30V
ID= 4.2A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
200
Crss
0
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C
TA=25°C
10.0
30
10µs
RDS(ON)
limited
1.0
0.1
100µs
1ms
DC
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
VDS (Volts)
10
Power (W)
ID (Amps)
10
20
10ms
0.1s
1s
10
10s
0
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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