Power Module 600V 300A IGBT Module MG06300D-BN4MM RoHS ® Features • H igh short circuit capability, self limiting short circuit current • F ree wheeling diodes with fast and soft reverse recovery • V CE(sat) with positive temperature coefficient • Low switching losses • F ast switching and short tail current Applications Agency Approvals AGENCY • H igh frequency switching application AGENCY FILE NUMBER E71639 • Motion/servo control • UPS systems • Medical applications Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature TJ op Test Conditions Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index Min Typ -40 -40 AC, t=1min Max Unit 175 °C 150 °C 125 °C 3000 V 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 320 g Values Unit 600 V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions VCES Collector - Emitter Voltage TJ=25°C VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V TC=25°C 400 A TC=70°C 300 A tp=1ms 600 A 940 W Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t TJ=25°C 600 V TC=25°C 400 A TC=70°C 300 A tp=1ms 600 A TJ =125°C, t=10ms, VR=0V 8000 A 2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06300D-BN4MM 1 164 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 300A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=4.8mA 4.9 Collector - Emitter Saturation Voltage IC=300A, VGE=15V, TJ=25°C 1.45 5.8 6.5 V IC=300A, VGE=15V, TJ=125°C 1.6 IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=600V, VGE=0V, TJ=25°C VCE=600V, VGE=0V, TJ=125°C VCE=0V,VGE=±15V, TJ=125°C VCC=300V, IC=300A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time td(on) tr Rise Time td(off) Turn - off Delay Time VCC=300V IC=300A RG =2.4Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 V 1 mA 5 mA 400 nA 1 Ω 3.2 μC 19 nF 0.57 nF TJ =25°C 110 ns TJ =125°C 120 ns TJ =25°C 50 ns TJ =125°C 60 ns TJ =25°C 490 ns TJ =125°C 520 ns TJ =25°C 60 ns TJ =125°C 70 ns TJ =25°C 2.0 mJ TJ =125°C 3.1 mJ TJ =25°C 9 mJ TJ =125°C 12 mJ tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V 1500 Junction-to-Case Thermal Resistance (Per IGBT) RthJC V A 0.16 K/W Diode VF Forward Voltage IF=300A , VGE=0V, TJ =25°C 1.55 IF=300A , VGE=0V, TJ =125°C 1.5 V IF=300A , VR=300V diF/dt=-6500A/μs TJ =125°C 235 A IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy RthJCD Junction-to-Case Thermal Resistance (Per Diode) MG06300D-BN4MM V 24 μC 6.2 mJ 0.32 2 165 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 300A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output characteristics 600 600 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 480 360 TJ =25°C IC (A) IC (A) 480 240 360 TJ =125°C 240 TJ =125°C 120 120 0 0 0.8 0.4 1.2 1.6 VCE˄V˅ 2.0 0 2.4 Figure 3: Typical Transfer characteristics 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor 600 45 VCC=300V IC=300A VGE=±15V TJ =125°C VCE =20V 480 35 360 240 Eon Eoff (mJ) IC (A) TJ =25°C TJ =125°C Eon 25 15 Eoff 120 5 0 5 6 7 9 8 VGE˄V˅ 10 0 11 Figure 5: Switching Energy vs. Collector Current 30 16 20 600 500 400 15 Eoff 10 300 RG=2.4Ω VGE=±15V TJ =125°C 200 Eon 5 100 200 400 0 600 IC˄A˅ MG06300D-BN4MM 12 8 RG˄Ω˅ 700 VCC=300V RG=2.4Ω VGE=±15V TJ =125°C 20 0 0 4 Figure 6: R everse Biased Safe Operating Area IC (A) Eon Eoff (mJ) 25 0 3 166 0 100 200 300 400 VCE˄V˅ 500 600 700 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 300A IGBT Module Figure 7: Diode Forward Characteristics 600 10 480 8 IF (A) Erec (mJ) TJ =125°C 360 IF (A) Figure 8: S witching Energy vs. Gate Resistor 240 120 0 0.4 0.8 1.2 VF˄V˅ 1.6 2 0 2.0 4 8 12 16 Figure 10: Transient Thermal Impedance 1 RG=2.4Ω VCE=300V TJ =125°C Diode ZthJC (K/W) Erec (mJ) 8 0 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 10 6 4 TJ =25°C 0 IF=300A VCE=300V TJ =125°C 6 4 0.1 IGBT 0.01 2 0 0 400 200 0.001 0.001 600 IF (A) MG06300D-BN4MM 4 167 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 300A IGBT Module Dimensions-Package D Circuit Diagram M6 8.5 30.0 30.5 2.8x0.5 22.0 93.0 6.0 6.5 2 28.0 3 28.0 62.0 15.0 6.0 1 4 5 48.0 16.0 7 6 6.0 18 20.0 108.0 Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06300D-BN4MM MG06300D-BN4MM 320g Bulk Pack 60 Part Marking System Part Numbering System MG06300 D - BN4 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE MG06300D-BN4MM LOT NUMBER 300:300A MG06300D-BN4MM 5 168 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15