SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. COLLECTOR Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 50 nA IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC= 50mA 60 hFE(3) VCE=1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Emitter cut-off current DC current gain 400 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz Delay Time td VCC=3V,VBE=-0.5V 35 nS Rise Time tr IC=10mA, IB1=-IB2=1.0mA 35 nS Storage Time ts VCC=3.0V,IC=10mAdc 200 nS Fall Time tf IB1=-IB2=1mA 50 nS CLASSIFICATION OF Rank Range 300 MHz hFE(1) O Y G 100-200 200-300 300-400 Typical Characteristics MMBT3904