Power Module 1200V 225A IGBT Module MG12225WB-BN2MM RoHS Features • IGBT3 CHIP(Trench+Field Stop technology) • L ow saturation voltage and positive temperature coefficient • F ree wheeling diodes with fast and soft reverse recovery • Temperature sense included • F ast switching and short tail current Applications • AC motor control • Photovoltaic/Fuel cell • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature Test Conditions Min Typ Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index AC, t=1min 3000 V 250 Torque Module-to-Sink Recommended (M5) 2.5 Torque Module Electrodes Recommended (M6) 3 Weight 5 N·m 5 N·m 350 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 325 A TC=80°C 225 A tp=1ms 450 A 1050 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG12225WB-BN2MM TJ=25°C 1200 V TC=25°C 225 A TC=80°C 160 A tp=1ms 450 A TJ =125°C, t=10ms, VR=0V 9100 A2s 1 152 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 225A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=9mA 5.0 5.8 6.5 V Collector - Emitter IC=225A, VGE=15V, TJ=25°C 1.7 V Saturation Voltage IC=225A, VGE=15V, TJ=125°C 2.0 V IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=1200V, VGE=0V, TJ=25°C 1 mA VCE=1200V, VGE=0V, TJ=125°C 5 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=225A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V IC=225A RG =3.3Ω tf Fall Time VGE=±15V Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 3.3 Ω 2.1 μC 16 nF 0.75 nF TJ=25°C 160 ns TJ=125°C 170 ns TJ=25°C 45 ns TJ=125°C 50 ns TJ=25°C 460 ns TJ=125°C 530 ns ns TJ=25°C 100 TJ=125°C 150 ns TJ=25°C 9 mJ TJ=125°C 13.5 mJ TJ=25°C 22.5 mJ TJ=125°C 33 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 900 Junction-to-Case Thermal Resistance (Per IGBT) A 0.12 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=225A, VGE=0V, TJ =25°C 1.65 IF=225A, VGE=0V, TJ =125°C 1.6 V V IF=225A, VR=600V diF/dt=-3600A/µs TJ=125°C 200 ns 180 A 18 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.2 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG12225WB-BN2MM 2 153 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 225A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 450 375 450 375 300 TJ =25°C IC (A) IC (A) 300 225 TJ =125°C 150 75 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 80 VCE =20V VCE=600V IC=225A VGE=±15V TJ =125°C 70 60 Eon Eoff (mJ) TJ =25°C 300 IC (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 450 375 TJ =125°C 225 150 75 0 0 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 225 TJ =125°C 150 Eon 50 40 Eoff 30 20 75 0 5 10 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 80 70 Eoff 20 Eon 10 MG12225WB-BN2MM 150 24 300 30 75 20 400 40 0 0 12 16 RG˄Ω˅ 500 VCE=600V RG=3.3Ω VGE=±15V TJ =125°C 50 8 4 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) 60 0 225 300 IC˄A˅ 375 200 RG=3.3Ω VGE=±15V TJ =125°C 100 450 0 3 154 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 225A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 450 25 375 20 Erec (mJ) IF (A) 300 225 75 5 TJ =25°C 0 0.4 0.8 15 10 TJ =125°C 150 0 IF=225A VCE=600V TJ =125°C 1.6 1.2 VF˄V˅ 2.0 0 2.4 Figure 9: Transient Thermal Impedance of Diode and IGBT Inverter 0 4 8 12 16 20 RG˄Ω˅ 24 28 32 Figure 10: NTC Characteristics 1 100000 ZthJC (K/W) Diode 0.1 10000 IGBT R 0.01 1000 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 100 0 20 40 80 100 120 140 160 60 TC˄°C˅ Circuit Diagram MG12225WB-BN2MM 4 155 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 225A IGBT Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12225WB-BN2MM MG12225WB-BN2MM 350g Bulk Pack 60 Part Marking System Part Numbering System MG12225 WB - B N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING MG12225WB-BN2MM ASSEMBLY SITE WAFER TYPE LOT NUMBER CIRCUIT TYPE 2x(IGBT+FWD) Space reserved for QR code PACKAGE TYPE 225: 225A MG12225WB-BN2MM 5 156 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14