SEMIKRON SEMIX151GD12E4S

SEMiX151GD12E4s
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Tc = 25 °C
232
A
Tc = 80 °C
179
A
150
A
ICnom
ICRM
SEMiX® 13
Trench IGBT Modules
ICRM = 3xICnom
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
189
A
Tc = 80 °C
141
A
150
A
VGES
tpsc
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
Tj
Inverse diode
IF
SEMiX151GD12E4s
Tj = 175 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.8
2.05
V
Tj = 150 °C
2.2
2.4
V
VCE0
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
rCE
Tj = 25 °C
6.7
7.7
mΩ
10.0
10.7
mΩ
5.8
6.5
V
0.1
0.3
mA
IGBT
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
VCE(sat)
IC = 150 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
VCC = 600 V
IC = 150 A
Tj = 150 °C
5
Tj = 25 °C
Tj = 150 °C
9.3
nF
f = 1 MHz
0.58
nF
f = 1 MHz
0.51
nF
850
nC
Tj = 150 °C
Ω
209
ns
39
ns
Tj = 150 °C
14.1
mJ
483
ns
82
ns
Eoff
Rth(j-c)
per IGBT
tf
5.00
Tj = 150 °C
RG on = 1 Ω
Tj = 150 °C
RG off = 1 Ω
di/dton = 3900 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs Tj = 150 °C
td(off)
mA
f = 1 MHz
19.2
mJ
0.19
K/W
GD
© by SEMIKRON
Rev. 2 – 17.07.2009
1
SEMiX151GD12E4s
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 150 A
VGE = 0 V
chip
VF0
rF
SEMiX® 13
IRRM
Qrr
Trench IGBT Modules
Err
Rth(j-c)
min.
Tj = 25 °C
Tj = 150 °C
typ.
max.
Unit
2.1
2.46
V
2.1
2.4
V
Tj = 25 °C
1.1
1.3
1.5
V
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
4.3
5.6
6.4
mΩ
7.8
8.5
mΩ
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
6.7
185
A
23
µC
8.9
mJ
0.31
K/W
Module
SEMiX151GD12E4s
LCE
RCC'+EE'
Features
res., terminal-chip
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Rth(c-s)
per module
Ms
to heat sink (M5)
0.04
Typical Applications
Temperatur Sensor
• AC inverter drives
• UPS
• Electronic Welding
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
350
g
493 ± 5%
Ω
3550
±2%
K
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
GD
2
Rev. 2 – 17.07.2009
© by SEMIKRON
SEMiX151GD12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 17.07.2009
3
SEMiX151GD12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 17.07.2009
© by SEMIKRON
SEMiX151GD12E4s
SEMiX 13
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 2 – 17.07.2009
5