2N3906(PNP)

2N3906(PNP)
TO-92 Bipolar Transistors
1. EMITTER
TO-92
2. BASE
3. COLLECTOR
Features
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3906
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC = -10μA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =-1mA , IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10μA, IC=0
-5
V
Collector cut-off
current
ICBO
VCB= -40 V,IE=0
-0.1
μA
Collector cut-off
current
ICEX
VCE= -30 V,VBE(off)=-3V
-50
nA
IEBO
VEB= -5 V ,
-0.1
μA
hFE1
VCE=-1 V,
IC= -10mA
100
hFE2
VCE=-1 V,
IC= -50mA
60
hFE3
VCE=-1 V,
IC= -100mA
30
Emitter cut-off
current
DC current gain
IC=0
400
Collector-emitter saturation voltage
VCE(sat)
IC= -50mA, IB= -5mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC= -50mA, IB= -5mA
-0.95
V
VCE=-20V, IC= -10mA
250
MHz
Transition frequency
fT
Delay Time
td
VCC=-3V,VBE=-0.5V,
35
ns
Rise Time
tr
IC=-10mA,IB1=-1mA
35
ns
Storage Time
ts
VCC=-3V,Ic=-10mA
225
ns
Fall Time
tf
IB1=IB2=-1mA
75
ns
f = 100MHz
CLASSIFICATION OF hFE1
Rank
Range
O
Y
G
100-200
200-300
300-400
2N3906(PNP)
TO-92 Bipolar Transistors
Typical Characteristics