Power Module 1200V 300A IGBT Module MG12300WB-BN2MM RoHS Features • IGBT3 CHIP(Trench+Field Stop technology) • L ow saturation voltage and positive temperature coefficient • F ree wheeling diodes with fast and soft reverse recovery • Temperature sense included • F ast switching and short tail current Applications • AC motor control • Photovoltaic/Fuel cell • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature Test Conditions Min Typ Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index AC, t=1min 3000 V 210 Torque Module-to-Sink Recommended (M5) 2.5 Torque Module Electrodes Recommended (M6) 3 Weight 5 N·m 5 N·m 350 g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit TJ=25°C 1200 V ±20 V TC=25°C 500 A TC=80°C 300 A tp=1ms 600 A 1400 W IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG12300WB-BN2MM TJ=25°C 1200 V TC=25°C 300 A TC=80°C 180 A tp=1ms 600 A TJ =125°C, t=10ms, VR=0V 17500 A 2s 1 146 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 300A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=12mA 5.0 5.8 6.5 V Collector - Emitter IC=300A, VGE=15V, TJ=25°C 1.7 Saturation Voltage IC=300A, VGE=15V, TJ=125°C 2.0 IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time 1 mA VCE=1200V, VGE=0V, TJ=125°C 5 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=25V, VGE=0V, f =1MHz IC=300A VGE=±15V Inductive Load Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC -400 VCE=600V, IC=300A , VGE=±15V RG =2.4Ω Fall Time V VCE=1200V, VGE=0V, TJ=25°C VCC=600V tf V 2.5 Ω 2.7 μC 21 nF 1.0 nF TJ=25°C 160 ns TJ=125°C 170 ns TJ=25°C 45 ns TJ=125°C 50 ns TJ=25°C 460 ns TJ=125°C 530 ns ns TJ=25°C 100 TJ=125°C 150 ns TJ=25°C 13 mJ TJ=125°C 20 mJ TJ=25°C 25 mJ TJ=125°C 37 mJ tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 1200 Junction-to-Case Thermal Resistance (Per IGBT) A 0.09 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=300A, VGE=0V, TJ =25°C 1.65 V IF=300A, VGE=0V, TJ =125°C 1.6 V IF=300A, VR=600V diF/dt=-4800A/µs TJ=125°C 225 ns 255 A 24 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.16 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG12300WB-BN2MM 2 147 Min Typ 5 KΩ 3375 K ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 300A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 600 500 600 500 400 TJ =25°C IC (A) IC (A) 400 300 TJ =125°C 200 100 0.5 1.0 1.5 2.0 VCE˄V˅ 2.5 3.0 0 3.5 Figure 3: T ypical Transfer Characteristics for IGBT Inverter 120 VCE=600V IC=300A VGE=±15V TJ =125°C VCE =20V 500 100 Eon Eoff (mJ) TJ =25°C 400 IC (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 600 300 TJ =125°C 200 Eon 80 60 40 Eoff 20 100 0 5 6 7 9 8 VGE˄V˅ 10 11 0 12 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 90 80 70 20 24 500 Eoff 400 40 30 Eon 300 RG=2.4Ω VGE=±15V TJ =125°C 200 20 100 10 MG12300WB-BN2MM 12 16 RG˄Ω˅ 600 60 0 0 8 4 700 VCE=600V RG=2.4Ω VGE=±15V TJ =125°C 50 0 Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) TJ =125°C 300 200 100 0 0 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 100 200 300 400 IC˄A˅ 500 0 600 3 148 0 200 400 600 800 1000 1200 1400 VCE˄V˅ ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 300A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: Switching Energy vs. Gate Resistort for Diode Inverter 600 32 IF=300A VCE=600V TJ =125°C 28 500 24 Erec (mJ) IF (A) 400 300 8 100 0 16 12 TJ =125°C 200 20 TJ =25°C 0 0.4 0.8 1.6 1.2 VF˄V˅ 2.0 4 0 2.4 0 4 8 12 16 20 24 RG˄Ω˅ Figure 9: Transient Thermal Impedance of Diode and IGBT Inverter Figure 10: NTC Characteristics 1 100000 ZthJC (K/W) Diode 0.1 10000 IGBT R 0.01 1000 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 100 0 20 40 80 100 120 140 160 60 TC˄°C˅ Circuit Diagram MG12300WB-BN2MM 4 149 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14 Power Module 1200V 300A IGBT Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12300WB-BN2MM MG12300WB-BN2MM 350g Bulk Pack 60 Part Marking System Part Numbering System MG12300 WB - B N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING MG12300WB-BN2MM ASSEMBLY SITE WAFER TYPE LOT NUMBER CIRCUIT TYPE 2x(IGBT+FWD) Space reserved for QR code PACKAGE TYPE 300: 300A MG12300WB-BN2MM 5 150 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:11/20/14