AO4443 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4443 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4443 is Pb-free (meets ROHS & Sony 259 specifications). AO4443L is a Green Product ordering option. AO4443 and AO4443L are electrically identical. VDS (V) = -40V ID = -6.5 A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) RDS(ON) < 63mΩ (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -6.5 TA=25°C Power Dissipation A Maximum -40 RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W AO4443 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 ±100 nA -3 V 33.3 42 54 68 VGS=-4.5V, I D=-5A 48 63 VDS=-5V, ID=-6A 14 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA -1.9 VGS=-10V, I D=-6A Coss Units V TJ=55°C IGSS IS Max VDS=-32V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, I D=-6A A -0.75 mΩ mΩ S -1 V -6 A 657 pF 143 pF 63 pF 6.5 Ω 14.2 nC 7.1 nC 2.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.1 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-20V, RL=3.7Ω, RGEN=3Ω 8 ns 26.5 ns 11.5 ns Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 21.9 Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 14.9 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet≤t≤10s 10sthermal thermalresistance resistancerating. rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 1 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4443 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 -5.0V -4.5V 25 15 -ID(A) -ID (A) -4.0V -6.0V 20 VDS=-5V 20 -3.5V 15 10 125°C 10 VGS=-3.0V 25°C 5 5 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.8 Normalized On-Resistance 55 50 RDS(ON) (mΩ) 2 VGS=-4.5V 45 40 35 VGS=-10V 30 25 20 0 2 4 6 8 1.6 VGS=-10V ID=-6A 1.4 VGS=-4.5V ID=-5A 1.2 1 0.8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 140 120 1.0E+00 100 1.0E-01 80 -IS (A) RDS(ON) (mΩ) ID=-6A 125°C 60 1.0E-02 1.0E-03 1.0E-04 25°C 40 125°C 25°C 1.0E-05 20 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4443 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1000 VDS=-40V ID=-6A 800 Capacitance (pF) -VGS (Volts) 8 Ciss 6 4 600 400 Coss Crss 200 2 0 0 0 3 6 9 12 0 15 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 40 RDS(ON) limited 1ms 10ms 1.0 0.1s 1s 10s 40 TJ(Max)=150°C TA=25°C 20 10 DC 0 0.001 0.1 0.1 30 30 10µs 100µs Power (W) -ID (Amps) TJ(Max)=150°C, TA=25°C 10.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000