FDB075N15A MOSFET Bare Die

N-Channel Power Trench® Mosfet Chip
FDB075N15A
150V, 130A, 7.5mΩ1
Part
V(BR)DSS
FDB075N15A
150V
IDn
RDS(on) Typ
130A
5.5mΩ
1
Die Size
4.4 x 6.1 mm
2
See page 2 for ordering part numbers & supply formats
Features
Applications
•
High density DC / DC Converters
•
Low RDS (on) per mm2
•
Motor Drives
•
Low Gate Charge
•
Avalanche Rated
Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
150
V
±20
V
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
TJ, TSTG
EAS
2
3
Continuous (TC = 25°C)
130
Continuous (TC = 100°C)
92
Pulsed
522
Operation Junction & Storage Temperature
Single Pulsed Avalanche Energy
4
A
IAS=64A,VDD= 100V,L=0.24mHΩ, Starting @ TJ=25°C
-55 to 175
°C
502
mJ
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
150
-
-
V
VGS(th)
Gate threshold Voltage
VGS = VDS, ID =250µA
2.0
3.0
4.0
V
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
-
-
1
µA
IDSS
Zero Gate Voltage Drain Current
175°C
-
-
1
mA
IGSS
Gate to Body Leakage Current
VGS = ±20V , VDS = 0V
-
-
±100
nA
RDS(on)
Static Drain to Source On Resistance
1
VGS = 10V, ID = 80A
-
5.5
7.5
mΩ
RDS(on)
Static Drain to Source On Resistance
1
VGS = 10V, ID = 80A , 175°C
-
14.2
20
mΩ
1.
2.
3.
Notes:
Defined by chip design, not subject to 100% production test at wafer level
Performance will vary based on assembly technique, substrate choice. Current limited by bond wire config
Repetitive Rating: Pulse width limited by maximum junction temperature
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page1
Static Characteristics, TJ = 25° unless otherwise noted
Dynamic Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
Min
Typ
Max
Units
-
5595
-
pF
VDS =75V, VGS = 0V
f = 1MHz
-
513
-
pF
-
16
-
pF
Rg
Gate Resistance
f = 1MHz
-
2.4
-
Ω
Qg(tot)
Total Gate Charge at 10V
VGS = 0V to 10V
-
78
-
nC
Qg(th)
Threshold Gate Charge
VGS = 0V to 2V
-
11
-
nC
Qgs
Gate to Source Gate Charge
VDD =75V, ID = 80A
-
26.5
-
nC
Qgd
Gate to Drain “Miller” Charge
-
14
-
nC
Switching Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Test Conditions
VDD =75V, ID= 80A, VGS =10V
RGEN = 6Ω
Min
Typ
Max
Units
-
33
-
ns
-
39
-
ns
-
76
-
ns
-
25
-
ns
Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
VSD
Source to Drain Forward Voltage
ISD = 80A, VGS = 0V
-
-
1.25
VSD
Source to Drain Forward Voltage
ISD = 40A, VGS = 0V
-
-
1.2
V
trr
Reverse Recovery Time
-
104
-
ns
Qrr
Reverse Recovery Charge
IF = 80A, dISD/dt = 100A/µs
VDD = 120V
-
341
-
nC
4.
5.
Units
V
Notes:
Characterised by design & tested at component level, not subject to production test at wafer level
Essentially independent of Operating Temperature Typical Characteristics
Ordering Guide
Part Number
Format
Detail / Drawing
FDB075N15AMW
Un-sawn wafer, electrical rejects inked
Page 3
FDB075N15AMF
Sawn wafer on film-frame
Page 4
FDB075N15AMD
Singulated die / chips in waffle pack
Page 4
Page2
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Die Drawing
6096
4445
588
385
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
6096 x 4445
µm
Chip Thickness (Nominal)
200
µm
Gate Pad Size
385 x 588
µm
Wafer Diameter
150 (subject to change)
mm
60 (subject to change)
µm
Saw Street
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
4
µm
Backside Metallisation & Thickness
Ti/VNi/Ag
0.3
µm
Topside Passivation
Silicon Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Recommended Wire Bond - Gate
Al 125µm X1
Recommended Wire Bond – Source
Al 500µm X3
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page3
Wafer orientation on frame
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 6.53mm ±0.13mm pocket size
Y = 6.53mm ±0.13mm pocket size
Z = 0.81mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 5 X 5 (25)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page4
1. Life support devices or systems are devices or systems which,
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