2SA1037

2SA1037
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
—
Excellent hFE linearity.
—
Complments the 2SC2412
MARKING : FQ, FR, FS
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
Collector-emitter saturation voltage
fT
Transition frequency
Collector output capacitance
CLASSIFICATION OF
Rank
Range
VCE(sat)
Cob
120
560
IC=-50mA,IB=-5mA
-0.5
VCE=-12V,IC=-2mA,f=30MHz
140
VCB=-12V,IE=0,f=1MHz
4.0
V
MHz
5.0
hFE
Q
R
S
120 - 270
180 - 390
270 - 560
pF
2SA1037
SOT-23 Transistor(PNP)
Typical Characteristics