AO4F800 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4F800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AOF800 is Pb-free (meets ROHS & Sony 259 specifications). AOF800L is a Green Product ordering option. AOF800 and AOF800L are electrically identical. D1 D1 G1 G2 S2 S2 S2 14 13 12 11 10 9 8 1 2 3 4 5 6 7 S1 S1 D2/S1 D2/S1 D2/S1 D2/S1 D2/S1 D1 SOIC-14 Q2 G1 G2 S1 B IDM TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range PD TJ, TSTG Parameter: Thermal Characteristics MOSFET Q1 t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead Symbol Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-AmbientA Symbol A Maximum Junction-to-Ambient C Maximum Junction-to-Lead D2 Q1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C A Current ID TA=70°C Pulsed Drain Current Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.3A (VGS = 10V) ID=17.7A RDS(ON) < 18mΩ < 6.5mΩ (VGS = 10V) < 8.5mΩ (VGS = 4.5V) RDS(ON) < 27mΩ Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. RθJA RθJL RθJA RθJL S2 Max Q1 30 Max Q2 30 Units V ±20 ±20 V 8.3 6.7 17.7 13 A 30 80 2 3 1.28 -55 to 150 2.1 -55 to 150 Typ 47 83 23 Max 62.5 110 40 Units Typ Max Units 31 40 59 16 75 24 W °C °C/W °C/W AO4F800 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.3A TJ=125°C VGS=4.5V, ID=6.7A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current VDS=5V, ID=8.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Max Units V VDS=24V, VGS=0V IGSS IS Typ VGS=0V, VDS=15V, f=1MHz 18 1.8 100 nA 3 V A 15 18 21 25 22 27 mΩ 1 V 3 A 23 0.76 VGS=10V, VDS=15V, ID=8.3A mΩ S 1040 1250 pF 190 pF 120 VGS=0V, VDS=0V, f=1MHz µA 0.7 pF 0.85 Ω 19.8 24 nC 9.8 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 3.5 tD(on) Turn-On DelayTime 5.2 6.25 ns tr Turn-On Rise Time 5 6 ns tD(off) Turn-Off DelayTime 20.5 25 ns tf Turn-Off Fall Time 3.6 4.3 ns trr Body Diode Reverse Recovery time IF=8.3A, dI/dt=100A/µs 15 18 ns Qrr Body Diode Reverse Recovery charge IF=8.3A, dI/dt=100A/µs 8 10 nC VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.5 nC nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4F800 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) 30 10V 25 25 3.5V 4.5V 15 10 125°C 15 19 10 VGS=3V 5 VDS=5V 20 ID(A) 20 ID (A) 30 4V 5 VDS=5V, ID=8.8A 0 0 0 1 2 3 4 1 5 1.5 2.5 VGS=4.5V Normalized On-Resistance VGS=10V, VDS=15V, ID=8.8A 22 18 3 3.5 ID=8.3A 1.6 VGS=10V 1.5 1.4 VGS=10V, VDS=15V, RL=1.7Ω,1.3 RGEN=3Ω VGS=10V 14 IF=8.8A, dI/dt=100A/µs 0 5 10 15 20 25 VGS=4.5V 1.2 1.1 1 IF=8.8A, dI/dt=100A/µs 10 4 180 110 0.7 1.7 26 RDS(ON) (mΩ) 2 VGS (Volts) 1040 Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 0.9 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 1.0E+01 60 1.0E+00 ID=8.3A 50 125°C 1.0E-01 40 IS (A) RDS(ON) (mΩ) 24 25°C 30 1.0E-02 25°C 1.0E-03 125°C 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4F800 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) 1500 10 VDS=15V ID=8.3A Capacitance (pF) VGS (Volts) 8 1250 6 4 Ciss 1000 2 750 500 Coss 19 Crss 24 250 VDS=5V, ID=8.8A 0 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 ID (A) 1.0 RDS(ON) limited VDS (Volts) 30 TJ(Max)=150°C TA=25°C 20 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 180 110 0.7 0 0.001 IF=8.8A, dI/dt=100A/µs 10 100 1 25 10 10s DC IF=8.8A, dI/dt=100A/µs 0.1 20 VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω 1s 0.1 15 VGS=10V, V10µs DS=15V, ID=8.8A 30 100µs 10ms 0.1s 10 40 Power (W) 1ms 5 VDS (Volts) Figure 8: Capacitance 1040 Characteristics TJ(Max)=150°C, TA=25°C 10.0 ZθJA Normalized Transient Thermal Resistance f=1MHz VGS=0V In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4F800 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=17.7A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=4.5V, ID=13A 6.8 8.5 VDS=5V, ID=17.7A 82 0.7 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=17.7A V A 7270 pF 0.45 0.54 Ω 103 124 nC 48 57 nC 15 Turn-On DelayTime 12 Turn-Off Fall Time 1 4.5 pF Gate Drain Charge tf S pF tD(on) Turn-Off DelayTime mΩ 355 Qgd Turn-On Rise Time mΩ 638 Gate Source Charge tr V A Qgs tD(off) 2.5 9.1 DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 6.5 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 1.8 µA 100 5.4 Forward Transconductance Output Capacitance 5 7.56 TJ=125°C VSD Crss V TJ=55°C gFS Units 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=24V, VGS=0V IDSS IS Typ 18 nC nC 14 ns VGS=10V, VDS=15V, RL=0.85Ω, RGEN=3Ω 8 10 ns 51.5 62 ns 8.8 11 ns IF=17.7A, dI/dt=100A/µs 33.5 40 22 26 ns nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=17.7A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4F800 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) 60 60 10V 50 40 VDS=5V 40 30 ID(A) ID (A) 50 4.5V 3.5V 3.0V 20 125°C 30 20 10 25°C 10 VGS=2.5V 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 7.5 Normalized On-Resistance 1.6 7.0 RDS(ON) (mΩ) 2 VGS=4.5V 6.5 6.0 5.5 VGS=10V 5.0 4.5 ID=17.7A 1.4 VGS=4.5V VGS=10V 1.2 1 0.8 0 10 20 30 40 50 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1.0E+02 1.0E+01 1.0E+00 ID=17.7A IS (A) RDS(ON) (mΩ) 12 125°C 8 125°C 25°C 1.0E-02 1.0E-03 25°C 4 1.0E-01 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4F800 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) 8000 10 VDS=15V ID=17.7A 6 4 4000 2000 2 0 0 20 40 60 80 100 Ciss 6000 Capacitance (pF) VGS (Volts) 8 Crss 0 120 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 80 1ms 0.1s 1s 10s DC TJ(Max)=150°C TA=25°C 25 30 60 40 20 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 20 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 10ms 10.0 10 15 100 RDS(ON) limited 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 1.0 Coss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000