2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ RӨJA Thermal Resistance, junction to Ambient 357 ℃/mW Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1mA 30 hFE(2) VCE=-1V,IC=-1mA 60 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-150mA 100 hFE(5) VCE=-2V,IC=-500mA 20 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V VBE(sat)1 IC=-150mA,IB=-15mA -0.95 V VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V Transition frequency fT Collector capacitance Cob VCE=-10V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=100KHz -0.75 200 MHz 8.5 pF 15 nS Delay time td Rise time tr VCC=-30V, IC=-150mA 20 nS Storage time tS IB1=- IB2=-15mA 225 nS Fall time tf 30 nS 2N4403(NPN) TO-92 Bipolar Transistors Typical Characteristics