3DD13001(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 1.25MAX 3. EMITTER 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units 600 V Collector -Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC 400 V 7 V Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features 4.32 5.33 3.43 MIN 2.41 2.67 3.18 4.19 2.03 2.67 1.14 1.40 2.03 2.67 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V Collector cut-off current ICBO VCB= 600V , IE=0 100 μA Collector cut-off current ICEO VCE= 400V, IB=0 200 μA Emitter cut-off current IEBO VEB= 100 μA hFE(1) VCE= 20V, IC= 20mA 10 hFE(2) VCE= 10V, IC= 0.25 mA 5 7V, IC=0 40 DC current gain Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Transition frequency fT Fall time tf Storage time tS VCE= 20V, IC=20mA f = 1MHz 8 MHz VCC=45V, IC=50mA IB1= -IB2=5mA 0.3 μs 1.5 μs CLASSIFICATION OF hFE(1) Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40 3DD13001(NPN) TO-92 Bipolar Transistors Typical Characteristics