3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value Units 700 V 400 V 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features 4.32 5.33 3.43 MIN 2.41 2.67 3.18 4.19 2.03 2.67 2.03 2.67 1.14 1.40 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A Collector-emitter saturation voltage Base-emitter saturation voltage 20 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V VBE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT VCE=10V,IC=100mA, f =1MHz Fall time tf IC=1A Storage time ts IB1=-IB2=0.2A CLASSIFICATION OF 40 4 MHz 0.7 µs 4 µs hFE Rank Range 20-25 25-30 30-35 35-40 3DD13003B(NPN) TO-92 Bipolar Transistors Typical Characteristics