Power Module 1700V 100A IGBT Module MG17100S-BN4MM RoHS ® Features • IGBT3 CHIP(1700V Trench+Field Stop technology) • D IODE CHIP(1700V EMCON 3 technology) • F ree wheeling diodes with fast and soft reverse recovery • L ow turn-off losses, short tail current • V CE(sat) with positive temperature coefficient Applications Agency Approvals AGENCY • H igh frequency switching application AGENCY FILE NUMBER • Motion/servo control • UPS systems • Medical applications E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) Max Unit 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index AC, t=1min 4000 V 350 Torque Module-to-Sink Recommended (M6) 3 Torque Module Electrodes Recommended (M5) 2.5 Weight 5 N·m 5 N·m 160 g Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit VCES Collector - Emitter Voltage TJ=25°C 1700 V VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V 150 A TC=80°C 100 A tP=1ms 200 A 620 W TC=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t TJ=25°C 1700 V TC=25°C 150 A TC=80°C 100 A tP=1ms 200 A TJ =125°C, t=10ms, VR=0V 1800 A 2S Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG17100S-BN4MM 1 301 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ 5.2 Max Unit V IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=4.0mA 5.8 6.4 VCE(sat) Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25°C 2.0 2.45 IC=100A, VGE=15V, TJ=125°C 2.4 ICES Collector Leakage Current IGES Gate Leakage Current RGint Intergrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) VCE=1700V, VGE=0V, TJ=25°C 3 mA VCE=1700V, VGE=0V, TJ=125°C 20 mA 400 nA VCE=0V,VGE=±20V, TJ=125°C VCE=900V, IC=100A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCC=900V IC=100A RG =4Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC V V VGE=±15V Inductive Load -400 7.5 Ω 1.2 μC 9 nF 0.29 nF TJ =25°C 370 ns TJ =125°C 400 ns TJ =25°C 40 ns TJ =125°C 50 ns TJ =25°C 650 ns TJ =125°C 800 ns TJ =25°C 180 ns TJ =125°C 300 ns TJ =25°C 22 mJ TJ =125°C 32 mJ TJ =25°C 21.5 mJ TJ =125°C 32.5 mJ tpsc≤10μS , VGE=15V; TJ=125°C,VCC=1000V 400 Junction-to-Case Thermal Resistance (Per IGBT) A 0.20 K/W Diode VF Forward Voltage IF=100A , VGE=0V, TJ =25°C 1.8 IF=100A , VGE=0V, TJ =125°C 1.9 2.2 V V IRRM Max. Reverse Recovery Current IF=100A , VR=900V 165 A Qrr Reverse Recovery Charge diF/dt=-2450A/μs 48.5 μC Erec Reverse Recovery Energy TJ=125°C 27.5 mJ RthJCD MG17100S-BN4MM Junction-to-Case Thermal Resistance (Per Diode) 2 302 0.36 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 200 200 VGE =20V VGE =15V VGE =12V VGE =10V VGE = 9V VGE = 8V VGE =15V 160 Tj =25°C 120 IC (A) IC (A) 160 80 120 Tj =125°C 80 Tj =125°C 40 40 0 0 1.0 2.0 VCE˄V˅ 3.0 0 4.0 Figure 3: Typical Transfer characteristics 0 1.0 100 VCE=900V IC=100A VGE=±15V Tj =125°C VCE =20V 80 160 IC (A) Eon Eoff (mJ) Tj =25°C 80 Tj =125°C 5 6 7 8 9 10 VGE˄V˅ 11 Eoff 80 Eoff 100 50 25 50 40 30 150 20 0 0 20 RG˄Ω˅ 200 Eon 40 10 250 VCE=900V RG=4Ω VGE=±15V Tj =125°C 60 0 Figure 6: Reverse Biased Safe Operating Area IC (A) 100 Eon Eoff (mJ) 40 0 12 13 Figure 5: Switching Energy vs. Collector Current MG17100S-BN4MM Eon 60 20 40 0 5.0 4.0 Figure 4: Switching Energy vs. Gate Resistor 200 120 3.0 2.0 VCE˄V˅ 0 75 100 125 150 175 200 IC˄A˅ 3 303 RG=4Ω VGE=±15V Tj =125°C 0 200 600 1000 VCE˄V˅ 1400 1800 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Figure 7: Diode Forward Characteristics Figure 8: S witching Energy vs. Gate Resistor 45 160 35 Erec (mJ) 200 IF (A) 120 80 IF=100A VCE=900V Tj =125°C 25 15 Tj =125°C 40 5 Tj =25°C 0 0 1.0 0.5 2.0 1.5 VF˄V˅ 0 2.5 3.0 16 24 32 40 Figure 10: Transient Thermal Impedance of Diode and IGBT 40 1 RG=4Ω VCE=900V Tj =125°C Diode ZthJC (K/W) Erec (mJ) 8 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 30 0 20 0.1 IGBT 0.01 10 0 0 MG17100S-BN4MM 40 80 120 IF (A) 160 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 200 4 304 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 1700V 100A IGBT Module Dimensions-Package S Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q MG17100S-BN4MM MG17100S-BN4MM 160g Bulk Pack 50 Part Marking System Part Numbering System MG17100 S - B N4 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MG17100S-BN4MM WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 17: 1700V CIRCUIT TYPE CURRENT RATING PACKAGE TYPE LOT NUMBER Space reserved for QR code 100: 100A MG17100S-BN4MM 5 305 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15