MG06300D-BN4MM

Power Module
600V 300A IGBT Module
MG06300D-BN4MM
RoHS ®
Features
• H
igh short circuit
capability, self limiting
short circuit current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• V
CE(sat) with positive
temperature coefficient
• Low switching losses
• F
ast switching and short
tail current
Applications
Agency Approvals
AGENCY
• H
igh frequency
switching application
AGENCY FILE NUMBER
E71639
• Motion/servo control
• UPS systems
• Medical applications
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
TJ op
Test Conditions
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Min
Typ
-40
-40
AC, t=1min
Max
Unit
175
°C
150
°C
125
°C
3000
V
350
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M6)
2.5
5
N·m
Weight
320
g
Values
Unit
600
V
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
VCES
Collector - Emitter Voltage
TJ=25°C
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
TC=25°C
400
A
TC=70°C
300
A
tp=1ms
600
A
940
W
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
TJ=25°C
600
V
TC=25°C
400
A
TC=70°C
300
A
tp=1ms
600
A
TJ =125°C, t=10ms, VR=0V
8000
A 2s
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG06300D-BN4MM
1
164
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 300A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=4.8mA
4.9
Collector - Emitter
Saturation Voltage
IC=300A, VGE=15V, TJ=25°C
1.45
5.8
6.5
V
IC=300A, VGE=15V, TJ=125°C
1.6
IGBT
VGE(th)
VCE(sat)
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=600V, VGE=0V, TJ=25°C
VCE=600V, VGE=0V, TJ=125°C
VCE=0V,VGE=±15V, TJ=125°C
VCC=300V, IC=300A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
td(on)
tr
Rise Time
td(off)
Turn - off Delay Time
VCC=300V
IC=300A
RG =2.4Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
VGE=±15V
Inductive Load
-400
V
1
mA
5
mA
400
nA
1
Ω
3.2
μC
19
nF
0.57
nF
TJ =25°C
110
ns
TJ =125°C
120
ns
TJ =25°C
50
ns
TJ =125°C
60
ns
TJ =25°C
490
ns
TJ =125°C
520
ns
TJ =25°C
60
ns
TJ =125°C
70
ns
TJ =25°C
2.0
mJ
TJ =125°C
3.1
mJ
TJ =25°C
9
mJ
TJ =125°C
12
mJ
tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V
1500
Junction-to-Case Thermal Resistance (Per IGBT)
RthJC
V
A
0.16
K/W
Diode
VF
Forward Voltage
IF=300A , VGE=0V, TJ =25°C
1.55
IF=300A , VGE=0V, TJ =125°C
1.5
V
IF=300A , VR=300V
diF/dt=-6500A/μs
TJ =125°C
235
A
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
RthJCD
Junction-to-Case Thermal Resistance (Per Diode)
MG06300D-BN4MM
V
24
μC
6.2
mJ
0.32
2
165
K/W
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 300A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: Typical Output characteristics
600
600
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
480
360
TJ =25°C
IC (A)
IC (A)
480
240
360
TJ =125°C
240
TJ =125°C
120
120
0
0
0.8
0.4
1.2 1.6
VCE˄V˅
2.0
0
2.4
Figure 3: Typical Transfer characteristics
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
600
45
VCC=300V
IC=300A
VGE=±15V
TJ =125°C
VCE =20V
480
35
360
240
Eon Eoff (mJ)
IC (A)
TJ =25°C
TJ =125°C
Eon
25
15
Eoff
120
5
0
5
6
7
9
8
VGE˄V˅
10
0
11
Figure 5: Switching Energy vs. Collector Current
30
16
20
600
500
400
15
Eoff
10
300
RG=2.4Ω
VGE=±15V
TJ =125°C
200
Eon
5
100
200
400
0
600
IC˄A˅
MG06300D-BN4MM
12
8
RG˄Ω˅
700
VCC=300V
RG=2.4Ω
VGE=±15V
TJ =125°C
20
0
0
4
Figure 6: R
everse Biased Safe Operating Area
IC (A)
Eon Eoff (mJ)
25
0
3
166
0
100
200
300 400
VCE˄V˅
500 600
700
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 300A IGBT Module
Figure 7: Diode Forward Characteristics
600
10
480
8
IF (A)
Erec (mJ)
TJ =125°C
360
IF (A)
Figure 8: S
witching Energy vs. Gate Resistor
240
120
0
0.4
0.8
1.2
VF˄V˅
1.6
2
0
2.0
4
8
12
16
Figure 10: Transient Thermal Impedance
1
RG=2.4Ω
VCE=300V
TJ =125°C
Diode
ZthJC (K/W)
Erec (mJ)
8
0
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
10
6
4
TJ =25°C
0
IF=300A
VCE=300V
TJ =125°C
6
4
0.1
IGBT
0.01
2
0
0
400
200
0.001
0.001
600
IF (A)
MG06300D-BN4MM
4
167
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 300A IGBT Module
Dimensions-Package D
Circuit Diagram
M6
8.5
30.0
30.5
2.8x0.5
22.0
93.0
6.0
ž6.5
2
28.0
3
28.0
62.0
15.0
6.0
1
4 5
48.0
16.0
7 6
6.0
18
20.0
108.0
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG06300D-BN4MM
MG06300D-BN4MM
320g
Bulk Pack
60
Part Marking System
Part Numbering System
MG06300 D - BN4 MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
06: 600V
CIRCUIT TYPE
2x(IGBT+FWD)
CURRENT RATING
PACKAGE TYPE
MG06300D-BN4MM
LOT NUMBER
300:300A
MG06300D-BN4MM
5
168
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15