MG12225WB-BN2MM

Power Module
1200V 225A IGBT Module
MG12225WB-BN2MM
RoHS
Features
• IGBT3 CHIP(Trench+Field
Stop technology)
• L
ow saturation voltage
and positive temperature
coefficient
• F
ree wheeling diodes
with fast and soft reverse
recovery
• Temperature sense
included
• F
ast switching and short
tail current
Applications
• AC motor control
• Photovoltaic/Fuel cell
• Motion/servo control
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
Test Conditions
Min
Typ
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
AC, t=1min
3000
V
250
Torque
Module-to-Sink
Recommended (M5)
2.5
Torque
Module Electrodes
Recommended (M6)
3
Weight
5
N·m
5
N·m
350
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
TJ=25°C
1200
V
±20
V
TC=25°C
325
A
TC=80°C
225
A
tp=1ms
450
A
1050
W
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG12225WB-BN2MM
TJ=25°C
1200
V
TC=25°C
225
A
TC=80°C
160
A
tp=1ms
450
A
TJ =125°C, t=10ms, VR=0V
9100
A2s
1
152
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 225A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=9mA
5.0
5.8
6.5
V
Collector - Emitter
IC=225A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=225A, VGE=15V, TJ=125°C
2.0
V
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1200V, VGE=0V, TJ=25°C
1
mA
VCE=1200V, VGE=0V, TJ=125°C
5
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=225A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=225A
RG =3.3Ω
tf
Fall Time
VGE=±15V
Inductive Load
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
3.3
Ω
2.1
μC
16
nF
0.75
nF
TJ=25°C
160
ns
TJ=125°C
170
ns
TJ=25°C
45
ns
TJ=125°C
50
ns
TJ=25°C
460
ns
TJ=125°C
530
ns
ns
TJ=25°C
100
TJ=125°C
150
ns
TJ=25°C
9
mJ
TJ=125°C
13.5
mJ
TJ=25°C
22.5
mJ
TJ=125°C
33
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
900
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.12
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=225A, VGE=0V, TJ =25°C
1.65
IF=225A, VGE=0V, TJ =125°C
1.6
V
V
IF=225A, VR=600V
diF/dt=-3600A/µs
TJ=125°C
200
ns
180
A
18
mJ
Junction-to-Case Thermal Resistance (Per Diode)
0.2
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG12225WB-BN2MM
2
153
Min
Typ
5
KΩ
3375
K
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 225A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
Figure 2: Typical Output Characteristics
for IGBT Inverter
450
375
450
375
300
TJ =25°C
IC (A)
IC (A)
300
225
TJ =125°C
150
75
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
0
3.5
Figure 3: T
ypical Transfer Characteristics
for IGBT Inverter
80
VCE =20V
VCE=600V
IC=225A
VGE=±15V
TJ =125°C
70
60
Eon Eoff (mJ)
TJ =25°C
300
IC (A)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
450
375
TJ =125°C
225
150
75
0
0
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
225
TJ =125°C
150
Eon
50
40
Eoff
30
20
75
0
5
10
6
7
9
8
VGE˄V˅
10
11
0
12
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
80
70
Eoff
20
Eon
10
MG12225WB-BN2MM
150
24
300
30
75
20
400
40
0
0
12
16
RG˄Ω˅
500
VCE=600V
RG=3.3Ω
VGE=±15V
TJ =125°C
50
8
4
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
IC (A)
Eon Eoff (mJ)
60
0
225
300
IC˄A˅
375
200
RG=3.3Ω
VGE=±15V
TJ =125°C
100
450
0
3
154
0
200
400
600 800 1000 1200 1400
VCE˄V˅
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 225A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
450
25
375
20
Erec (mJ)
IF (A)
300
225
75
5
TJ =25°C
0
0.4
0.8
15
10
TJ =125°C
150
0
IF=225A
VCE=600V
TJ =125°C
1.6
1.2
VF˄V˅
2.0
0
2.4
Figure 9: Transient Thermal Impedance of
Diode and IGBT Inverter
0
4
8
12
16 20
RG˄Ω˅
24
28
32
Figure 10: NTC Characteristics
1
100000
ZthJC (K/W)
Diode
0.1
10000
IGBT
R
0.01
1000
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
100
0
20
40
80 100 120 140 160
60
TC˄°C˅
Circuit Diagram
MG12225WB-BN2MM
4
155
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14
Power Module
1200V 225A IGBT Module
Dimensions-Package WB
The foot pins are in gold / nickel coating
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12225WB-BN2MM
MG12225WB-BN2MM
350g
Bulk Pack
60
Part Marking System
Part Numbering System
MG12225 WB - B N2 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
MG12225WB-BN2MM
ASSEMBLY SITE
WAFER TYPE
LOT NUMBER
CIRCUIT TYPE
2x(IGBT+FWD)
Space
reserved
for QR
code
PACKAGE TYPE
225: 225A
MG12225WB-BN2MM
5
156
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:11/20/14