3DK2222A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. BASE Features 2.92 MIN Epitaxial planar die construction MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 4.32 5.33 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane 1.25MAX 3. COLLECTOR 3.43 MIN 2.41 2.67 3.18 4.19 2.03 2.67 2.03 2.67 1.14 1.40 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions MIN MAX UNIT IC= 10uA , IE=0 75 V IC= 10mA , IB=0 40 V IE= 10uA, IC=0 6 V Collector cut-off current ICBO VCB= 60 V , IE=0 10 nA Collector cut-off current ICEX VCE= 60 V , VEB(OFF)=3V 10 nA Emitter cut-off current IEBO VEB= 3 V , 10 nA hFE(1) VCE=10 V, IC= 150mA 100 hFE(2) VCE=10 V, IC= 0.1mA 40 hFE(3) VCE=10 V, IC= 500mA 42 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage * Symbol IC=0 VCE(sat)(1) IC= 500mA, IB= 50mA 0.6 V VCE(sat)(2) IC= 150mA, IB= 15mA 0.3 V VBE(sat) IC= 500mA, IB= 50mA 1.2 V VCC=30V, IC=150mA VBE(off)=-0.5V,IB1=15mA 10 ns Delay time td Rise time tr Storage time tS Fall time tf VCC=30V, IC=150mA IB1=- IB2= 15mA Transition frequency fT VCE=20 V, IC=20mA,f =100MHz 25 225 60 300 pulse test CLASSIFICATION OF hFE(1) Rank Range 300 L H 100-200 200-300 MHz 3DK2222A(NPN) TO-92 Bipolar Transistors Typical characteristics 3DK2222A(NPN) TO-92 Bipolar Transistors