RoHS MMBT2907A MMBT2907A TRANSISTOR (PNP) SOT-23 1. BASE 3. COLLECTOR Ｌ ， ． Ｏ Ｃ MARKING:2F MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Ｄ Ｔ 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) Value -60 -60 -5 -0.6 0.225 150 -55 to +150 Units V V V A W ℃ ℃ Ｃ Ｉ Ｎ Ｏ Ｒ Ｔ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V V(BR)EBO IE=-10μA,IC=0 -5 V ICBO VCB=-50V,IE=0 -20 nA ICE0 VCE=-30V,VEB(0ff)=-0.5V -50 nA -10 nA Ｃ Ｅ Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Ｌ Ｅ Emitter cut-off current DC current gain Ｅ Ｗ Ｊ Collector-emitter saturation voltage Base-emitter saturation voltage IEBO VEB=-3V,IC=0 hFE(1) VCE=-10V,IC=-0.1mA 75 hFE(2) VCE=-10V,IC=-1mA 100 hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat) IC=-150mA,IB=-15mA -0.4 V VCE(sat) IC=-500mA,IB=-50mA -1.6 V VBE(sat) IC=-150mA,IB=-15mA -1.3 V VBE(sat) IC=-500mA,IB=-50mA -2.6 V Transition frequency fT Delay time td Rise time tr Storage time tS Fall time V tf VCE=-20V,IC=-50mA,f=100MHz VCC=-30V,IC=-150mA IB1=- 15mA VCC=-6V,IC=-150mA,IB1=-IB2=-15mA WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn 300 200 MHz 10 nS 25 nS 225 nS 60 nS E-mail:[email protected] RoHS MMBT2907A Typical Characteristics MMBT2907A Ｄ Ｔ Ｌ ， ． Ｏ Ｃ Ｃ Ｉ Ｃ Ｅ Ｎ Ｏ Ｒ Ｔ Ｌ Ｅ Ｅ Ｗ Ｊ WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[email protected]